Transcript
AOTF10N90 900V, 10A N-Channel MOSFET
General Description
Product Summary
The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V)
1000V@150℃ 10A
RDS(ON) (at VGS=10V)
< 0.98Ω
100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF10N90L Top View
D
TO-220F
G G
D
S
S
AOTF10N90
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current
VGS TC=25°C TC=100°C
ID
AOTF10N90 900
Units V
±30
V
10* 7*
A
Pulsed Drain Current C
IDM
38
Avalanche Current C
IAR
3.7
A
Repetitive avalanche energy C
EAR
205
mJ
410 5 50
mJ V/ns W
0.4 -55 to 150
W/ oC °C
300
°C
AOTF10N90 65 2.5
Units °C/W °C/W
Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Rev0: Oct 2012
www.aosmd.com
Page 1 of 5
AOTF10N90
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
900
Typ
Max
Units
STATIC PARAMETERS BVDSS
Drain-Source Breakdown Voltage
BVDSS /∆TJ
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V
V
0.9
V/ oC
VDS=900V, VGS=0V
1
VDS=720V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS ISM
±100
µA
4
4.5
nΑ V
VGS=10V, ID=5A
0.82
0.98
Ω
VDS=40V, ID=5A
17
IS=1A,VGS=0V
0.7
1
V
Maximum Body-Diode Continuous Current
10
A
Maximum Body-Diode Pulsed Current
38
A
DYNAMIC PARAMETERS Input Capacitance Ciss Coss
1000
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
3.4
S
2100
2630
3160
pF
VGS=0V, VDS=25V, f=1MHz
130
190
250
pF
10
18
26
pF
VGS=0V, VDS=0V, f=1MHz
1.5
3.4
5.2
Ω
45
60
75
nC
SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=720V, ID=10A
Qgs
Gate Source Charge
13
nC
Qgd tD(on)
Gate Drain Charge
27
nC
Turn-On DelayTime
64
tr
Turn-On Rise Time
ns
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time IF=10A,dI/dt=100A/µs,VDS=100V
460
575
700
Qrr
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
7.0
9.9
12.0
Body Diode Reverse Recovery Time
VGS=10V, VDS=450V, ID=10A, RG=25Ω
105
ns
155
ns
84
ns ns µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3.7A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Oct 2012
www.aosmd.com
Page 2 of 5
AOTF10N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25
100 -55°C VDS=40V
20
10V
6.5V 10
15
125°C
ID(A)
ID (A)
6V
10
1
VGS=5.5V
25°C
5
0 0
5
10
15
20
25
0.1
30
2
4
VDS (Volts) Fig 1: On-Region Characteristics 2.0
8
10
Normalized On-Resistance
3
1.6
RDS(ON) (Ω)
6
VGS(Volts) Figure 2: Transfer Characteristics
1.2
VGS=10V
0.8
0.4
5
10
15
20
VGS=10V ID=5A
2 1.5 1 0.5 0 -100
0.0 0
2.5
25
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
-50
0
50
100
150
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
1.2
1E+02
1E+0040 125°C IS (A)
BVDSS (Normalized)
1E+01 1.1
1
1E-01 25°C 1E-02 1E-03
0.9
1E-04 0.8 -100
1E-05 -50
0
50
100
150
200
TJ (°C) Figure 5: Break Down vs. Junction Temperature
Rev0: Oct 2012
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AOTF10N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000
15 VDS=720V ID=10A
12
Ciss
Capacitance (pF)
VGS (Volts)
1000 9
6
Coss
100 Crss 10
3
1
0 0
15
30
45
60
75
0.1
90
Qg (nC) Figure 7: Gate-Charge Characteristics
10
100
VDS (Volts) Figure 8: Capacitance Characteristics 100
12
10µs
RDS(ON) limited
10 10
100µs
8 ID (Amps)
Current rating ID(A)
1
6
1ms 1 10ms DC
4
0.1s
0.1 2
1s
TJ(Max)=150°C TC=25°C
0 0
25
50
75
100
125
150
0.01 1
TCASE (°C) Figure 9: Current De-rating (Note B)
10
100
1000
VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF10N90 (Note F)
ZθJC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01
Ton
Single Pulse 0.001 0.00001
0.0001
0.001
T
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF10N90 (Note F)
Rev0: Oct 2012
www.aosmd.com
Page 4 of 5
AOTF10N90
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ +
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs Ig Charge
Res istive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
+ VDC
90% Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR Id
DUT Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt
Vds + DUT Vgs Vds -
Isd Vgs
Ig
Rev0: Oct 2012
L
Isd
+ Vdd
trr
dI/dt IRM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 5 of 5
