Transcript
AOT418L/AOB418L 100V N-Channel MOSFET SDMOS TM General Description
Product Summary
The AOT418L/AOB418L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
VDS
100V 105A
ID (at VGS=10V) RDS(ON) (at VGS=10V)
< 10mΩ
RDS(ON) (at VGS = 7V)
< 12mΩ
100% UIS Tested 100% Rg Tested
TO-263
TO220 Top View
Bottom View
Top View
D
D2PAK
D
Bottom View
D
D
D
G G
D
S S
D
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C
Continuous Drain Current G Pulsed Drain Current Continuous Drain Current
C
Units V V
82
A
280 9.5
IDSM
TA=70°C
S
S
105
IDM TA=25°C
G
Maximum 100 ±25
ID
TC=100°C
S
A
7.5
Avalanche Current C
IAS, IAR
60
A
Avalanche energy L=0.1mH C
EAS, EAR
180
mJ
TC=25°C Power Dissipation B
TC=100°C TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev0: May 2010
2.1
Steady-State Steady-State
RθJA RθJC
W
1.3
TJ, TSTG
Symbol t ≤ 10s
W
167
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
333
PD
-55 to 175
Typ 11 47 0.36
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°C
Max 15 60 0.45
Units °C/W °C/W °C/W
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AOT418L/AOB418L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V VDS=100V, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
280
100
VGS=7V, ID=20A TO263 VDS=5V, ID=20A
Forward Transconductance
VSD
Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G
IS
TJ=125°C
VGS=7V, ID=20A TO220 VGS=10V, ID=20A TO263
gFS
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
µA
50
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Units V
TJ=55°C
TO220
Max
10
IDSS
RDS(ON)
Typ
3.3
nA
3.9
V A
8.2
10
15
18
9.1
12
mΩ
7.9
9.7
mΩ
8.8 50
11.7
mΩ S
0.67
mΩ
1
V
105
A
3460
4334
5200
pF
VGS=0V, VDS=50V, f=1MHz
265
382
500
pF
78
131
185
pF
VGS=0V, VDS=0V, f=1MHz
0.2
0.45
0.7
Ω
55
69
83
nC
VGS=10V, VDS=50V, ID=20A
16
20
24
nC
22
31
nC
13 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω
21
ns
15
ns
38
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
19
27
35
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
90
129
170
nC
12
ns
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: May 2010
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AOT418L/AOB418L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100
10V
VDS=5V
6V
80
80
7V
5.5V
60 ID(A)
ID (A)
60
40
40 5V
125°C
20
20
25°C
VGS=4.5V 0
0 0
1
2
3
4
2
5
12
5
6
7
Normalized On-Resistance
2.4
VGS=7V
10
8 VGS=10V 6
2.2
VGS=10V ID=20A
2 1.8
17 5 2 VGS=7V 10
1.6 1.4 1.2
ID=20A
1 0.8
4 0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E)
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
1.0E+02
20 ID=20A
1.0E+01
17
40
1.0E+00 14
125°C
IS (A)
RDS(ON) (mΩ)
4
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
RDS(ON) (mΩ)
3
11 25°C
125°C
1.0E-01 1.0E-02
25°C
1.0E-03
8
1.0E-04 1.0E-05
5 4
5
6
7
8
9
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev0: May 2010
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT418L/AOB418L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000
10
Capacitance (pF)
VGS (Volts)
6000
VDS=50V ID=20A
8
6
4
2
4000 3000 2000 Crss
0 0
10
20
30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics
0
70
1000.0 10µs 10µs
RDS(ON) limited
4000 Power (W)
1ms
DC
10ms
1.0 TJ(Max)=175°C TC=25°C
0.1 0.0 0.01
100
TJ(Max)=175°C TC=25°C
0.1
17 5 2 10
3000 2000 1000
1 10 VDS (Volts)
100
1000
0 1E-05 0.0001 0.001
0.01
0.1
1
0
10
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
1
40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics
100µs
10.0
10
20
5000
100.0 ID (Amps)
Coss
1000
0
ZθJC Normalized Transient Thermal Resistance
Ciss
5000
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.45°C/W
0.1 PD
0.01 Single Pulse
0.001 0.000001
0.00001
0.0001
Ton
0.001
0.01
T
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: May 2010
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AOT418L/AOB418L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300
TA=25°C
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
TA=150°C TA=125°C
250 200 150 100 50
10
0 1
0
10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C)
25
50
75
100
150
175
1000
120
TA=25°C
100
100
80
Power (W)
Current rating ID(A)
125
TCASE (°C) Figure 13: Power De-rating (Note F)
60 40
17 5 2 10
10
20 0 0
25
50
75
100
125
150
175
ZθJA Normalized Transient Thermal Resistance
1
1
100
0
10000
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C) Figure 14: Current De-rating (Note F)
10
1 0.01
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
40
0.1 PD 0.01
0.001 0.01
Ton
Single Pulse
0.1
1
10
T 100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: May 2010
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AOT418L/AOB418L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35
160
25ºC Qrr
30
125ºC
20
80
10
25ºC
40 0
2 trr
20
5
10
15
20
25
0.5 25ºC
5
30
0
150
25ºC Qrr
100
40
50
35
45
125º
15 10
50
25ºC
Irm
5
0 0
200
400
600
800
0 1000
20
0 25
30
2.5 Is=20A 2 125ºC
30 25ºC
25 20
1.5 trr 1
125ºC
15 10 25ºC
0
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0.5
S
5
di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
Rev0: May 2010
15
35
25 20
10
40
30
125º
5
IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current
Irm (A)
Qrr (nC)
200
125ºC
trr (ns)
Is=20A
1.5 1
S
IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 250
25ºC
10
0 0
2.5
25
15 Irm
125ºC
30
40
S
125ºC
trr (ns)
200
120
3 di/dt=800A/µs
Irm (A)
Qrr (nC)
di/dt=800A/µs
S
50
240
0
200
400
600
800
0 1000
di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt
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AOT418L/AOB418L
Gate Charge Test Circuit & Waveform Vgs
Qg 10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev0: May 2010
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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