Aon7405 30v P-channel Mosfet General Description Product Summary

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AON7405 30V P-Channel MOSFET General Description Product Summary The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. ID (at VGS= -10V) -30V -50A RDS(ON) (at VGS= -10V) < 6.2mΩ RDS(ON) (at VGS = -6V) < 8.9mΩ VDS • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested D Top View DFN 3.3x3.3 EP Top View Bottom Pin 1 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current V -39 A -25 IDSM TA=70°C ±25 -210 IDM TA=25°C Units V -50 ID TC=100°C C Maximum -30 A -20 Avalanche Current C IAR, IAS -44 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR, EAS 97 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.2. 0: May 2013 6.25 Steady-State Steady-State RθJA RθJC www.aosmd.com W 4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -210 µA ±100 nA -2.8 V 5.1 6.2 7.6 9.2 VGS=-6V, ID=-20A 7.1 8.9 VGS=-4.5V, ID=-10A 10.7 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Units -2.2 VGS=-10V, ID=-20A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ Maximum Body-Diode Continuous Current A G DYNAMIC PARAMETERS Ciss Input Capacitance mΩ mΩ 46 -0.7 mΩ S -1 V -50 A 1960 2450 2940 pF 380 550 720 pF 220 370 520 pF 7 14 28 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 33 42 51 nC Qg(4.5V) Total Gate Charge 16 21 26 nC 5.5 7 8.5 nC 12 17 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-20A 7 VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω 9.5 ns 10 ns 104 ns 78 ns trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 20 25 30 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 37 47 57 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0 : May 2013 www.aosmd.com Page 2 of 6 AON7405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 120 80 100 80 -6V,-8V,-10V -ID(A) -ID (A) VDS=-5V -5V 100 60 -4V 40 60 40 25°C 125°C 20 VGS=-3.5V 20 0 0 1 2 3 4 0 5 1 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 5 6 Normalized On-Resistance 1.8 8 RDS(ON) (mΩ Ω) 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 9 7 VGS=-6V 6 5 VGS=-10V 4 3 VGS=-10V ID=-20A 1.6 1.4 17 VGS=-6V 5 ID=-20A 1.2 2 10 1 0.8 0 5 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 21 ID=-20A 1.0E+01 17 40 1.0E+00 13 -IS (A) RDS(ON) (mΩ Ω) 2 125° 125°C 1.0E-01 25° 1.0E-02 9 1.0E-03 5 1.0E-04 25° 1.0E-05 1 0.0 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0 : May 2013 0.2 0.4 0.6 0.8 1.0 10 www.aosmd.com -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 VDS=-15V ID=-20A 8 3500 Capacitance (pF) -VGS (Volts) 3000 6 4 Ciss 2500 2000 1500 1000 Coss 2 500 0 Crss 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 400 1000.0 350 10µs RDS(ON) 10.0 10µs 100µs 1ms DC 1.0 0.1 300 TJ(Max)=150°C TC=25°C 250 17 5 2 10 200 150 100 TJ(Max)=150°C TC=25°C 0.0 0.01 Power (W) -ID (Amps) 100.0 50 0.1 1 10 0 0.0001 100 -VDS (Volts) Zθ JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0 : May 2013 www.aosmd.com Page 4 of 6 AON7405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 80 Power Dissipation (W) -IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C 100 TA=150°C TA=125°C 70 60 50 40 30 20 10 0 10 1 10 100 0 1000 25 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 125 150 10000 60 TA=25°C 50 1000 40 Power (W) -Current rating ID(A) 100 TCASE (° °C) Figure 13: Power De-rating (Note F) 30 20 17 5 2 10 100 10 10 0 0 25 50 75 100 125 150 1 0.00001 TCASE (° °C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 0.001 10 0 0.1 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 40 RθJA=55°C/W 0.1 0.01 PD 0.001 0.0001 0.0001 Single Pulse 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0 : May 2013 www.aosmd.com Page 5 of 6 AON7405 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.2.0 : May 2013 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6