Aot10b65m1/aob10b65m1 650v, 10a Alpha Igbt With Soft And Fast Recovery Anti-parallel Diode

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AOT10B65M1/AOB10B65M1 650V, 10A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 10A VCE(sat) (TJ=25°C) 1.6V Applications • Motor Drives • Sewing Machines • Home Appliances • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-263 D2PAK C TO-220 G C C E E AOT10B65M1 Orderable Part Number G G E AOB10B65M1 Package Type Form Minimum Order Quantity AOT10B65M1 TO220 Tube 1000 TO263 Tape & Reel 800 AOB10B65M1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT10B65M1/AOB10B65M1 Collector-Emitter Voltage V CE 650 Gate-Emitter Voltage V GE ±30 Units V V Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 30 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 30 A Continuous Diode Forward Current TC=25°C TC=100°C IF 20 10 20 10 A A Diode Pulsed Current, Limited by TJmax I FM 30 A Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤175°C t SC 5 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range PD T J , T STG 150 75 -55 to 175 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 TL Thermal Characteristics Parameter Symbol AOT10B65M1/AOB10B65M1 R θ JA 65 Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case R θ JC 1 Maximum Diode Junction-to-Case R θ JC 3.3 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev.1.0: April 2015 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=10A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=10A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.6 2 TJ=125°C - 1.86 - TJ=175°C - 2.02 - V TJ=25°C - 1.9 2.4 TJ=125°C - 1.96 - TJ=175°C - 1.91 - - 5.1 - V V TJ=25°C - - 10 TJ=125°C - - 100 TJ=175°C - - 1000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=10A - 9 - S - 655 - pF - 68 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 25 - pF Qg Total Gate Charge - 24 - nC Q ge Gate to Emitter Charge - 5.5 - nC Q gc Gate to Collector Charge - 12 - nC I C(SC) Short circuit collector current - 70 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 5.8 - Ω VGE=15V, VCC=520V, IC=10A VGE=15V, VCC=400V, tsc≤5us, TJ≤175°C t D(on) Turn-On DelayTime - 12 - ns tr Turn-On Rise Time - 16 - ns t D(off) Turn-Off Delay Time - 91 - ns tf Turn-Off Fall Time - 14 - ns E on Turn-On Energy - 0.18 - mJ E off Turn-Off Energy - 0.13 - mJ E total t rr Total Switching Energy - 0.31 - mJ Diode Reverse Recovery Time - 263 - Q rr Diode Reverse Recovery Charge TJ=25°C VGE=15V, VCC=400V, IC=10A, RG=30Ω - 0.4 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 3.8 - A t D(on) Turn-On DelayTime - 10 - ns tr Turn-On Rise Time - 17 - ns t D(off) Turn-Off Delay Time - 111 - ns tf Turn-Off Fall Time - 26 - ns E on Turn-On Energy - 0.2 - mJ E off Turn-Off Energy - 0.23 - mJ E total t rr Total Switching Energy - 0.43 - mJ Diode Reverse Recovery Time - 262 - Q rr Diode Reverse Recovery Charge - 0.7 - ns µC I rm Diode Peak Reverse Recovery Current - 5 - A TJ=25°C IF=10A, di/dt=200A/µs, VCC=400V I rm TJ=175°C VGE=15V, VCC=400V, IC=10A, RG=30Ω TJ=175°C IF=10A, di/dt=200A/µs, VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2015 www.aosmd.com Page 2 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 20V 17V 20V 15V 40 40 17V 15V IC (A) IC (A) 13V 30 11V 20 30 13V 20 9V 11V 9V 10 10 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 30 3 4 5 6 7 30 VCE=20V 25 25 20 -40°C 20 175°C IF (A) IC (A) 2 VCE (V) Figure 2: Output Characteristic (Tj=175°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 15 175°C 15 25°C 10 10 25°C -40°C 5 5 0 0 3 6 9 12 15 0 1 VGE (V) Figure 3: Transfer Characteristic 3 4 2.5 IC=20A 4 5 20A 2 3 VSD (V) VCE(sat) (V) 3 VF (V) Figure 4: Diode Characteristic 5 IC=10A 2 2 10A 1.5 5A 1 1 IF=1A IC=5A 0.5 0 0 0 25 75 100 125 150 175 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: April 2015 50 www.aosmd.com 0 25 50 75 100 125 150 175 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=10A 12 Cies Capacitance (pF) 1000 VGE (V) 9 6 Cres 10 3 0 1 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 16 24 32 40 200 10µs 100µs 1 DC 1ms 10ms 0.1 Power Disspation (W) 160 10 120 80 40 0 0.01 1 10 100 25 1000 VCE (V) Figure 9: Forward Bias Safe Operating Area (TC=25°C, VGE=15V) 50 75 100 125 150 175 TCASE (°C) Figure 10: Power Disspation as a Function of Case 30 1E-03 25 1E-04 20 1E-05 ICE(S) (A) Current rating IC (A) 8 VCE (V) Figure 8: Capacitance Characteristic 100 Ic (A) Coes 100 15 1E-06 VCE=520V 10 1E-07 5 1E-08 0 VCE=650V 1E-09 25 50 75 100 125 150 175 TCASE (°C) Figure 11: Current De-rating Rev.1.0: April 2015 0 25 50 75 100 125 150 175 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 Switching Time (ns) 1000 Switching Time (ns) 10000 Td(off) Tf Td(on) Tr 100 10 1 100 10 1 5 8 11 14 17 20 0 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=30Ω) 150 200 250 300 7 Td(off) Tf Td(on) Tr 1000 100 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=10A) 6 5 VGE(TH) (V) Switching Time (ns) 10000 50 100 4 3 10 2 1 1 25 Rev.1.0: April 2015 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=10A, Rg=30Ω) 175 www.aosmd.com 0 25 50 75 100 125 150 175 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.5 1.5 Eoff Eoff 1.2 Switching Energy (mJ) 1.2 SwitchIng Energy (mJ) Eon Eon Etotal 0.9 0.6 0.3 Etotal 0.9 0.6 0.3 0 0 5 8 11 14 17 20 0 IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=30Ω) 50 150 200 250 300 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=10A) 0.6 0.6 Eoff Eoff Eon Eon 0.48 Switching Energy (mJ) 0.48 Switching Energy (mJ) 100 Etotal 0.36 0.24 0.12 Etotal 0.36 0.24 0.12 0 0 25 50 75 100 125 150 175 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=10A, Rg=30Ω) Rev.1.0: April 2015 www.aosmd.com 200 250 300 350 400 450 500 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C, VGE=15V, IC=10A, Rg=30Ω) Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 360 25 175°C 300 20 Trr 25 175°C Irm (A) 15 25°C Qrr 400 10 Trr (ns) Qrr (nC) 240 600 180 15 120 Irm 175°C 20 25°C 5 200 5 175°C 0 0 8 11 14 17 0 20 0 5 IF (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 1000 175°C 8 11 14 17 20 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 360 25 800 S 60 25°C 5 10 25°C 30 300 20 25 175°C Qrr 25°C 400 Trr (ns) 15 Irm (A) Qrr (nC) 240 600 20 25°C Trr 180 15 S 800 30 S 1000 10 120 175°C 200 Irm 5 25°C 0 0 100 60 5 S 25°C 0 200 300 400 500 600 di/dt (A/µs) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=10A) Rev.1.0: April 2015 10 175°C www.aosmd.com 0 100 200 300 400 500 600 di/dt (A/µs) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=10A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: April 2015 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: April 2015 www.aosmd.com Page 9 of 9