Transcript
AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description
Product Summary TM
The AOT410L/AOB410L is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
VDS
100V
ID (at VGS=10V)
150A
RDS(ON) (at VGS=10V)
< 6.5mΩ (< 6.2mΩ∗)
RDS(ON) (at VGS= 7V)
< 7.5mΩ (< 7.2mΩ∗)
100% UIS Tested 100% Rg Tested
TO-263 D2PAK
TO-220 Top View
Bottom View
Top View
Bottom View
D
D
D D
D
G
D
G
G
SD
S
G
S G
S
S AOB410L
AOT410L
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT410L AOB410L
TO-220 TO-263
Tube Tape & Reel
1000 800
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TC=25°C
Continuous Drain Current G Pulsed Drain Current
Avalanche Current
C
Avalanche energy L=0.1mH C TC=25°C Power Dissipation B
TA=25°C Power Dissipation
A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
IAS,IAR
50
A
EAS,EAR
125
mJ
333
Steady-State Steady-State
W
167 1.9
RθJA RθJC
W
1.2
TJ, TSTG
Symbol t ≤ 10s
A
10
PDSM
TA=70°C
A
12
PD
TC=100°C
V
405
IDSM
TA=70°C
±25 108
IDM TA=25°C
Continuous Drain Current
Units V
150
ID
TC=100°C C
Maximum 100
-55 to 175
Typ 12 54 0.35
°C
Max 15 65 0.45
Units °C/W °C/W °C/W
* Surface mount package TO263
Rev.3.0: November 2013
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AOT410L/AOB410L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Conditions
Min
ID=250µA, VGS=0V
100
Zero Gate Voltage Drain Current
10 TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±25V
VGS(th)
Gate Threshold Voltage
VDS=5V ,ID=250µA
ID(ON)
On state drain current
8.8
11
VGS=7V, ID=20A T0220
5.8
7.5
VGS=10V, ID=20A TO263
4.8
6.2
5.5 70
7.2
mΩ S
0.63
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
V
6.5
VSD
Reverse Transfer Capacitance
nA
4
5.1
Forward Transconductance
Crss
±100 405
gFS
Output Capacitance
3
µA
VGS=10V, VDS=5V
VGS=7V, ID=20A TO263 VDS=5V, ID=20A
Coss
50 2
Units
VGS=10V, ID=20A T0220
Static Drain-Source On-Resistance
Max
V
VDS=100V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=10V, VDS=50V, ID=20A
A mΩ
mΩ mΩ
1
V
150
A
5290
6622
7950
pF
415
594
770
pF
130
215
300
pF
0.3
0.64
1
Ω
85
107
129
nC
23
28.5
34
nC
24
40
56
nC
28 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω
ns
22
ns
43.5
ns
14.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
19
27
35
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
124
177
230
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: November 2013
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AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150
180 10V 6.5V
6V
120
VDS=5V
150
7V
120 ID(A)
ID (A)
90
60
90
5.5V 60
30
125°C
30
VGS=5V 0
25°C
0 0
1
2
3
4
5
3
VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8
5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E)
7
Normalized On-Resistance
2.4
7 RDS(ON) (mΩ Ω)
4
VGS=7V
6 5 4
VGS=10V
3
2.2 VGS=10V ID=20A
2 1.8
17 5 2 VGS=7V 10
1.6 1.4
ID=20A
1.2 1 0.8
0
5
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
25
50
75
100
125
150
175
0
200
Temperature (°C) 18 Temperature Figure 4: On-Resistance vs. Junction (Note E)
12
1.0E+02 ID=20A 1.0E+01
40
125°C
1.0E+00 IS (A)
RDS(ON) (mΩ Ω)
10
8
125°C
1.0E-01 1.0E-02
6
25°C
25°C 1.0E-03
4
1.0E-04 5
6
7
8
9
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.3.0: November 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000
10 VDS=50V ID=20A
8000 Ciss Capacitance (pF)
VGS (Volts)
8
6
4
2
6000
4000 Coss 2000
0
Crss
0 0
20
40
60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics
120
0
1000.0
10
20
30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics
60
5000 10µs RDS(ON) limited
10µs 100µs 1ms
10.0
Power (W)
ID (Amps)
100.0
10ms DC 1.0 TJ(Max)=175°C TC=25°C
0.1
4000
TJ(Max)=175°C TC=25°C
3000
17 5 2 10
2000 1000
0.0
0 0.01
0.1
1 10 VDS (Volts)
100
1000
0.00001 0.0001
0.001
0.01
0.1
01
10
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1
40
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.45°C/W
0.1 PD
Single Pulse 0.01
Ton T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.3.0: November 2013
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AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300 Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000.0
TA=100°C
TA=25°C 100.0 TA=150°C
TA=125°C
10.0
250 200 150 100 50 0
1.0
0
1
10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C)
25
50
75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F)
175
1000
160
Power (W)
Current rating ID(A)
TA=25°C 120
80
100
17 5 2 10
10
40 1 0
0.0001 0
25
50
75
100
125
150
0.01
1
100
10000
0 Pulse Width (s) 18
175
TCASE (°C) Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=65°C/W
0.1 PD 0.01
Single Pulse Ton T
0.001 0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.3.0: November 2013
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Page 5 of 7
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
280
40
35
35
30 Qrr
200
25
25ºC
160
di/dt=800A/µs
30
20
125ºC
5 4 25ºC
Irm (A)
Qrr (nC)
240
40
3
trr
25
2
125ºC 25ºC
20
S
125ºC
di/dt=800A/µs
trr (ns)
320
1
S Irm 25ºC
80 0
5
10
15
20
25
15
15
10
10
30
-1 0
IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 280
40
240
160
20
25
25ºC
20
125ºC
IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 2
40
125ºC
30 25ºC
1.5 trr
10 Irm
10 125ºC
0 500
0
1000
di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
Rev.3.0: November 2013
0.5 S
25ºC
0 0
1
20 25ºC
80 40
30
Is=20A
Irm (A)
Qrr (nC)
15
50
30
Qrr
10
125ºC
200
120
5
trr (ns)
Is=20A
0
125ºC
S
120
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0 0
200
400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt
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AOT410L/AOB410L
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & W aveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & W aveforms Q rr = - Idt
Vds + DUT Vgs
Vds -
Isd Vgs
Ig
Rev.3.0: November 2013
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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