Transcript
AON4807 30V Dual P-Channel MOSFET
General Description
Product Summary
The AON4807 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
ID (at VGS=-10V)
-30V -4A
RDS(ON) (at VGS=-10V)
< 68mΩ
RDS(ON) (at VGS =-4.5V)
< 105mΩ
Top View
DFN 3x2A Bottom View
VDS
S1 G1 S2 G2
1
8
2
7
D1 D1
3
6
D2
4
5
D2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 1: July 2012
Steady-State Steady-State
±20
V A
1.9
W
1.2
TJ, TSTG
Symbol t ≤ 10s
Units V
-18
PD
TA=70°C
Maximum -30
-3
IDM TA=25°C
S2
-4
ID
TA=70°C
Pulsed Drain Current C Power Dissipation B
G2
G1
Pin 1
Continuous Drain Current
D2
D1 Top View
RθJA RθJL
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-55 to 150
Typ 51.5 82 37
°C
Max 65 100 50
Units °C/W °C/W °C/W
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AON4807
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30 -1 TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=-250µA
-1.3
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-18
nA
-2.3
V
54
68
76
95
VGS=-4.5V, ID=-3A
80
105
8
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-4A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-1.8
VGS=-10V, ID=-4A
Coss
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
A
-0.78
mΩ mΩ S
-1
V
-2.5
A
290
pF
60
pF
40
pF
16
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
5.8
10
nC
Qg(4.5V) Total Gate Charge
2.8
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=-10V, VDS=-15V, ID=-4A
VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω
1.1
nC
1.3
nC
6
ns
5
ns
21
ns
tf
Turn-Off Fall Time
9
ns
trr
Body Diode Reverse Recovery Time
IF=-4A, dI/dt=100A/µs
10
Qrr
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
20
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: July 2012
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AON4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20
10
-10V
VDS=-5V
-6V 8
-4.5V
15
-ID(A)
-ID (A)
6 -4V
10
4
125°C
-3.5V 5
2
25°C
VGS=-3V 0
0 0
1
2
3
4
0
5
110
2
3
4
5
1.6 Normalized On-Resistance
100 VGS=-4.5V
90 RDS(ON) (mΩ Ω)
1
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
80 70 60 50
VGS=-10V ID=-4A
1.4
17 5 VGS=-4.5V 2 ID=-3A 10
1.2
1
VGS=-10V 0.8
40 0
0
2
4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
220
1.0E+01 ID=-4A 1.0E+00
40
1.0E-01
140
-IS (A)
RDS(ON) (mΩ Ω)
180
125°C
125°C
1.0E-02
100 1.0E-03
25°C
60 25°C
1.0E-04
20
0.0 2
6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 1: July 2012
0.2
0.4
0.6
0.8
1.0
1.2
4
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-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AON4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
400 VDS=-15V ID=-4A
350 Ciss
8 Capacitance (pF)
-VGS (Volts)
300 6
4
250 200 150
Coss
100 2 50 0
Crss
0 0
1
2
3
4
5
6
0
Qg (nC) Figure 7: Gate-Charge Characteristics
5
10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25°C
RDS(ON) limited
100µs
1.0
1ms 10ms 0.1
TJ(Max)=150°C TA=25°C
Power (W)
ID (Amps)
1000
10µs
10.0
100
10
10s DC 1
0.0
0.00001 0.01
0.1
1 VDS (Volts)
10
0.001
0.1
10
1000
100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
0.1 PD
Single Pulse
0.01
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: July 2012
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AON4807
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev 1: July 2012
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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