Aot240l/aob240l/aotf240l 40v N-channel Mosfet General Description Product Summary

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AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET General Description Product Summary The AOT240L & AOB240L & AOTF240L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. VDS ID (at VGS=10V) 40V 105A/85A RDS(ON) (at VGS=10V) < 2.9mΩ (< 2.6mΩ∗) RDS(ON) (at VGS=4.5V) < 3.7mΩ (< 3.5mΩ∗) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT240L D S AOTF240L G D S S AOB240L S G Orderable Part Number Package Type Form Minimum Order Quantity AOT240L AOB240L AOTF240L TO-220 TO-263 TO-220F Tube Tape & Reel Tube 1000 800 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT240L/AOB240L Symbol Drain-Source Voltage 40 VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Rev.3.0: November 2013 IAS 68 A EAS 231 mJ 176 41 88 20 1.9 TJ, TSTG Steady-State Steady-State RθJA RθJC -55 to 175 AOT240L/AOB240L 15 65 0.85 www.aosmd.com W W 1.2 Symbol t ≤ 10s A A 16 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 60 20 PD TA=25°C V 400 IDSM TA=70°C Units V 85 82 IDM TA=25°C Continuous Drain Current ±20 105 ID TC=100°C AOTF240L °C AOTF240L 15 65 3.6 Units °C/W °C/W °C/W Page 1 of 7 AOT240L/AOB240L/AOTF240L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 1 TJ=125°C TO220/TO220F VGS=10V, ID=20A Static Drain-Source On-Resistance TO263 VGS=4.5V, ID=20A gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 1.7 2.2 V 2.4 2.9 3.7 4.7 3 3.7 mΩ 2.1 2.6 mΩ 2.7 3.5 mΩ A 78 0.65 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA 400 VGS=4.5V, ID=20A Coss V 5 VGS=10V, ID=20A TO220/TO220F Units 1 TJ=55°C IGSS Max 40 VDS=40V, VGS=0V VGS(th) RDS(ON) Typ S 1 V 105 A 3510 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.5 mΩ pF 1070 pF 68 pF 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 49 72 nC Qg(4.5V) Total Gate Charge 22 32 nC VGS=10V, VDS=20V, ID=20A Qgs Gate Source Charge 9 nC Qgd Gate Drain Charge 7 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time 10 ns tD(off) Turn-Off DelayTime 38 ns tf Turn-Off Fall Time 11 ns ns nC VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 21 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 58 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: November 2013 www.aosmd.com Page 2 of 7 AOT240L/AOB240L/AOTF240L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 3.5V VDS=5V 7V 80 3V 80 10V 60 ID(A) ID (A) 60 125°C 40 40 20 20 25°C Vgs=2.5V 0 0 0 1 2 3 4 1 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 4 Normalized On-Resistance 2 6 RDS(ON) (mΩ Ω) 1.5 VGS=4.5V 4 2 VGS=10V 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 8 1.0E+02 ID=20A 1.0E+01 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 6 4 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 2 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.3.0: November 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT240L/AOB240L/AOTF240L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=20V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 3000 2000 Coss 1000 Crss 0 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 600 1000.0 TJ(Max)=175°C TC=25°C 10µs RDS(ON) limited 10µs 500 100µs 1ms 10ms 10.0 DC 1.0 TJ(Max)=175°C TC=25°C 0.1 Power (W) ID (Amps) 100.0 40 17 5 2 10 400 300 200 0.0 100 0.01 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT240L and AOB240L (Note F) 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT240L and AOB240L (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.85°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT240L and AOB240L (Note F) Rev.3.0: November 2013 www.aosmd.com Page 4 of 7 AOT240L/AOB240L/AOTF240L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 1000.0 10µs RDS(ON) 100.0 TJ(Max)=175°C TC=25°C 500 10.0 1.0 DC TJ(Max)=175°C TC=25°C 0.1 Power (W) ID (Amps) 100µs 1ms 10ms 400 300 200 100 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 10 100 1000 17 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-to-Case 5 for AOTF240L (Note F) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF240L 2 10 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.6°C/W 1 0 18 0.1 PD Single Pulse Ton 0.01 1E-05 T 40 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF240L (Note F) Rev.3.0: November 2013 www.aosmd.com Page 5 of 7 AOT240L/AOB240L/AOTF240L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 10 150 100 50 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 15: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (° °C) Figure 16: Power De-rating (Note F) 175 1000 120 TA=25°C 80 100 Power (W) Current rating ID(A) 100 60 40 17 5 2 10 10 20 0 1 0 25 50 75 100 125 150 TCASE (° °C) Figure 17: Current De-rating (Note F) 175 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 18: Single Pulse Power Rating Junction-toAmbient (Note H) 1E-05 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=65°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 19: Normalized Maximum Transient Thermal Impedance (Note H) Rev.3.0: November 2013 www.aosmd.com Page 6 of 7 AOT240L/AOB240L/AOTF240L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.3.0: November 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7