Aotf20b65m2 650v, 20a Alpha Igbt With Soft And Fast Recovery Anti-parallel Diode

Transcript

AOTF20B65M2 650V, 20A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest Alpha IGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 20A VCE(sat) (TJ=25°C) 1.7V Applications • Motor Drives • Sewing Machines • Servo and General Purpose Inverters. • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-220F C G C E G E AOTF20B65M2 Orderable Part Number Package Type AOTF20B65M2 TO220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE Form Minimum Order Quantity Tube 1000 AOTF20B65M2 650 Units V ±30 V 402) Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax I CM 60 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 60 A Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤150°C Power Dissipation TC=25°C TC=100°C Junction and Storage Temperature Range IC IF 202) 402) 202) A I FM 60 A t SC 5 µs PD T J , T STG 45 18 -55 to 150 Maximum lead temperature for soldering TL 300 purpose, 1/8" from case for 5 seconds Thermal Characteristics AOTF20B65M2 Parameter Symbol R θ JA Maximum Junction-to-Ambient 65 Maximum IGBT Junction-to-Case R θ JC 2.8 Maximum Diode Junction-to-Case R θ JC 3.2 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) TO220F IC follows TO220/TO263. Rev.1.0: May 2015 A www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=20A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=20A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.7 2.15 TJ=125°C - 2.02 - TJ=150°C - 2.11 - TJ=25°C - 1.56 2 TJ=125°C - 1.65 - TJ=150°C - 1.63 - - 5.1 - V V V TJ=25°C - - 10 TJ=125°C - - 500 TJ=150°C - - 1000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=20A - 14 - S - 1216 - pF - 156 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 50 - pF Qg Total Gate Charge - 46 - nC Q ge Gate to Emitter Charge - 12 - nC Q gc Gate to Collector Charge - 21 - nC - 115 - A VGE=0V, VCC=0V, f=1MHz Gate resistance Rg SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 13 - Ω ns I C(SC) VGE=15V, VCC=520V, IC=20A VGE=15V, VCC=400V, tsc≤5us, TJ≤150°C Short circuit collector current t D(on) Turn-On DelayTime - 26 - tr Turn-On Rise Time - 32 - ns t D(off) Turn-Off Delay Time - 123 - ns tf Turn-Off Fall Time - 14 - ns E on Turn-On Energy - 0.58 - mJ E off Turn-Off Energy - 0.28 - mJ E total t rr Total Switching Energy - 0.86 - mJ Diode Reverse Recovery Time - 292 - Q rr Diode Reverse Recovery Charge - 0.8 - ns µC I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=150°C) - 5.6 - A t D(on) Turn-On DelayTime - 25 - ns tr Turn-On Rise Time - 34 - ns t D(off) Turn-Off Delay Time - 146 - ns tf Turn-Off Fall Time - 22 - ns E on Turn-On Energy - 0.64 - mJ E off Turn-Off Energy - 0.44 - mJ E total t rr Total Switching Energy - 1.08 - mJ - 432 - Q rr Diode Reverse Recovery Charge - 1.5 - ns µC I rm Diode Peak Reverse Recovery Current - 7.2 - A TJ=25°C VGE=15V, VCC=400V, IC=20A, RG=15Ω TJ=25°C IF=20A, di/dt=200A/µs, VCC=400V TJ=150°C VGE=15V, VCC=400V, IC=20A, RG=15Ω Diode Reverse Recovery Time TJ=150°C IF=20A, di/dt=200A/µs, VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: May 2015 www.aosmd.com Page 2 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 75 20V 20V 17V 75 15V 60 13V 17V 60 45 IC (A) IC (A) 15V 13V 11V 45 11V 30 9V 30 9V 15 15 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=150°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 50 60 VCE=20V 50 40 -40°C 40 30 IF (A) IC (A) 150°C 25°C 30 20 150°C 20 25°C 10 -40°C 10 0 0 3 6 9 12 15 0 0.5 VGE (V) Figure 3: Transfer Characteristic 1 1.5 2 2.5 3 VF (V) Figure 4: Diode Characteristic 5 3 2.5 4 40A IC=40A VSD (V) VCE(sat) (V) 2 3 IC=20A 2 20A 1.5 5A 1 1 IC=10A IF=1A 0.5 0 0 0 25 50 75 100 125 150 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: May 2015 www.aosmd.com 0 25 50 75 100 125 150 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=20A Cies 12 Capacitance (pF) VGE (V) 1000 9 6 Coes 100 Cres 10 3 0 1 0 10 20 30 40 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 8 16 24 32 40 VCE (V) Figure 8: Capacitance Characteristic 50 Power Disspation (W) 40 30 20 10 0 25 50 75 100 125 150 TCASE (°C) Figure 10: Power Disspation as a Function of Case 20 1E-02 1E-03 1E-04 12 ICE(S) (A) Current rating IC (A) 16 8 VCE=650V 1E-05 1E-06 VCE=520V 4 1E-07 0 1E-08 25 50 75 100 125 150 Rev.1.0: May 2015 0 25 50 75 100 125 150 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature TCASE (°C) Figure 11: Current De-rating www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 100 10 1 100 10 1 10 15 20 25 30 35 IC (A) Figure 13: Switching Time vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=15Ω) 10000 40 0 1000 30 60 90 120 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=20A) 150 7 Td(off) Tf Td(on) Tr 6 5 VGE(TH) (V) Switching Time (ns) Td(off) Tf Td(on) Tr 1000 Switching Time (ns) 1000 Switching Time (ns) 10000 Td(off) Tf Td(on) Tr 100 4 3 10 2 1 1 25 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=20A, Rg=15Ω) Rev.1.0: May 2015 www.aosmd.com 0 25 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 3 Eoff Eon 2.5 Etotal Switching Energy (mJ) SwitchIng Energy (mJ) Eoff Eon 2.5 2 1.5 1 Etotal 2 1.5 1 0.5 0.5 0 0 10 15 20 25 30 35 IC (A) Figure 17: Switching Loss vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=15Ω) 0 40 30 90 120 150 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=20A) 1.5 1.5 Eoff Eoff Eon Eon 1.2 1.2 Etotal Switching Energy (mJ) Switching Energy (mJ) 60 0.9 0.6 0.3 Etotal 0.9 0.6 0.3 0 0 25 50 75 100 125 150 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=20A, Rg=15Ω) Rev.1.0: May 2015 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=150°C, VGE=15V, IC=20A, Rg=15Ω) 500 Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 2000 40 600 32 480 150°C 24 360 25°C 30 25 150°C 1000 25°C Qrr 16 Trr 15 S Trr (ns) Irm (A) Qrr (nC) 20 1500 240 10 150°C 150°C 500 8 Irm 0 0 15 0 0 20 25 30 35 40 IF(A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 10 2000 40 600 1600 32 480 24 360 15 25 30 35 40 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 25 25°C 800 16 Trr (ns) 150°C 1200 Irm (A) Qrr (nC) 20 30 150°C Qrr 5 25°C 20 Trr 15 25°C S 25°C 10 S 120 240 10 150°C 400 8 Irm 150°C 120 5 25°C 25°C 0 0 100 200 300 400 500 600 di/dt (A/µs) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=20A) Rev.1.0: May 2015 S 0 0 100 www.aosmd.com 200 300 400 500 600 di/dt (A/µs) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=20A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.8°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 T 0.0001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 1E-06 T 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: May 2015 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: May 2015 www.aosmd.com Page 9 of 9