Aot282l/aob282l 80v N-channel Mosfet General Description Product Summary

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AOT282L/AOB282L 80V N-Channel MOSFET General Description Product Summary The AOT282L & AOB282L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 80V 105A RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ ) RDS(ON) (at VGS=6V) < 5.2mΩ (< 4.9mΩ ∗) 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View ∗ Bottom View Top View D Bottom View D D D D G G D S S D S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State A A IAS 80 A EAS 320 mJ 272.5 W 136 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s V 14.5 PDSM TA=70°C ±20 18.5 PD TC=100°C Units V 420 IDSM TA=70°C Maximum 80 82 IDM TA=25°C Continuous Drain Current S S 105 ID TC=100°C G G -55 to 175 Typ 12 48 0.35 °C Max 15 60 0.55 Units °C/W °C/W °C/W * Surface mount package TO263 Rev 0 : August 2012 www.aosmd.com Page 1 of 6 AOT282L/AOB282L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ Max 80 V VDS=80V, VGS=0V 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.2 ID(ON) On state drain current VGS=10V, VDS=5V 420 Units ±100 nA 2.85 3.5 V 2.9 3.5 4.5 5.5 VGS=6V, ID=20A TO220 3.7 5.2 VGS=10V, ID=20A TO263 2.6 3.2 3.4 60 4.9 Forward Transconductance VGS=6V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V 0.68 IS Maximum Body-Diode Continuous Current G VGS=10V, ID=20A TO220 RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz A S 1 V 105 A 7765 pF 960 pF 66 VGS=0V, VDS=0V, f=1MHz pF Ω 1 1.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 127 178 Qg(4.5V) Total Gate Charge 58 nC VGS=10V, VDS=40V, ID=20A 0.5 mΩ nC Qgs Gate Source Charge 35 nC Qgd Gate Drain Charge 21 nC tD(on) Turn-On DelayTime 24 ns tr Turn-On Rise Time 18 ns tD(off) Turn-Off DelayTime 55 ns tf Turn-Off Fall Time 17 ns ns nC VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 40 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 320 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : August 2012 www.aosmd.com Page 2 of 6 AOT282L/AOB282L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 140 10V VDS=5V 6V 120 120 5V 100 80 ID(A) ID (A) 100 4.5V 60 80 60 125°C 40 40 Vgs=4.0V 20 25°C 20 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 Normalized On-Resistance 2 6 RDS(ON) (mΩ Ω) 3 VGS=6V 4 2 VGS=10V 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=6V 10 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 8 ID=20A 1.0E+01 7 40 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 6 125°C 5 125°C 1.0E-01 1.0E-02 25°C 4 1.0E-03 3 1.0E-04 25°C 2 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : August 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT282L/AOB282L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 9000 VDS=40V ID=20A 8000 Ciss 7000 Capacitance (pF) VGS (Volts) 8 6 4 6000 5000 Coss 4000 3000 2000 2 Crss 1000 0 0 0 20 40 60 80 100 120 Qg (nC) Figure 7: Gate-Charge Characteristics 140 0 20 30 40 50 60 70 VDS (Volts) Figure 8: Capacitance Characteristics 80 600 1000.0 10µs 10µs 100µs RDS(ON) limited 100.0 1ms 10ms 10.0 DC 1.0 TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 500 Power (W) ID (Amps) 10 17 5 2 10 400 300 200 0.0 100 0.01 0.1 1 10 VDS (Volts) 100 1000 0.001 0.01 0.1 1 10 100 0 1000 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.55°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : August 2012 www.aosmd.com Page 4 of 6 AOT282L/AOB282L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C TA=150°C TA=125°C 250 200 150 100 50 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (° °C) Figure 13: Power De-rating (Note F) 175 1000 120 Power (W) Current rating ID(A) TA=25°C 90 60 100 17 5 2 10 10 30 1 0 0.001 0 25 50 75 100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.1 10 175 1000 0 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : August 2012 www.aosmd.com Page 5 of 6 AOT282L/AOB282L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0 : August 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6