Transcript
AOT290L/AOB290L 100V N-Channel MOSFET
General Description
Product Summary
The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V)
100V 140A
RDS(ON) (at VGS=10V)
< 3.5mΩ
100% UIS Tested 100% Rg Tested
TO220 Top View
Bottom View
∗
(< 3.2mΩ )
Top View
TO-263 D2PAK
D
Bottom View
D D
D
D
G
D
S S
D
G
G S G
AOT290L
VGS
Gate-Source Voltage TC=25°C
Pulsed Drain Current Continuous Drain Current
C
±20
V A
500 18
IDSM
TA=70°C
Units V
110
IDM TA=25°C
Maximum 100 140
ID
TC=100°C
S
S
AOB290L
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G
G
A
15
Avalanche Current C
IAS, IAR
100
A
Avalanche energy L=0.1mH C TC=25°C
EAS, EAR
500
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Rev3 : Sep 2011
2.1
Steady-State Steady-State
RθJA RθJC
W
1.3
TJ, TSTG
Symbol t ≤ 10s
W
250
PDSM
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case * Surface mount package TO263
500
PD
-55 to 175
Typ 12 50 0.25
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°C
Max 15 60 0.3
Units °C/W °C/W °C/W
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AOT290L/AOB290L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Conditions
Min
ID=250µA, VGS=0V
100
Typ
1 TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2.9
ID(ON)
On state drain current
VGS=10V, VDS=5V
500
VGS=10V, ID=20A TJ=125°C
100
nA
3.5
4.1
V
2.7
3.5
4.4
5.7 3.2
A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
TO263 VDS=5V, ID=20A
2.5
gFS VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.67
IS
Maximum Body-Diode Continuous CurrentG
VGS=10V, ID=20A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
µA
5
IGSS
TO220
Units V
VDS=100V, VGS=0V
Zero Gate Voltage Drain Current
Max
50
VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω
S 1
V
140
A
7180
9550
pF
2780
3700
pF
42
72
pF Ω
1.7 90
VGS=10V, VDS=50V, ID=20A
mΩ
126
nC
33
nC
21
nC
31
69
ns
24
53
ns
45
99
ns
tf
Turn-Off Fall Time
27
60
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
65
91
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
460
644
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3 : Sep 2011
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AOT290L/AOB290L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100
10V 8V 6.5V
VDS=5V
80
80
6V
60 ID(A)
ID (A)
60 5.5V
40
125°C 40 25°C 20
20 VGS=5V
0
0 0
1
2
3
4
3
5
8 Normalized On-Resistance
4
2
VGS=10V
0
6
7
1.8 VGS=10V ID=20A
1.6 1.4 1.2 1 0.8
0
5
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
25
50
75
100
125
150
175
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
10
1.0E+02 ID=20A
1.0E+01
8
40
6
125°C
IS (A)
1.0E+00 RDS(ON) (mΩ Ω)
5
2
6 RDS(ON) (mΩ Ω)
4
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
125°C
1.0E-01 25°C 1.0E-02
4
1.0E-03 2
25°C
0
1.0E-04 1.0E-05
5
7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev3 : Sep 2011
6
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT290L/AOB290L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
10000 VDS=50V ID=20A Ciss
8000 Capacitance (pF)
VGS (Volts)
8
6
4
2
6000
4000 Coss 2000
0
Crss
0 0
20
40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics
100
0
20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics
5000
1000.0
TJ(Max)=175°C TC=25°C
10µs RDS(ON)
10µs 100µs
10.0
4000
1ms
DC
Power (W)
ID (Amps)
100.0
100
10ms 1.0
TJ(Max)=175°C TC=25°C
0.1
17 5 2 10
3000 2000 1000
0.0
0 0.01
0.1
1 10 VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s) 18 Junction-toFigure 10: Single Pulse Power Rating Case (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.3°C/W
PD
0.1 Single Pulse
Ton T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev3 : Sep 2011
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AOT290L/AOB290L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600
TA=25°C 100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
TA=150°C
TA=125°C
500 400 300 200 100
10
0 1
10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C)
150
0
25
50
75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F)
10000 TA=25°C
120
1000 Power (W)
Current rating ID(A)
175
90
60
100
10
30
0
1 0
25
50
75
100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F)
175
0.001
0.1
10
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient Thermal Resistance
10 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
40
RθJA=60°C/W 0.1 0.01
PD 0.001
Ton
Single Pulse
T
0.0001 0.0001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev3 : Sep 2011
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AOT290L/AOB290L
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev3 : Sep 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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