Transcript
AON7810 30V
General Description
Dual N-Channel AlphaMOS
Product Summary VDS
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
30V 6A
ID (at VGS=10V)
Application
RDS(ON) (at VGS=10V)
< 14mΩ
RDS(ON) (at VGS=4.5V)
< 20.5mΩ
100% UIS Tested 100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial
DFN 3x3_Dual Bottom View
Top View
D1
D2
Top View D1
G1
D1 S2
D2
G2
D2
S1
G1
G2
Pin 1 S1
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TC=25°C
Continuous Drain Current G Pulsed Drain Current C
Avalanche Current
C
±20
V A
24 6
IDSM
TA=70°C
Units V
5
IDM TA=25°C
Continuous Drain Current
Maximum 30 6
ID
TC=100°C
S2
A
5
IAS
20
A
Avalanche energy L=0.05mH C
EAS
10
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns TC=25°C
PD
TC=100°C TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev0: Aug 2012
3.1
Steady-State Steady-State
RθJA RθJC
W
2
TJ, TSTG
Symbol t ≤ 10s
W
8
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
20.5
°C
-55 to 150
Typ 30 60 5
www.aosmd.com
Max 40 75 6
Units °C/W °C/W °C/W
Page 1 of 6
AON7810
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
30 TJ=125°C
TJ=125°C VGS=4.5V, ID=5A
gFS
Forward Transconductance
VDS=5V, ID=6A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS Ciss Input Capacitance Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs
Gate Source Charge
Qgd tD(on)
VGS=10V, VDS=15V, ID=6A
µA
5 1.3
1
Units V
1
VGS=10V, ID=6A
Output Capacitance
Max
VDS=30V, VGS=0V
IDSS
Coss
Typ
1.8
±100
nA
2.3
V
11.5
14
15.8
19
16
20.5
mΩ
1
V
6
A
25 0.73
mΩ
S
542
pF
233
pF
31
pF
2
3
Ω
9
12.2
nC
4.3
5.8
nC
1.6
nC
Gate Drain Charge
2
nC
Turn-On DelayTime
4
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
3.5
ns
18
ns
tf
Turn-Off Fall Time
3.5
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=6A, dI/dt=500A/µs
8.5
Body Diode Reverse Recovery Charge IF=6A, dI/dt=500A/µs
9.0
ns nC
VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Aug 2012
www.aosmd.com
Page 2 of 6
AON7810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50
50 10V
VDS=5V
4.5V
40
4V
6V
40
30 ID (A)
30 ID(A)
3.5V
125°C
20
20
10
10
25°C
VGS=3V 0
0 0
1
2
3
4
0
5
20
2
3
4
5
6
1.6 Normalized On-Resistance
VGS=4.5V
18 16 RDS(ON) (mΩ Ω)
1
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
14 12 10
VGS=10V
8
VGS=10V ID=6A
1.4
1.2
VGS=4.5V ID=5A
1
0.8
6 0
3
0
6
9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
25
1.0E+01 ID=6A 1.0E+00 1.0E-01
125°C IS (A)
RDS(ON) (mΩ Ω)
20
15
125°C
1.0E-02 1.0E-03
10
25°C
25°C 1.0E-04 1.0E-05
5 2
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev0: Aug 2012
4
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
800 VDS=15V ID=6A
8
Ciss
Capacitance (pF)
VGS (Volts)
600 6
4
400 Coss 200
2
0 0
2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics
10
0
10µs
RDS(ON) limited
30
TJ(Max)=150°C TC=25°C
100µs 1ms 10ms
DC
1.0
0.1
10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
10µs
Power (W)
10.0
5
150
100.0
ID (Amps)
Crss
0
100
50
TJ(Max)=150°C TC=25°C
0.0
0 0.01
0.1
1 VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6°C/W
1
PD
0.1 Single Pulse
Ton T
0.01 1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Aug 2012
www.aosmd.com
Page 4 of 6
AON7810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
25
8 Current rating ID(A)
Power Dissipation (W)
30
20 15 10
6
4
2
5 0
0 0
25
50
75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F)
150
0
25
50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F)
150
10000 TA=25°C
Power (W)
1000
100
10
1 1E-05
0.001
0.1
10
1000
Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1 PD
0.01 Single Pulse
Ton T
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: Aug 2012
www.aosmd.com
Page 5 of 6
AON7810
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev0: Aug 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6
