Transcript
AOT462L/AOB462L 60V N-Channel MOSFET
General Description
Product Summary
The AOT462L/AOB462L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V)
60V 35A
RDS(ON) (at VGS=10V)
< 18mΩ
100% UIS Tested 100% Rg Tested
TO220 Top View
TO-263 D2PAK
Bottom View Top View
D
Bottom View
D
D D
D
AOT462L
G
D
SD
S
G
G G
Gate-Source Voltage
VGS TC=25°C
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.3mH C TC=25°C Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
26
A
EAS, EAR
101
mJ
TJ, TSTG
Thermal Characteristics Parameter Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol RθJA RθJC
Rev.2.0: August 2013
A
IAS, IAR
Junction and Storage Temperature Range
Steady-State
A
7
100
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W
50 2.1
PDSM
Steady-State
V
6
PD
TA=25°C
±20
120
IDSM
TA=70°C
Units V
27
IDM TA=25°C
Maximum 60 35
ID
TC=100°C
Continuous Drain Current
S
S AOB462L
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G
G
S
W
1.3 -55 to 175
Typ 45 1.25
°C
Max 60 1.5
Units °C/W °C/W
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AOT462L/AOB462L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±20V VDS=VGS ID=250µA
2
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
±100
nA
3.1
4
V
14.5
18
TJ=125°C
25
30
14.2
17.7
TJ=125°C
24.5
30
VGS=10V, ID=30A TO220 VGS=10V, ID=30A TO263 gFS
Forward Transconductance
VDS=5V, ID=30A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
A
50 0.73
1840 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=30A
VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω
mΩ mΩ S
1
V
35
A
2400
pF
185
pF
80
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs
µA
5
Gate Threshold Voltage
Units V
1
VGS(th)
Static Drain-Source On-Resistance
Max
60
VDS=60V, VGS=0V
IGSS
RDS(ON)
Typ
pF
2.8
4.2
27.8
36
Ω nC
9.9
nC
6.6
nC
12
ns
5.2
ns
38
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=30A, dI/dt=100A/µs
35
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
47
27
ns 64 62
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: August 2013
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AOT462L/AOB462L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
140
VDS=5V
7V 120
10V
80 6V 60
80
ID(A)
ID (A)
100
60
40
5V
125°C
40 20 20
25°C -40°C
VGS=4.5V 0
0 0
1
2
3
4
2
5
4
5
6
7
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E) 25 Normalized On-Resistance
2.2
22 RDS(ON) (mΩ Ω)
3
19 VGS=10V 16 13
2 VGS=10V ID=30A
1.8
17 5 2 10
1.6 1.4 1.2 1 0.8
10 0
0
20
40 60 80 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
200
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
40
1.0E+02
35
1.0E+01
30
1.0E+00
40
125°C 25
IS (A)
RDS(ON) (mΩ Ω)
ID=30A
20
125°C
1.0E-01
25°C
1.0E-02
25°C 1.0E-03
15 -40°C
10
-40°C
1.0E-04 1.0E-05
5 2
12 17 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.2.0: August 2013
7
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT462L/AOB462L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
2500 VDS=30V ID=30A 2000 Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1500
1000 Coss
2
500
0
Crss
0 0
5
10
15
20
25
30
0
10
30
40
50
60
10000
1000.0
RDS(ON) limited
TJ(Max)=175°C TC=25°C
10µs
100.0
10µs
100µs
DC
10.0
1000
17 5 2 10
100
1ms
TJ(Max)=175°C TC=25°C
1.0
Power (W)
ID (Amps)
20
VDS (Volts) Figure 8: Capacitance Characteristics
Qg (nC) Figure 7: Gate-Charge Characteristics
10ms 10
1
10 VDS (Volts)
100
0.00001
0.0001
0.001
0.01
0.1
0
1
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
0.1 PD 0.01 Ton T
Single Pulse 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: August 2013
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AOT462L/AOB462L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120
TA=25°C TA=100°C Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=150°C
TA=125°C
10
90
60V 60
30
0 1
0 1
10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability C)
25
75 100 125 150 TCASE (° °C) Figure 13: Power De-rating (Note F)
1000 (Note
50
10000
60
TA=25°C
50
1000 40
Power (W)
Current rating ID(A)
175
30
17 5 2 10
100
20
10 10
1
0 0
25
50
75
100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F)
0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
175
0.001
Zθ JA Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
40
0.1
PD
0.01
Single Pulse Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: August 2013
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AOT462L/AOB462L AOT462L/AOB462L
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev.2.0: August 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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