Transcript
AON7820 20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AON7820 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RSS(ON). This device is ideal for load switch and battery protection applications.
IS (at VGS=4.5V)
DFN 3x3 EP Bottom View
Top View
VDS
20V 35A
RSS(ON) (at VGS=4.5V)
< 16mΩ
RSS(ON) (at VGS =3.5V)
< 17mΩ
RSS(ON) (at VGS =2.5V)
< 20mΩ
Typical ESD protection
HBM Class 2
S1
D1 D1
G1 S2
G1
D2
G2
G2
D2 S1
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current
VGS TC=25°C
Pulsed Drain Current C TA=25°C
Power Dissipation B
TC=100°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Rev 0: August 2011
Steady-State Steady-State
A
A
31
W
12.5 3.1
RθJA RθJC
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W
2
TJ, TSTG
Symbol t ≤ 10s
V
9
PDSM
TA=70°C
±12
11
PD
TA=25°C Power Dissipation A
Units V
80
ISSM
TC=25°C
Maximum 20
22
ISM TA=70°C
S2
35
IS
TC=100°C
Continuous Drain Current
D2
D1
Top View
°C
-55 to 150
Typ 30 60 3.2
Max 40 75 4
Units °C/W °C/W °C/W
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AON7820
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
10
µA
0.7
1.0
V
13
16
18.7
23
VGS=3.5V, IS=10A
13.8
17
mΩ
VGS=2.5V, IS=9A
15.6
20
mΩ
65 1
V
35
A
Gate-Body leakage current
VDS=0V, VGS=±10V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
80
VGS=4.5V, IS=11A TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=11A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
A
0.58
mΩ
S
1375
1720
2065
pF
215
312
410
pF
105
177
250
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge Qgs
µA
5
VGS(th)
Crss
Units V
1 TJ=55°C
Static Source-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IGSS
RSS(ON)
Typ
14 VGS=4.5V, VDS=10V, IS=11A
VGS=4.5V, VDS=10V, RL=0.9Ω, RGEN=3Ω
18.2
pF ΚΩ
2.65 22
nC
9.5
nC
7.6
nC
1.65
µs
3.7
µs
5.4
µs µs
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=11A, dI/dt=500A/µs
11
14.5
18
Qrr
Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs
17
21.5
26
10
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: August 2011
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AON7820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80
40
4.5V
2.5V
VDS=5V
3.5V 30 2V
ID(A)
IS (A)
60
40
20 125°C 10
20 VGS=1.5V
25°C 0
0 0
1
2
3
4
0
5
20 Normalized On-Resistance
VGS=2.5V
16
VGS=3.5V
14 12
VGS=4.5V
1.5
2
2.5
VGS=3.5V ID=10A
1.6 VGS=2.5V ID=9A
1.4 1.2
VGS=4.5V ID=11A
1 0.8
10 0
0
5
10 15 20 Is (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
35
1.0E+02 ID=11A
1.0E+01
30
40
125°C
25 125°C 20
IS (A)
1.0E+00 RSS(ON) (mΩ Ω)
1
1.8
18 RSS(ON) (mΩ Ω)
0.5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
1.0E-01 25°C
1.0E-02 1.0E-03
15
1.0E-04
25°C
1.0E-05
10 0
4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: August 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AON7820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000
5 VDS=10V IS=11A
1600 Capacitance (pF)
VGS (Volts)
4
3
2
800 Coss 400
0
0 5
10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics
10.0
Power (W)
1ms 10ms DC TJ(Max)=150°C TC=25°C
0.1
10 15 VDS (Volts) Figure 8: Capacitance Characteristics
20
TJ(Max)=150°C TC=25°C
160
10µs 100µs
1.0
5
200
10µs RDS(ON) limited
Crss 0
25
100.0
IS (Amps)
1200
1
0
Ciss
120 80 40 0
0.0 0.01
0.1
1 VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=4°C/W 1
PD
0.1
Ton
Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: August 2011
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AON7820
35
40
30
35 Current rating IS(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 20 15 10 5
30 25 20 15 10 5
0
0 0
25
50
75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F)
0
150
25
50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F)
150
10000 TA=25°C
Power (W)
1000
100
10
1 0.00001
0.001
0.1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
40
0.1
PD
0.01
Single Pulse Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: August 2011
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AON7820
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 0: August 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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