Transcript
AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET
General Description
Product Summary
The AOT1608L/AOB1608L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.
VDS
60V
ID (at VGS=10V)
140A
RDS(ON) (at VGS=10V)
< 7.6mΩ
100% UIS Tested 100% Rg Tested
TO-263 D2PAK
TO220 Top View
Bottom View
Top View
D
D
Bottom View
D
D
D
G G
D
S S
D
G
S
Continuous Drain Current G
VGS TC=25°C
Pulsed Drain Current C Continuous Drain Current
±20
V A
256 11
IDSM
TA=70°C
Units V
100
IDM TA=25°C
Maximum 60 140
ID
TC=100°C
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
G
G
A
9
Avalanche Current C
IAS, IAR
113
A
Avalanche energy L=0.1mH C TC=25°C
EAS, EAR
638
mJ
Power Dissipation B
TA=25°C Power Dissipation A
Junction and Storage Temperature Range
Rev0: May 2011
2.1
Steady-State Steady-State
RθJA RθJC
W
1.3
TJ, TSTG
Symbol t ≤ 10s
W
166
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
333
PD
TC=100°C
-55 to 175
Typ 12 48 0.35
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°C
Max 15 60 0.45
Units °C/W °C/W °C/W
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AOT1608L/AOB1608L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µΑ
2.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
256
VGS=10V, ID=20A TO220
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VGS=10V, ID=20A TO263 VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
µA
5
IGSS
Units V
1 TJ=55°C
RDS(ON)
Max
60
VDS=60V, VGS=0V
VGS(th)
Coss
Typ
100
nA
3.1
3.7
V
6.6
7.6
11.4
13.2
6.3 51
7.3
mΩ S
0.7
A mΩ
1
V
140
A pF
2450
3069
3690
500
721
945
pF
30
56
80
pF
1.5
2.9
4.4
Ω
54
69
84
nC
VGS=10V, VDS=30V, ID=20A
Qgs
Gate Source Charge
15
nC
Qgd
Gate Drain Charge
21
nC
tD(on)
Turn-On DelayTime
18
ns
tr
Turn-On Rise Time
25
ns
tD(off)
Turn-Off DelayTime
47
ns
tf
Turn-Off Fall Time
11
ns
VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
28
40
52
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
245
355
465
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. Maximum UIS current limited by test equipment. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package is 120A. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: May 2011
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AOT1608L/AOB1608L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100
VDS=5V
10V 80
80 5.5V
60 ID (A)
ID (A)
60 5V 40
20
20
VGS=4.5V
125°C
0
25°C
0 0
1
2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E)
5
0
1
2
3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E)
6
2.4 Normalized On-Resistance
10
8 RDS(ON) (mΩ Ω)
40
VGS=10V 6
4
2
2.2 2.0
VGS=10V ID=20A
1.8
17 5 2 10
1.6 1.4 1.2 1.0 0.8
0
5
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
25
50
75
100
125
150
175
200
0
Temperature (°C) 18 Figure 4: On-Resistance vs. Junction Temperature (Note E)
1E+02
18 ID=20A
1E+01
15
40 125°C
12
IS (A)
RDS(ON) (mΩ Ω)
1E+00
125°C
1E-01 25°C 1E-02
9
1E-03 6 25°C
1E-04
3
1E-05 2
6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev0: May 2011
4
10
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0.0
0.2
0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT1608L/AOB1608L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
7000
Capacitance (pF)
VGS (Volts)
6000
VDS=30V ID=20A
8
6
4
5000 4000 Ciss 3000 2000 Coss
2 1000 Crss 0
0 0
15
30 45 60 Qg (nC) Figure 7: Gate-Charge Characteristics
75
0
1000.0
20 30 VDS (Volts) Figure 8: Capacitance Characteristics
40
9000
10µs
RDS(ON) limited
100µs
DC
10.0
1ms 10ms
1.0
TJ(Max)=175°C TC=25°C
7500
10µs Power (W)
100.0
ID (Amps)
10
6000
17 5 2 10
4500 3000
TJ(Max)=175°C TC=25°C
0.1
1500 0
0.0 0.01
0.1
1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.0001
0.001
0.01 0.1 1 0 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to18 Case (Note F)
10
Zθ JC Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W
40
1
PD
0.1 Single Pulse
Ton
T
0.01 0.00001
Rev0: May 2011
0.0001
0.001
0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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1
10
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AOT1608L/AOB1608L
200
500
160
400
Power Dissipation (W)
IAR (A) Peak Avalanche Current
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TA=25°C
120 TA=150°C
TA=100°C
80 TA=125°C 40
200
100
0
0 1
0
10 100 1000 10000 Time in avalanche, tA (ms) Figure 12: Single Pulse Avalanche capability (Note C)
25
50
75 100 150 125 TCASE (°°C) Figure 13: Power De-rating (Note F)
175
10000
200
TA=25°C
160
1000 Power (W)
Current rating ID(A)
300
120
80
17 5 2 10
100
10
40
0
1 0
25
50
75
100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F)
175
1 100 0 10000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.0001
0.01
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1 PD
0.01
Single Pulse Ton
T
0.001 0.01
Rev0: May 2011
0.1
1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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100
1000
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AOT1608L/AOB1608L
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev0: May 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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