Aot284l/aob284l 80v N-channel Mosfet General Description Product Summary

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AOT284L/AOB284L 80V N-Channel MOSFET General Description Product Summary The AOT284L & AOB284L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 80V 105A RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.3mΩ ) RDS(ON) (at VGS=6V) < 5.7mΩ (< 5.5mΩ ∗) 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View ∗ Bottom View Top View D Bottom View D D D D G G D S S D S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State A A IAS 65 A EAS 211 mJ 250 W 125 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s V 16 PDSM TA=70°C ±20 12.5 PD TC=100°C Units V 400 IDSM TA=70°C Maximum 80 82 IDM TA=25°C Continuous Drain Current S S 105 ID TC=100°C G G -55 to 175 Typ 12 48 0.45 °C Max 15 60 0.6 Units °C/W °C/W °C/W * Surface mount package TO263 Rev 0 : Oct. 2012 www.aosmd.com Page 1 of 6 AOT284L/AOB284L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ Max 80 V VDS=80V, VGS=0V 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.3 ID(ON) On state drain current VGS=10V, VDS=5V 400 Units ±100 nA 2.8 3.3 V 3.6 4.5 5.8 7.2 VGS=6V, ID=20A TO220 4.4 5.7 VGS=10V, ID=20A TO263 3.4 4.3 4.2 80 5.5 Forward Transconductance VGS=6V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V 0.69 IS Maximum Body-Diode Continuous Current G VGS=10V, ID=20A TO220 RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz A S 1 V 105 A 5154 pF 673 pF 48 VGS=0V, VDS=0V, f=1MHz pF Ω 0.8 1.2 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 71 100 nC Qg(4.5V) Total Gate Charge 33.5 48 nC VGS=10V, VDS=40V, ID=20A 0.4 mΩ Qgs Gate Source Charge 18.5 nC Qgd Gate Drain Charge 11.5 nC tD(on) Turn-On DelayTime 18 ns tr Turn-On Rise Time 11 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω 38 ns 9 ns IF=20A, dI/dt=500A/µs 38 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 230 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Oct. 2012 www.aosmd.com Page 2 of 6 AOT284L/AOB284L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 5V 80 VDS=5V 80 10V 4.5V 60 ID(A) ID (A) 60 40 40 125°C 20 20 25°C VGS=4.0V 0 0 0 1 2 3 4 1 5 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 Normalized On-Resistance 2.2 6 RDS(ON) (mΩ Ω) 2 VGS=6V 4 VGS=10V 2 2 VGS=10V ID=20A 1.8 17 5 2 VGS=6V 10 1.6 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 10 ID=20A 1.0E+01 8 40 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 125°C 6 1.0E-01 125°C 1.0E-02 4 25°C 1.0E-03 25°C 2 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Oct. 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT284L/AOB284L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=40V ID=20A 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 4000 Coss 3000 2000 1000 0 Crss 0 0 20 40 60 80 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 40 50 60 70 VDS (Volts) Figure 8: Capacitance Characteristics 80 600 1000.0 10µs 10µs RDS(ON) limited 10.0 DC 1.0 500 1ms 10ms TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 TJ(Max)=175°C TC=25°C 100µs Power (W) 100.0 ID (Amps) 10 17 5 2 10 400 300 200 1 10 100 1000 100 0.001 0.01 0.1 1 10 100 1000 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.6°C/W 1 0.1 PD Single Pulse 0.01 1E-05 0.0001 Ton 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Oct. 2012 www.aosmd.com Page 4 of 6 AOT284L/AOB284L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C TA=150°C TA=125°C 250 200 150 100 50 10 0 1 10 100 1000 0 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 175 TCASE (° °C) Figure 13: Power De-rating (Note F) 1000 120 Power (W) Current rating ID(A) TA=25°C 90 60 100 17 5 2 10 10 30 1 0.001 0 0 25 50 75 100 125 150 0.1 10 175 TCASE (° °C) Figure 14: Current De-rating (Note F) 1000 0 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse 0.001 0.01 0.1 1 Ton T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : Oct. 2012 www.aosmd.com Page 5 of 6 AOT284L/AOB284L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0 : Oct. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6