Transcript
AOT2N60/AOTF2N60 600V,2A N-Channel MOSFET
General Description
Product Summary
The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V)
700V@150℃ 2A
RDS(ON) (at VGS=10V)
< 4.4Ω
100% UIS Tested 100% Rg Tested
For Halogen Free add "L" suffix to part number: AOT2N60L & AOTF2N60L
TO-220
G
D
Top View
D
G S
TO-220F
G D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT2N60 Symbol Drain-Source Voltage VDS
600
Gate-Source Voltage
±30
Continuous Drain Current
VGS TC=25°C TC=100°C
AOTF2N60
V
2
ID
Units V
2*
1.7
1.7*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
2
A
Repetitive avalanche energy C
EAR
60
mJ
Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D
EAS dv/dt
120 5
mJ V/ns W
8
PD
31 0.25
TJ, TSTG
-55 to 150
W/ oC °C
300
°C
TL Symbol RθJA RθCS
AOT2N60 65
AOTF2N60 65
Units °C/W
0.5 1.7
-4
°C/W °C/W
Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Rev5: July 2010
74 0.6
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AOT2N60/AOTF2N60
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS BVDSS
Drain-Source Breakdown Voltage
BVDSS /∆TJ
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.56
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
±100 3
µA
4
4.5
nΑ V
4.4
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1A
3.6
gFS
Forward Transconductance
VDS=40V, ID=1A
3.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.79
S
IS
Maximum Body-Diode Continuous Current
2
A
ISM
Maximum Body-Diode Pulsed Current
8
A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=2A
215
270
325
pF
23
29
35
pF
2.2
2.8
3.4
pF
3.5
4.4
6.6
Ω
9.5
11.4
nC
Qgs
Gate Source Charge
1.9
2.3
nC
Qgd
Gate Drain Charge
4.7
5.6
nC
tD(on)
Turn-On DelayTime
17.2
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time Body Diode Reverse Recovery Time
Qrr
ns
VGS=10V, VDS=300V, ID=2A, RG=25Ω
14.3
ns
27
ns
IF=2A,dI/dt=100A/µs,VDS=100V
154
185
Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V
0.80
1
17
ns ns µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev5: July 2010
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AOT2N60/AOTF2N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5
10 10V
VDS=40V
-55°C
4 6.5V
ID(A)
ID (A)
3 6V
125°C
1
2
1
25°C
VGS=5.5V 0
0.1 0
5
10
15
20
25
30
2
4
VDS (Volts) Fig 1: On-Region Characteristics 6.5
8
10
2.5 Normalized On-Resistance
6.0 5.5 RDS(ON) (Ω )
6
VGS(Volts) Figure 2: Transfer Characteristics
5.0 4.5 VGS=10V
4.0 3.5 3.0
VGS=10V ID=1A
2
1.5
1
0.5
0 0
1
2
3
4
5
-100
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
-50
0
50
100
150
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01
1.2
40 1.0E-01 IS (A)
BVDSS (Normalized)
1.0E+00 1.1
1
125°C
1.0E-02 25°C 1.0E-03
0.9 1.0E-04 1.0E-05
0.8 -100
-50
0
50
100
150
200
TJ (°C) Figure 5:Break Down vs. Junction Temperature
Rev5: July 2010
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT2N60/AOTF2N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
1000 VDS=480V ID=2A
Ciss Capacitance (pF)
VGS (Volts)
12
9
6
100
Coss
10 Crss
3
0
1 0
3
6
9
12
15
0.1
Qg (nC) Figure 7: Gate-Charge Characteristics 10
1
10 VDS (Volts) Figure 8: Capacitance Characteristics
100
10
10µs
10µs RDS(ON) limited
100µs 1ms 10ms
DC
0.1
ID (Amps)
ID (Amps)
1
RDS(ON) limited
1
100µs 1ms 10ms
0.1
0.01
0.1s 1s
DC
TJ(Max)=150°C TC=25°C
TJ(Max)=150°C TC=25°C 0.01 1
10
100
1000
1
VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT2N60 (Note F)
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe Operating Area for AOTF2N60 (Note F)
Current rating ID(A)
2.5
2.0
1.5
1.0
0.5
0.0 0
Rev5: July 2010
25
50
75 100 125 TCASE (°C) Figure 11: Current De-rating (Note B)
150
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AOT2N60/AOTF2N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.7°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01 Single Pulse 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT2N60 (Note F)
Zθ JC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01 Single Pulse 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF2N60 (Note F)
Rev5: July 2010
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AOT2N60/AOTF2N60
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ +
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs Ig Charge
Res istive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
+ VDC
90% Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR Id
DUT Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt
Vds + DUT Vgs Vds -
Isd Vgs
Ig
Rev5: July 2010
L
Isd
+ Vdd
trr
dI/dt IRM
Vdd
VDC
-
IF
Vds
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