Transcript
AOT480L/AOB480L 80V N-Channel MOSFET TM SDMOS General Description
Product Summary TM
The AOT480L & AOB480L is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge & low Qrr. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
VDS
80V
ID (at VGS=10V)
180A
RDS(ON) (at VGS=10V)
< 4.5mΩ (< 4.2mΩ∗)
RDS(ON) (at VGS = 7V)
< 5.5mΩ (< 5.2mΩ∗)
100% UIS Tested 100% Rg Tested
TO-220 Top View
TO-263 D2PAK
Bottom View Top View
D
Bottom View
D
D D
D
G
AOT480L
D
G
G
SD
S
G
S G
S
S AOB480L
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT480L AOB480L
TO-220 TO-263
Tube Tape & Reel
1000 800
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TC=25°C
Continuous Drain Current G Pulsed Drain Current
Avalanche Current
C
V A
500 15
IDSM
TA=70°C
±25 134
IDM TA=25°C
Continuous Drain Current
Units V
180
ID
TC=100°C C
Maximum 80
A
12
IAS,IAR
90
A
Avalanche energy L=0.1mH C
EAS,EAR
405
mJ
VGS Spike
VSPIKE
30
V
20ms TC=25°C
Power Dissipation B
PD
TC=100°C TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Rev.4.0: November 2013
1.9
Steady-State Steady-State
RθJA RθJC
W
1.2
TJ, TSTG
Symbol t ≤ 10s
W
167
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263
333
-55 to 175
Typ 12 54 0.35
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°C
Max 15 65 0.45
Units °C/W °C/W °C/W
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AOT480L/AOB480L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Min
ID=250µA, VGS=0V
Typ
80 10 TJ=55°C
50
IGSS
Gate-Body leakage current
VDS=0V, VGS=±25V
VGS(th)
Gate Threshold Voltage
VDS=5V ,ID=250µA
2
ID(ON)
On state drain current
VGS=10V, VDS=5V
500
Units V
VDS=80V, VGS=0V
Zero Gate Voltage Drain Current
Max
µA
±100
nA
2.8
4
V
3.7
4.5
6.1
7.3
VGS=7V, ID=20A TO220
4.2
5.5
VGS=10V, ID=20A TO263
3.4
4.2
3.9 60
5.2
Forward Transconductance
VGS=7V, ID=20A TO263 VDS=5V, ID=20A
mΩ S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.6
IS
Maximum Body-Diode Continuous Current
VGS=10V, ID=20A TO220
RDS(ON)
gFS
Static Drain-Source On-Resistance
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs
VGS=10V, VDS=40V, ID=20A
Gate Source Charge
A mΩ
mΩ mΩ
1
V
180
A
5200
6520
7820
pF
570
810
1060
pF
185
310
430
pF
0.3
0.64
1
Ω
92
116
140
nC
24
30
36
nC
38
53
nC
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
23
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
20
28
36
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
90
132
170
VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω
31.5
ns
33
ns
46
ns
17.5
ns ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: November 2013
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AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200
180 VDS=5V
6.5V
10V
6V
150
7V
160
120 ID(A)
ID (A)
120 5.5V
90
80 60 5V
40
125°C
30
25°C
VGS=4.5V 0
0 0
1
2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E)
2
5
4
5
6
7
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
7 Normalized On-Resistance
2.2
6 RDS(ON) (mΩ Ω)
3
5 VGS=7V 4 VGS=10V
3 2
2
VGS=10V ID=20A
1.8
17 5 2 VGS=7V10
1.6 1.4 1.2
ID=20A
1 0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
200
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E)
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
9
1.0E+02 ID=20A
8
1.0E+01
7
1.0E+00
125°C IS (A)
RDS(ON) (mΩ Ω)
40
6
125°C
1.0E-01
25°C
1.0E-02
5 25°C
4
1.0E-03 1.0E-04
3 4
5
7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.4.0: November 2013
6
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 9000
10 VDS=40V ID=20A
8000 Ciss
7000 Capacitance (pF)
VGS (Volts)
8
6
4
6000 5000 4000 3000 2000
2
Coss
Crss
1000 0
0 0
20
40
60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics
0
120
20
40 60 VDS (Volts) Figure 8: Capacitance Characteristics
5000
1000.0
TJ(Max)=175°C TC=25°C
10µs RDS(ON) limited
10µs 100µs
4000
1ms 10ms
10.0
Power (W)
ID (Amps)
100.0
DC 1.0
TJ(Max)=175°C TC=25°C
0.1
2000
1000 0 0.01
0.1
1 10 VDS (Volts)
100
1000
0.00001 0.0001 0.001
Zθ JC Normalized Transient Thermal Resistance
0.01
0.1
1
0
10
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
1
17 5 2 10
3000
0.0
10
80
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.45°C/W
0.1 PD 0.01
Single Pulse Ton T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.4.0: November 2013
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Page 4 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
IAR (A) Peak Avalanche Current
1000.0
360
Power Dissipation (W)
320
TA=25°C TA=100°C 100.0 TA=150°C TA=125°C
280 240 200 160 120 80 40 0
10.0
0
1
10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C)
50
75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F)
175
1000
200
TA=25°C
160 120
Power (W)
Current rating ID(A)
25
80
100
17 5 2 10
10 40 0 0
25
50
75
100
125
150
175
1 0.0001
TCASE (°C) Figure 14: Current De-rating (Note F)
1 100 0 10000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.01
Zθ JA Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
40
0.1 PD 0.01
Single Pulse Ton T
0.001 0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.4.0: November 2013
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Page 5 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 240
50 125ºC
di/dt=800A/µs
36
42
200
125ºC
28
26
trr (ns)
25ºC
160
Irm
120
10
80
25ºC S
5
10
15
20
25
4
30
240
0 0
IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current
5
10
15
20
25
30
IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current
40
50
2 Is=20A
Is=20A
125ºC
125ºC
40
30
1.5
160
125ºC
Qrr
80
20
25ºC
40
10
30 trr 20 25ºC
S
10
Irm
0.5
125ºC
0
0 0
1
S
25ºC
120
trr (ns)
25ºC Irm (A)
Qrr (nC)
0.5 125ºC
8
2
200
25ºC
20
12 25ºC
0
trr
16
18
125ºC
1
24 Irm (A)
Qrr
S
34 Qrr (nC)
1.5 di/dt=800A/µs
32
200
400
600
800
1000
di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
Rev.4.0: November 2013
0
0 0
200
400
600
800
1000
di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt
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Page 6 of 7
AOT480L/AOB480L
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev.4.0: November 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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