Transcript
AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET
General Description
Product Summary
The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V)
1100@150℃ 2.8A
RDS(ON) (at VGS=10V)
< 6Ω
100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT3N100 & AOTF3N100L Top View D
TO-220F
TO-220
G AOT3N100
D
S
G
AOTF3N100
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT3N100 AOTF3N100 Symbol Drain-Source Voltage 1000 VDS Gate-Source Voltage Continuous Drain Current
VGS TC=25°C TC=100°C
±30
V
2.8
ID
Units V
2.8*
1.8
1.8*
A
Pulsed Drain Current C
IDM
10
Avalanche Current C
IAR
2.2
A
Repetitive avalanche energy C
EAR
72
mJ
145 5
mJ V/ns W
Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Maximum Junction-to-Ambient A,D RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Rev. 1.0 January 2013
132
38
1.1
0.3 -55 to 150
W/ oC °C
300
°C
AOT3N100 65 0.5 0.95
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AOTF3N100 65 -3.3
Units °C/W °C/W °C/W
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AOT3N100/AOTF3N100
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
1000
Typ
Max
Units
STATIC PARAMETERS BVDSS
Drain-Source Breakdown Voltage
BVDSS /∆TJ
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
1100
V
ID=250µA, VGS=0V
1.07
V/ oC
VDS=1000V, VGS=0V
1
VDS=800V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100 3.3
µA
4
4.5
nΑ V
6
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
4.8
gFS
Forward Transconductance
VDS=40V, ID=1.5A
4
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
2.8
A
ISM
Maximum Body-Diode Pulsed Current
10
A pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge Qgs
Gate Source Charge
Qgd
S
0.76
550
690
830
30
44
60
pF
2
5
8
pF
1.6
3.5
5.2
Ω
15
20
nC
10 VGS=10V, VDS=800V, ID=3A
3.8
nC
Gate Drain Charge
4.7
nC
tD(on)
Turn-On DelayTime
22
ns
tr
Turn-On Rise Time
25
ns
tD(off)
Turn-Off DelayTime
40
ns
tf trr
Turn-Off Fall Time IF=3A,dI/dt=100A/µs,VDS=100V
300
400
500
Qrr
Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
2.7
3.7
4.7
Body Diode Reverse Recovery Time
VGS=10V, VDS=500V, ID=3A, RG=25Ω
24
ns ns µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 January 2013
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AOT3N100/AOTF3N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
5
VDS=40V
10V 4
-55°C
10
6V ID(A)
ID (A)
3
5.5V
2
125°C 1
1
0
VGS=5V 0
5
10
15
20
25
25°C 0.1
30
2
4
VDS (Volts) Fig 1: On-Region Characteristics 15
8
10
Normalized On-Resistance
3
12
RDS(ON) (Ω)
6
VGS(Volts) Figure 2: Transfer Characteristics
9 VGS=10V 6
3
2.5
1.5 1 0.5
0 0
1
2
3
4
5
VGS=10V ID=1.5A
2
0 -100
6
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
-50
0
50
100
150
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
1E+02
1.2
1E+00 40 125°C IS (A)
BVDSS (Normalized)
1E+01 1.1
1
1E-01 1E-02
25°C
0.9 1E-03 0.8 -100
1E-04 -50
0
50
100
150
200
TJ (°C) Figure 5:Break Down vs. Junction Temperature
Rev.1.0 January 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT3N100/AOTF3N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
10000 VDS=800V ID=3A Capacitance (pF)
VGS (Volts)
12
9
6
1000
Ciss
100
Coss
10
Crss
3
1
0 0
5
10
15
20
0.1
25
10
100
100
100.0
10.0
10
10µs
RDS(ON) limited
100µs
1.0
1ms 10ms
DC
10µs
RDS(ON) limited
ID (Amps)
ID (Amps)
1
VDS (Volts) Figure 8: Capacitance Characteristics
Qg (nC) Figure 7: Gate-Charge Characteristics
100µs
1
1ms DC
0.1
0.1 TJ(Max)=150°C TC=25°C
10ms 0.1s 1s
TJ(Max)=150°C TC=25°C 0.01
0.0 1
10
100
1000
10000
1
10
100
1000
10000
VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF3N100 (Note F)
VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT3N100 (Note F)
Current rating ID(A)
5
4
3
2
1
0 0
25
50
75
100
125
150
TCASE (°C) Figure 11: Current De-rating (Note B)
Rev.1.0 January 2013
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Page 4 of 6
AOT3N100/AOTF3N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.95°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD Single Pulse 0.01
Ton T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT3N100 (Note F)
ZθJC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.3°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01
Single Pulse
Ton T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF3N100 (Note F)
Rev.1.0 January 2013
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Page 5 of 6
AOT3N100/AOTF3N100
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
Res istive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
+ VDC
90% Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt
Vds + DUT Vgs Vds -
Isd Vgs
Ig
Rev.1.0 January 2013
L
Isd
+ VDC
-
IF
trr
dI/dt IRM
Vdd
Vdd Vds
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