Aot15b65m1/aob15b65m1 650v, 15a Alpha Igbt With Soft And Fast Recovery Anti-parallel Diode

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AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 15A VCE(sat) (TJ=25°C) 1.7V Applications • Motor Drives • Sewing Machines • Home Appliances • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-220 TO-263 D2PAK C G C E E G G E AOB15B65M1 AOT15B65M1 Orderable Part Number C Package Type Form Minimum Order Quantity AOT15B65M1 TO220 Tube 1000 AOB15B65M1 TO263 Tape & Reel 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT15B65M1/AOB15B65M1 V CE Collector-Emitter Voltage 650 Gate-Emitter Voltage V GE ±30 Units V V Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 45 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 45 A Continuous Diode Forward Current TC=25°C TC=100°C IF 30 15 30 15 A A Diode Pulsed Current, Limited by TJmax I FM 45 A Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤175°C t SC 5 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range PD T J , T STG 214 107 -55 to 175 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Symbol Parameter AOT15B65M1/AOB15B65M1 R θ JA Maximum Junction-to-Ambient 65 Maximum IGBT Junction-to-Case R θ JC 0.7 Maximum Diode Junction-to-Case R θ JC 1.9 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev.2.0: April 2015 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=15A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=15A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.7 2.15 TJ=125°C - 2.03 - TJ=175°C - 2.22 - V TJ=25°C - 1.77 2.25 TJ=125°C - 1.82 - TJ=175°C - 1.75 - - 5.1 - V V TJ=25°C - - 10 TJ=125°C - - 500 TJ=175°C - - 5000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=15A - 11 - S - 923 - pF - 96 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 33 - pF Qg Total Gate Charge - 32 - nC Q ge Gate to Emitter Charge - 7.8 - nC Q gc Gate to Collector Charge - 15 - nC I C(SC) Short circuit collector current - 90 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 6.7 - Ω VGE=15V, VCC=520V, IC=15A VGE=15V, VCC=400V, tsc≤5us, TJ≤175°C t D(on) Turn-On DelayTime - 15 - ns tr Turn-On Rise Time - 18 - ns t D(off) Turn-Off Delay Time - 94 - ns tf Turn-Off Fall Time - 14 - ns E on Turn-On Energy - 0.29 - mJ E off Turn-Off Energy - 0.2 - mJ E total t rr Total Switching Energy - 0.49 - mJ - 317 - Q rr Diode Reverse Recovery Charge TJ=25°C VGE=15V, VCC=400V, IC=15A, RG=20Ω Diode Reverse Recovery Time - 0.7 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 4.7 - A t D(on) Turn-On DelayTime - 13 - ns tr Turn-On Rise Time - 20 - ns t D(off) Turn-Off Delay Time - 116 - ns tf Turn-Off Fall Time - 28 - ns E on Turn-On Energy - 0.33 - mJ E off Turn-Off Energy - 0.36 - mJ E total t rr Total Switching Energy - 0.69 - mJ Diode Reverse Recovery Time - 509 - Q rr Diode Reverse Recovery Charge - 1.3 - ns µC I rm Diode Peak Reverse Recovery Current - 6 - A TJ=25°C IF=15A, di/dt=200A/µs, VCC=400V I rm TJ=175°C VGE=15V, VCC=400V, IC=15A, RG=20Ω TJ=175°C IF=15A, di/dt=200A/µs, VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: April 2015 www.aosmd.com Page 2 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 75 60 20V 17V 20V 17V 15V 60 48 15V 45 IC (A) IC (A) 13V 11V 30 13V 36 11V 24 9V 9V 15 12 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=175°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 45 45 VCE=20V 36 27 -40°C 27 175°C 25°C IF (A) IC (A) 36 18 18 25°C 175°C 9 9 -40°C 0 0 3 6 9 12 15 0 0.5 VGE (V) Figure 3: Transfer Characteristic 1 1.5 2 2.5 3 VF (V) Figure 4: Diode Characteristic 5 3 4 2.5 30A IC=30A 15A VSD (V) VCE(sat) (V) 2 3 IC=15A 1.5 5A 2 1 1 IF=1A IC=7.5A 0.5 0 0 0 25 75 100 125 150 175 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.2.0: April 2015 50 www.aosmd.com 0 25 50 75 100 125 150 175 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=15A 12 Cies Capacitance (pF) VGE (V) 1000 9 6 3 Coes 100 Cres 10 0 1 0 8 16 24 32 Qg (nC) Figure 7: Gate-Charge Characteristics 40 0 8 16 24 32 40 VCE (V) Figure 8: Capacitance Characteristic 300 Power Disspation (W) 240 180 120 60 0 25 50 75 100 125 150 175 TCASE (°C) Figure 10: Power Disspation as a Function of Case 40 1E-02 1E-03 1E-04 24 ICE(S) (A) Current rating IC (A) 32 16 VCE=650V 1E-05 1E-06 8 VCE=520V 1E-07 0 1E-08 25 50 75 100 125 150 175 TCASE (°C) Figure 11: Current De-rating Rev.2.0: April 2015 0 25 50 75 100 125 150 175 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 Switching Time (ns) 1000 Switching Time (ns) 10000 Td(off) Tf Td(on) Tr 100 10 1 100 10 1 5 10 15 20 25 30 0 120 160 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=15A) 200 0 25 175 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=20Ω) 10000 6 5 VGE(TH) (V) Switching Time (ns) 80 7 Td(off) Tf Td(on) Tr 1000 40 100 4 3 10 2 1 1 25 Rev.2.0: April 2015 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=15A, Rg=20Ω) 175 www.aosmd.com 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2.5 2.5 Eoff Eoff 2 2 Etotal Switching Energy (mJ) SwitchIng Energy (mJ) Eon Eon 1.5 1 0.5 Etotal 1.5 1 0.5 0 0 5 10 15 20 25 30 0 IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=20Ω) 40 120 160 200 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=15A) 1 1 Eoff Eoff Switching Energy (mJ) Eon 0.8 Switching Energy (mJ) 80 Etotal 0.6 0.4 0.2 Eon 0.8 Etotal 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=15A, Rg=20Ω) Rev.2.0: April 2015 www.aosmd.com 200 250 300 350 400 450 500 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C, VGE=15V, IC=15A, Rg=20Ω) Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 40 600 32 480 24 360 40 175°C 175°C 32 Trr 25°C 800 16 5 10 15 20 8 120 0 0 S 8 25°C 25 30 1500 175°C 0 5 IF (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 1200 16 175°C 25°C 0 24 240 Irm 175°C 400 25°C S Qrr Irm (A) 1200 Trr (ns) Qrr (nC) 1600 10 15 20 25 30 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 40 600 32 480 40 175°C 32 25°C 600 16 360 24 25°C 240 16 175°C 175°C 300 25°C 8 120 0 0 25°C 200 300 400 500 600 di/dt (A/µs) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=15A) Rev.2.0: April 2015 8 Irm 0 100 S 24 Qrr Trr (ns) 900 Irm (A) Qrr (nC) Trr www.aosmd.com S 0 100 200 300 400 500 600 di/dt (A/µs) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=15A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.7°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.9°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.2.0: April 2015 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.2.0: April 2015 www.aosmd.com Page 9 of 9