Aot42s60/aob42s60 α 600v 37a Mos

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AOT42S60/AOB42S60 600V 37A α MOS TM Power Transistor General Description Product Summary The AOT42S60 & AOB42S60 have been fabricated using TM the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these devices can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 166A RDS(ON),max 0.109Ω Qg,typ 40nC Eoss @ 400V 9.2µJ 100% UIS Tested 100% Rg Tested Top View TO-263 D2PAK TO-220 G D D S G S S G AOT42S60 AOB42S60 Orderable Part Number Package Type Form Minimum Order Quantity AOT42S60L AOB42S60L TO-220 Green TO-263 Green Tube Tape & Reel 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT42S60/AOB42S60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current Avalanche Current C C Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25 oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Rev4: April 2014 V 37 ID 23 IDM C Repetitive avalanche energy ±30 Units V A 166 IAR 11 A EAR 234 mJ EAS 1345 mJ W 417 PD 3.3 100 20 -55 to 150 o W/ C 300 °C AOT42S60/AOB42S60 Units dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC www.aosmd.com V/ns °C 65 °C/W 0.5 0.3 °C/W °C/W Page 1 of 6 AOT42S60/AOB42S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Units 600 - - 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM - ±100 3.2 3.8 nΑ V VGS=10V, ID=21A, TJ=25°C - 0.095 0.109 Ω VGS=10V, ID=21A, TJ=150°C - 0.27 0.31 Ω IS=21A,VGS=0V, TJ=25°C - 0.84 - V Maximum Body-Diode Continuous Current - - 37 A Maximum Body-Diode Pulsed Current - - 166 A - 2154 - pF - 135 - pF - 103 - pF - 344 - pF VGS=0V, VDS=100V, f=1MHz - 2.7 - pF VGS=0V, VDS=0V, f=1MHz - 1.7 - Ω - 40 - nC - 11.7 - nC nC DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) 2.5 VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=21A Qgs Gate Source Charge Qgd Gate Drain Charge - 11.9 - tD(on) Turn-On DelayTime - 38.5 - ns tr Turn-On Rise Time - 53 - ns - 136 - ns - 46 - ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time VGS=10V, VDS=400V, ID=21A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=21A,dI/dt=100A/µs,VDS=400V - 473 - ns Irm IF=21A,dI/dt=100A/µs,VDS=400V - 38.5 - Qrr Body Diode Reverse Recovery Charge IF=21A,dI/dt=100A/µs,VDS=400V - 10.5 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=6.7A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev4: April 2014 www.aosmd.com Page 2 of 6 AOT42S60/AOB42S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 80 10V 70 10V 7V 50 60 6V 5.5V ID (A) ID (A) 50 6V 7V 40 30 40 5.5V 30 5V 20 20 5V VGS=4.5V 10 10 VGS=4.5V 0 0 0 5 10 15 0 20 5 1000 15 20 0.30 -55°C VDS=20V 0.25 100 125°C RDS(ON) (Ω) 0.20 ID(A) 10 1 25°C 0.1 VGS=10V 0.15 0.10 0.05 0.00 0.01 2 3 4 5 6 7 8 9 0 10 15 30 45 60 75 90 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage VGS(Volts) Figure 3: Transfer Characteristics 1.2 3 2.5 VGS=10V ID=21A 2 BVDSS (Normalized) Normalized On-Resistance 10 VDS (Volts) Figure 2: On-Region Characteristics@125°C VDS (Volts) Figure 1: On-Region Characteristics@25°C 1.5 1 1.1 1 0.9 0.5 0 -100 -50 0 50 100 150 200 Temperature (°C) Figure 5: On-Resistance vs. Junction Temperature Rev4: April 2014 www.aosmd.com 0.8 -100 -50 0 50 100 150 200 TJ (oC) Figure 6: Break Down vs. Junction Temperature Page 3 of 6 AOT42S60/AOB42S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1.0E+02 1.0E+01 12 VDS=480V ID=21A 125°C 1.0E-01 25°C VGS (Volts) IS (A) 1.0E+00 1.0E-02 1.0E-03 9 6 3 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 0 1.0 0 VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) 15 30 45 60 Qg (nC) Figure 8: Gate-Charge Characteristics 10000 20 16 1000 Eoss(uJ) Capacitance (pF) Ciss Coss 100 Eoss 12 8 Crss 10 4 0 1 0 100 200 300 400 500 VDS (Volts) Figure 9: Capacitance Characteristics 600 0 100 200 300 400 500 VDS (Volts) Figure 10: Coss stored Energy 600 1000 ID (Amps) 100 10µs RDS(ON) limited 10 100µs 1ms 10ms DC 1 TJ(Max)=150°C TC=25°C 0.1 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOT(B)42S60(Note F) Rev4: April 2014 www.aosmd.com Page 4 of 6 AOT42S60/AOB42S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 1500 35 Current rating ID(A) EAS(mJ) 1200 900 600 300 30 25 20 15 10 5 0 0 25 50 75 100 125 150 TCASE (°C) Figure 12: Avalanche energy 175 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 ZθJC Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOT(B)42S60(Note F) Rev4: April 2014 www.aosmd.com Page 5 of 6 AOT42S60/AOB42S60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev4: April 2014 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6