Transcript
AOT2142L/AOTF2142L 40V N-Channel MOSFET
General Description
Product Summary VDS
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications
Applications
ID (at VGS=10V)
40V 120A / 112A
RDS(ON) (at VGS=10V)
< 1.9mΩ
RDS(ON) (at VGS=4.5V)
< 2.5mΩ
100% UIS Tested 100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial
Top View D TO-220
TO-220F
G S AOT2142L
AOTF2142L
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT2142L AOTF2142L
TO-220 TO-220F
Tube Tube
1000 1000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage
Symbol VDS
Gate-Source Voltage Continuous Drain Current
Avalanche Current
C
IDM TA=25°C
Continuous Drain Current C
VDS Spike
L=0.3mH
C
10µs TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Rev.2.0: December 2015
78
480
445 50
IAS
60
A
EAS
540
mJ
48 41
156
20 8.3
TJ, TSTG
Steady-State
RθJA RθJC
-55 to 175
AOT2142L(Max) 15 60 0.48
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W W
5.3
Symbol Steady-State
V
312
PDSM
t ≤ 10s
A
A
40
PD
Junction and Storage Temperature Range
V
120 G
VSPIKE
TA=25°C
Units V
112
IDSM
TA=70°C
Avalanche energy
±20 120 G
ID
TC=100°C
AOTF2142L(Max) 40
VGS TC=25°C
Pulsed Drain Current
AOT2142L(Max)
AOTF2142L(Max) 15 60 3.6
°C
Units °C/W °C/W °C/W
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AOT2142L/AOTF2142L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
±100
nA
2.3
V
1.55
1.9
2.25
2.8
VGS=4.5V, ID=20A
1.95
2.5
VDS=5V, ID=20A
100
gFS
Forward Transconductance
VSD IS
IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G(AOT2142L)
IS
Maximum Body-Diode Continuous Current (AOTF2142L)
1.3 TJ=125°C
0.66
DYNAMIC PARAMETERS Input Capacitance Ciss Reverse Transfer Capacitance Gate resistance
µA
5 1.8
Static Drain-Source On-Resistance
Rg
V
TJ=55°C
RDS(ON)
Crss
Units
1
VGS=10V, ID=20A
Output Capacitance
Max
40
VDS=40V, VGS=0V
IDSS
Coss
Typ
VGS=0V, VDS=20V, f=1MHz
mΩ mΩ S
1
V
120
A
50
A
8320
pF
1438
pF
85 f=1MHz
0.5
1.15
pF 1.8
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
100
nC
Qg(4.5V)
Total Gate Charge
45
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=20V, ID=20A
VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω
25
nC
7
nC
19
ns
7
ns
69
ns
10
ns
IF=20A, dI/dt=400A/µs
26
Body Diode Reverse Recovery Charge IF=20A, dI/dt=400A/µs
83
ns nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: December 2015
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AOT2142L/AOTF2142L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120
3.5V
100
4.5V
80
10V
VDS=5V 100 80 ID(A)
ID (A)
120
60 40
60 125°C
40
25°C
20
20 VGS=3V
0
0 0
1
2
3
4
1
5
1.5
2.5
3
3.5
4
4.5
5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Figure 1: On-Region Characteristics (Note E) 4 Normalized On-Resistance
1.8
3 RDS(ON) (mΩ)
2
VGS=4.5V 2
VGS=10V
1
VGS=10V ID=20A
1.6
1.4
1.2
VGS=4.5V ID=20A
1
0.8
0 0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5
1.0E+02 ID=20A 1.0E+01
4
3
IS (A)
RDS(ON) (mΩ)
1.0E+00 125°C
125°C
1.0E-01 1.0E-02
2
25°C
1.0E-03 25°C
1
1.0E-04 0
1.0E-05 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.2.0: December 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT2142L/AOTF2142L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
10000 VDS=20V ID=20A
Ciss 8000 Capacitance (pF)
VGS (Volts)
8
6
4
2
6000
4000 Coss
2000
0
Crss
0 0
20
40
60
80
100
120
0
Qg (nC) Figure 7: Gate-Charge Characteristics
10
20
30
VDS (Volts) Figure 8: Capacitance Characteristics
1000.0
1000 TJ(Max)=175°C TC=25°C
10µs RDS(ON) limited
10µs 100µs
800
1ms 10ms
10.0
Power (W)
ID (Amps)
100.0
DC 1.0
0.1
40
TJ(Max)=175°C TC=25°C
0.0 0.01
600
400
200
0.1
1 10 VDS (Volts)
100
0 0.0001 0.001
1000
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase for AOT2142L (Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe Operating Area for AOT2142L (Note F)
ZθJC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.48°C/W
1
PDM
0.1 Single Pulse
Ton T
0.01 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2142L (Note F)
Rev.2.0: December 2015
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AOT2142L/AOTF2142L
350
140
300
120
250
100
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200 150 100 50
80 60 40 20
0
0 0
25
50
75
100
125
150
175
0
TCASE (°C) Figure 12: Power De-rating for AOT2142L (Note F)
25
50
75
100
125
150
175
TCASE (°C) Figure 13: Current De-rating for AOT2142L (Note F)
10000 TA=25°C
Power (W)
1000
100
10
1 1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient Thermal Resistance
Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1 PDM
0.01 Ton
Single Pulse
0.001 0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: December 2015
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AOT2142L/AOTF2142L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50
140 120
Current rating ID(A)
Power Dissipation (W)
40
30
20
10
100 80 60 40 20
0
0 0
25
50
75
100
125
150
175
0
TCASE (°C) Figure 16: Power De-rating for AOTF2142L (Note F)
25
50
75
100
RDS(ON) limited
TJ(Max)=175°C TC=25°C
10µs 100µs
800
1ms 10ms
10.0
1.0
Power (W)
ID (Amps)
175
1000
10µs
0.1
150
TCASE (°C) Figure 17: Current De-rating for AOTF2142L (Note F)
1000.0
100.0
125
DC TJ(Max)=175°C TC=25°C
0.0 0.01
0.1
600
400
200
1 10 VDS (Volts)
100
0 0.0001 0.001
1000
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 19: Single Pulse Power Rating Junction-toCase for AOTF2142L (Note F)
VGS> or equal to 4.5V
Figure 18: Maximum Forward Biased Safe Operating Area for AOTF2142L (Note F)
ZθJC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.6°C/W
1
PDM
0.1 Single Pulse
Ton T
0.01 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 20: Normalized Maximum Transient Thermal Impedance for AOTF2142L (Note F)
Rev.2.0: December 2015
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AOT2142L/AOTF2142L
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev.2.0: December 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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