Transcript
AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET
General Description
Product Summary
The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V)
800V@150℃ 11A
RDS(ON) (at VGS=10V)
< 0.87Ω
100% UIS Tested 100% Rg Tested
For Halogen Free add "L" suffix to part number: AOT11N70L & AOTF11N70L Top View D
TO-220F
TO-220
G
D
G
S G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT11N70 Drain-Source Voltage VDS
700
Gate-Source Voltage
±30
Continuous Drain Current
VGS TC=25°C TC=100°C
AOTF11N70
V
11
ID
Units V
11*
7.2
7.2*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
4
A
Repetitive avalanche energy C
EAR
120
mJ
Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D
EAS dv/dt
240 5
mJ V/ns W
43
271
PD TJ, TSTG
-55 to 150
W/ oC °C
300
°C
0.4
TL Symbol RθJA RθCS
AOT11N70 65
AOTF11N70 65
Units °C/W
0.5 0.46
-2.5
°C/W °C/W
Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Rev 0: March 2010
50.0
2.1
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AOT11N70/AOTF11N70
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
700
Typ
Max
Units
STATIC PARAMETERS BVDSS
Drain-Source Breakdown Voltage
BVDSS /∆TJ
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
800
V
ID=250µA, VGS=0V
0.8
V/ oC
VDS=700V, VGS=0V
1
VDS=560V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.5A
gFS
Forward Transconductance
VDS=40V, ID=5.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS ISM
3.8
4.5
nΑ V
0.72
0.87
Ω
1
V
Maximum Body-Diode Continuous Current
11
A
Maximum Body-Diode Pulsed Current
43
A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
±100
µA
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
17
S
0.72
1430
1793
2150
pF
116
146
190
pF
8.4
10.5
15
pF
VGS=0V, VDS=0V, f=1MHz
1.8
3.6
5.4
Ω
30
37.5
45
nC
VGS=10V, VDS=560V, ID=11A
7.8
10
12
nC
12
15
22
nC
SWITCHING PARAMETERS Qg Total Gate Charge Qgs
3
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time Body Diode Reverse Recovery Time
IF=11A,dI/dt=100A/µs,VDS=100V
320
400
480
Qrr
Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
7.2
9
11
VGS=10V, VDS=350V, ID=11A, RG=25Ω
42
ns
74
ns
103
ns
62
ns ns µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=30mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: March 2010
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AOT11N70/AOTF11N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
20 10V
-55°C
6.5V
VDS=40V
15
125°C
ID(A)
ID (A)
10 6V 10
1 5
VGS=5.5V
25°C
0 0
5
10
15
20
25
0.1
30
2
4
VDS (Volts) Fig 1: On-Region Characteristics 2.0
8
10
Normalized On-Resistance
3
1.5 RDS(ON) (Ω)
6
VGS(Volts) Figure 2: Transfer Characteristics
1.0
VGS=10V
0.5
5
10
15
20
VGS=10V ID=5.5A
2 1.5 1 0.5 0 -100
0.0 0
2.5
25
-50
0
50
100
150
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2
1.0E+02
40
1.0E+00 IS (A)
BVDSS (Normalized)
1.0E+01 1.1
1
125°C
1.0E-01 25°C 1.0E-02
0.9 1.0E-03 0.8 -100
1.0E-04 -50
0
50
100
150
200
TJ (°C) Figure 5:Break Down vs. Junction Temperature
Rev 0: March 2010
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT11N70/AOTF11N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000
15
1000 Capacitance (pF)
12
VGS (Volts)
Ciss
VDS=560V ID=11A
9
6
Coss 100 Crss 10
3
1
0 0
10
20
30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics
100
1
10 VDS (Volts) Figure 8: Capacitance Characteristics
100
100 RDS(ON) limited
100µs 1
1ms DC
0.1
RDS(ON) limited
10
10µs ID (Amps)
10 ID (Amps)
0.1
60
10ms
10µs 100µs
1
1ms 10ms DC
0.1s
0.1
TJ(Max)=150°C TC=25°C
TJ(Max)=150°C TC=25°C
1s
0.01
0.01 1
10
100
1000
10000
1
10
100
1000
10000
VDS (Volts)
VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT11N70 (Note F)
Figure 10: Maximum Forward Biased Safe Operating Area for AOTF11N70 (Note F)
Current rating ID(A)
12
9
6
3
0 0
25
50
75
100
125
150
TCASE (°C) Figure 11: Current De-rating (Note B)
Rev 0: March 2010
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AOT11N70/AOTF11N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.46°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton
0.01
T Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT11N70 (Note F)
ZθJC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01
Ton T
Single Pulse 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF11N70 (Note F)
Rev 0: March 2010
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AOT11N70/AOTF11N70
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
Res istive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
+ VDC
90% Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt
Vds + DUT Vgs Vds -
Isd Vgs
Ig
Rev 0: March 2010
L
Isd
+ VDC
-
IF
trr
dI/dt IRM
Vdd
Vdd Vds
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