Transcript
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET
General Description
Product Summary
The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V)
700V@150℃ 10A
RDS(ON) (at VGS=10V)
< 0.75Ω
100% UIS Tested 100% Rg Tested
For Halogen Free add "L" suffix to part number: AOT10N60L & AOTF10N60L & AOB10N60L Top View TO-220
TO-263 D2PAK
TO-220F
D
D
G
D
AOT10N60
G
S G
AOTF10N60
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted AOT10N60/AOB10N60 Parameter Symbol Drain-Source Voltage VDS 600 Gate-Source Voltage
VGS TC=25°C
Continuous Drain Current Pulsed Drain Current
TC=100°C C
S
G AOB10N60
AOTF10N60
±30
ID
Units V V
10
10*
7.2
7.2*
A
IDM
36
Avalanche Current C
IAR
4.4
A
Repetitive avalanche energy C
EAR
290
mJ
Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC
EAS
580 45 5
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D
TJ, TSTG
dv/dt PD
50
W
2
0.4 -55 to 150
W/ oC °C
300
°C
AOT10N60/AOB10N60 65
AOTF10N60 65
Units °C/W
0.5 0.5
-2.5
°C/W °C/W
Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Rev.8.0: March 2014
250
TL Symbol RθJA RθCS
mJ V/ns
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Page 1 of 6
AOT10N60/AOB10N60/AOTF10N60
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS BVDSS
Drain-Source Breakdown Voltage
BVDSS /∆TJ
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V
V V/ oC
0.65
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5A
gFS
Forward Transconductance
VDS=40V, ID=5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS ISM
±100
µA
4
4.5
nΑ V
0.6
0.75
Ω
1
V
Maximum Body-Diode Continuous Current
10
A
Maximum Body-Diode Pulsed Current
36
A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
700
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=480V, ID=10A
3
15
S
0.73
1100
1320
1600
pF
105
130
160
pF
7.5
9.3
11
pF
3
3.8
6
Ω
31
40
nC
6
10
nC
14.4
20
nC
28
35
ns
66
80
ns
76
95
ns
64
80
ns ns µC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time IF=10A,dI/dt=100A/µs,VDS=100V
290
350
Qrr
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
3.9
4.7
Body Diode Reverse Recovery Time
VGS=10V, VDS=300V, ID=10A, RG=25Ω
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=4.4A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.8.0: March 2014
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AOT10N60/AOB10N60/AOTF10N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20
100 10V
VDS=40V
6.5V
16
-55°C
10 12
ID(A)
ID (A)
6V 125°C
8 1 4
25°C
VGS=5.5V
0
0.1 0
5
10
15
20
25
30
2
4
VDS (Volts) Fig 1: On-Region Characteristics
8
10
3 Normalized On-Resistance
1.4
1.2
RDS(ON) (Ω)
6
VGS(Volts) Figure 2: Transfer Characteristics
1.0
0.8 VGS=10V 0.6
0.4 0
4
8
12
16
20
2.5
VGS=10V ID=5A
2 1.5 1 0.5 0 -100
24
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
-50
0
50
100
150
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.2
40 1.0E+00 125°C IS (A)
BVDSS (Normalized)
1.0E+01 1.1
1
1.0E-01 1.0E-02
25°C
1.0E-03
0.9
1.0E-04 0.8 -100
1.0E-05 -50
0
50
100
150
200
TJ (°C) Figure 5:Break Down vs. Junction Temperature
Rev.8.0: March 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT10N60/AOB10N60/AOTF10N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000
15 VDS=480V ID=10A
12
Ciss
Capacitance (pF)
VGS (Volts)
1000 9
6
Coss 100
10 3
Crss 1
0 0
10
20
30
40
0.1
50
1
10
100
VDS (Volts) Figure 8: Capacitance Characteristics
Qg (nC) Figure 7: Gate-Charge Characteristics 100
100 10µs RDS(ON) limited
1ms 1 10ms
DC 0.1
10
100µs
TJ(Max)=150°C TC=25°C
ID (Amps)
ID (Amps)
10
RDS(ON) limited
1
1ms
TJ(Max)=150°C TC=25°C
0.1
0.01
10µs 100µs 10ms 0.1s 1s
DC
0.01 1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area for AOT10N60/AOB10N60 (Note F)
Figure 10: Maximum Forward Biased Safe Operating Area for AOTF10N60 (Note F)
12
Current rating ID(A)
10 8 6 4 2 0 0
25
50
75
100
125
150
TCASE (°C) Figure 11: Current De-rating (Note B)
Rev.8.0: March 2014
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Page 4 of 6
AOT10N60/AOB10N60/AOTF10N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.5°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton
0.01
T Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT10N60/AOB10N60 (Note F)
ZθJC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01
Ton T
Single Pulse 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF10N60 (Note F)
Rev.8.0: March 2014
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Page 5 of 6
AOT10N60/AOB10N60/AOTF10N60
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ +
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs Ig Charge
Res istive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
+ VDC
90% Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR Id
DUT Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt
Vds + DUT Vgs Vds -
Isd Vgs
Ig
Rev.8.0: March 2014
L
Isd
+ Vdd
trr
dI/dt IRM
Vdd
VDC
-
IF
Vds
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