Transcript
AOTF296L 100V N-Channel MOSFET
General Description
Product Summary VDS
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications
Applications
ID (at VGS=10V)
100V 41A
RDS(ON) (at VGS=10V)
< 10mΩ
RDS(ON) (at VGS=6V)
< 12.5mΩ
100% UIS Tested 100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications
TO220F Top View
Bottom View
G
D
D
G
S S
D
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOTF296L
TO-220F
Tube
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage
Symbol VDS
Gate-Source Voltage
VGS TC=25°C
Continuous Drain Current Pulsed Drain Current
Avalanche Current
C
Avalanche energy VDS Spike
L=0.1mH
C
10µs TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case
Rev.1.0: March 2015
IAS
40
A
EAS
80
mJ
120
V
36.5 2.2
Steady-State
W
1.4
TJ, TSTG
Symbol Steady-State
W
18
PDSM
t ≤ 10s
A
8
PD
Junction and Storage Temperature Range
A
10
VSPIKE
TA=25°C
V
160
IDSM
TA=70°C
±20 29
IDM TA=25°C
Continuous Drain Current
Units V
41
ID
TC=100°C C
Maximum 100
RθJA RθJC
-55 to 175
Typ 10 45 3.4
www.aosmd.com
°C
Max 15 55 4.1
Units °C/W °C/W °C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS
Conditions
Min
ID=250µA, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
2.3 TJ=125°C
VGS=6V, ID=20A gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
µA
5
VGS=10V, ID=20A
VDS=5V, ID=20A
Units
1 TJ=55°C
Static Drain-Source On-Resistance
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
0.25
±100
nA
2.9
3.4
V
8.2
10
14.2
17.2
9.7
12.5
mΩ
1
V
41
A
62 0.7
mΩ
S
2785
pF
238
pF
12
pF
0.55
0.85
37
52
Ω nC
11.5
nC
Qgd
Gate Drain Charge
5
nC
tD(on)
Turn-On DelayTime
13
ns
tr
Turn-On Rise Time
8.5
ns
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=50V, RL=2Ω, RGEN=3Ω
29
ns
4
ns
IF=20A, dI/dt=500A/µs
35
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
210
ns nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: March 2015
www.aosmd.com
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V
100
6V
VDS=5V
80
80 5V
60 ID(A)
ID (A)
60
40
40
125°C
4.5V 20
20
25°C
VGS=4V 0
0 0
1
2
3
4
2
5
3
4
5
6
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Figure 1: On-Region Characteristics (Note E) 14
2.4 Normalized On-Resistance
2.2 12 RDS(ON) (mΩ)
VGS=6V 10
8 VGS=10V 6
VGS=10V ID=20A
2 1.8 1.6 1.4
VGS=6V ID=20A
1.2 1 0.8
4 0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 24
1.0E+02 ID=20A 1.0E+01 125°C
1.0E+00
125°C
16
IS (A)
RDS(ON) (mΩ)
20
12
1.0E-01 25°C
1.0E-02 8 1.0E-03
25°C 4
1.0E-04
0
1.0E-05 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.1.0: March 2015
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
3500 VDS=50V ID=20A
Ciss
3000 Capacitance (pF)
VGS (Volts)
8
6
4
2500 2000 1500 1000
2
Coss
500 Crss 0
0 0
10
20
30
40
50
0
20
Qg (nC) Figure 7: Gate-Charge Characteristics
60
80
100
VDS (Volts) Figure 8: Capacitance Characteristics
500
1000.0
TJ(Max)=175°C TC=25°C
10µs 10µs
100.0
RDS(ON) limited
10.0
400
100µs
Power (W)
ID (Amps)
40
1ms 10ms
1.0
0.0 0.01
200
DC
TJ(Max)=175°C TC=25°C
0.1
300
100
0.1
1 10 100 1000 VDS (Volts) VGS> or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0 0.0001 0.001 0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4.1°C/W
1
PDM
0.1 Single Pulse
Ton T
0.01 1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: March 2015
www.aosmd.com
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C TA=100°C
100 TA=150°C TA=125°C
40
30
20
10
0
10 1
10
100
0
1000
25
50
75
100
125
150
175
TCASE (°C) Figure 13: Power De-rating (Note F)
Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 10000
60
TA=25°C 50
Power (W)
Current rating ID(A)
1000 40 30 20
100
10 10 0 0
25
50
75
100
125
150
175
1 1E-05
ZθJA Normalized Transient Thermal Resistance
TCASE (°C) Figure 14: Current De-rating (Note F)
0.001
0.1
10
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1 PDM
0.01
Single Pulse Ton
0.001 0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: March 2015
www.aosmd.com
Page 5 of 6
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev.1.0: March 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6
