Transcript
AOT482L/AOB482L 80V N-Channel MOSFET SDMOS TM General Description
Product Summary
The AOT482L/AOB482L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
VDS
80V 105A
ID (at VGS=10V) RDS(ON) (at VGS=10V)
< 7.2mΩ
RDS(ON) (at VGS = 7V)
< 9mΩ
100% UIS Tested 100% Rg Tested
TO-263
TO220 Top View
Bottom View
Top View
D
D2PAK
D
Bottom View
D
D
D
G G
D
S S
D
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C
Continuous Drain Current G Pulsed Drain Current Continuous Drain Current
C
Units V V
82
A
330 11
IDSM
TA=70°C
S
S
105
IDM TA=25°C
G
Maximum 80 ±25
ID
TC=100°C
S
A
9
Avalanche Current C
IAS, IAR
82
A
Avalanche energy L=0.1mH C
EAS, EAR
336
mJ
TC=25°C Power Dissipation B
TC=100°C TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Pev 0: May 2010
2.1
Steady-State Steady-State
RθJA RθJC
W
1.3
TJ, TSTG
Symbol t ≤ 10s
W
167
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
333
PD
-55 to 175
Typ 11 47 0.36
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°C
Max 15 60 0.45
Units °C/W °C/W °C/W
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AOT482L/AOB482L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Min
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V VDS=80V, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
330
100
TJ=125°C
VGS=7V, ID=20A TO220 VGS=10V, ID=20A TO263 VGS=7V, ID=20A TO263 VDS=5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge
µA
50
VGS=10V, ID=20A
IS
V
TJ=55°C
Static Drain-Source On-Resistance
Units
10
Zero Gate Voltage Drain Current
TO220
Max
80
IDSS
RDS(ON)
Typ
VGS=10V, VDS=40V, ID=20A
3.1
nA
3.7
V A
5.9
7.2
11
13
6.8
9
mΩ
5.6
6.9
mΩ
6.5 50
8.7
mΩ S
0.64
mΩ
1
V
105
A
3240
4054
4870
pF
320
458
600
pF
95
160
225
pF
0.2
0.45
0.7
Ω
53
66.8
81
nC
16
20.8
25
nC
12
20.2
30
nC
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
18
26
34
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
75
108
140
VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω
26
ns
18
ns
48
ns
21
ns ns nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: May 2010
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AOT482L/AOB482L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100
10V
VDS=5V
7V 6V
80
80 60
5.5V
ID(A)
ID (A)
60
40
40
125°C 20
20
VGS=5V
25°C
0
0 0
1
2
3
4
3
5
4
VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12
6
7
Normalized On-Resistance
2.4
10 RDS(ON) (mΩ)
5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VGS=7V
8 6
VGS=10V 4
2.2 VGS=10V ID=20A
2 1.8
17 5 2 10 VGS=7V
1.6 1.4 1.2
ID=20A
1 0.8
2 0
5
0
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E)
1.0E+02
16 ID=20A
1.0E+01
40
125°C
12 10
25°C
8
125°C
1.0E+00 IS (A)
RDS(ON) (mΩ)
14
25°C 1.0E-01 1.0E-02
6
1.0E-03
4
1.0E-04 5
6
7
8
9
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: May 2010
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT482L/AOB482L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6000
10 VDS=40V ID=20A
5000 Ciss Capacitance (pF)
VGS (Volts)
8
6
4
4000 3000 2000 Coss
2
1000
0
0 0
10
20
30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics
70
0
RDS(ON) limited
10µs
1ms DC
10ms
1.0 TJ(Max)=175°C TC=25°C
0.1 0.0 0.01
80
0.1
TJ(Max)=175°C TC=25°C
17 5 2 10
3000 2000 1000
1 10 VDS (Volts)
100
1000
0 1E-05 0.0001 0.001
0.01
0.1
0
1
10
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
1
30 40 50 60 70 VDS (Volts) Figure 8: Capacitance Characteristics
4000
100µs
10.0
10
20
10µs
Power (W)
ID (Amps)
100.0
10
5000
1000.0
ZθJC Normalized Transient Thermal Resistance
Crss
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.45°C/W
0.1 PD
0.01 Ton Single Pulse
0.001 0.000001
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: May 2010
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AOT482L/AOB482L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100 TA=150°C TA=125°C
10
250 200 150 100 50
1
0 1
10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C)
0
25
50
75
100
150
175
1000
120
TA=25°C
100 80
Power (W)
Current rating ID(A)
125
TCASE (°C) Figure 13: Power De-rating (Note F)
60 40
100
17 5 2 10
10
20 0 0
25
50
75
100
125
150
175
ZθJA Normalized Transient Thermal Resistance
1
1
100 0
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C) Figure 14: Current De-rating (Note F)
10
1 0.01
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1 PD
0.01 Single Pulse
0.001 0.01
0.1
Ton
1
10
T
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: May 2010
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AOT482L/AOB482L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 di/dt=800A/µs
125ºC
35
120
25ºC
25 20
125ºC
80 40
0 0
5
10
15
20
25
0.5 125º
0
30
0 0
IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 250
5
10
15
20
50
50
2.5
25ºC
100
125ºC
Qrr
40
30
30
20
125ºC
10
trr
20
0 600
1
25ºC
800
0 1000
S
10
25ºC 400
1.5
25ºC
50 Irm
2
trr (ns)
150
40
Irm (A)
Qrr (nC)
125ºC
0.5
125ºC 0
di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
Rev 0: May 2010
30
Is=20A
200
200
25
IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current
Is=20A
0
1
S
5
5
0
1.5
25ºC
10
10
25ºC
2 25ºC
15
15
Irm
2.5
125ºC
trr
20
trr (ns)
30
Qrr
di/dt=800A/µs
25 Irm (A)
Qrr (nC)
30
40
160
3
S
200
35
45
S
240
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0
200
400
600
800
0 1000
di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt
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AOT482L/AOB482L
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs Ig Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev 0: May 2010
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt I RM
Vdd
Vds
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