Transcript
AOTF409 P-Channel Enhancement Mode Field Effect Transistor General Description
Features
The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load applications.AOTF409 and AOTF409L are electrically identical.
ID = -24A
(VGS = -10V)
RDS(ON) < 40mΩ
(VGS = -10V)
RDS(ON) < 54mΩ
(VGS = -4.5V)
VDS (V) =-60V
- RoHS Compliant - AOTF409L Halogen Free
100% UIS Tested!
TO-220FL
D
G S
G D S
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C
Continuous Drain Current G Pulsed Drain Current
IDM
TA=25°C
Continuous Drain Current Avalanche Current
ID
TC=100°C C
C
Repetitive avalanche energy L=0.1mH
C
TC=25°C Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd.
V
-17
A
A
-4.3
IAR
-37
A
EAR
68
mJ
43 2.16
W
1.38
TJ, TSTG
-55 to 175
Symbol t ≤ 10s Steady-State Steady-State
W
21
PDSM
Junction and Storage Temperature Range
±20 -24 -60
PD
TA=25°C
Units V
-5.4
IDSM
TA=70°C
Maximum -60
RθJA RθJC
Typ 10 48.5 2.9
°C
Max 12 58 3.5
Units °C/W °C/W °C/W
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AOTF409
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-60 -1 TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-60
VGS=-10V, ID=-20A TJ=125°C
Static Drain-Source On-Resistance VGS=-4.5V, ID=-20A
gFS
Forward Transconductance
VSD
IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
IS
VDS=-5V, ID=-20A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-30V, ID=-20A
Qrr
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
Units
µA
±100
nA
-2.1
-2.4
V
33
40
52.4
63
43
54
A
33 -0.73
mΩ mΩ S
-1
V
-30
A
1969
2461
2953
pF
125
178
231
pF
72
120
168
pF
1
2
4.0
Ω
34
43
52
nC
16
19.7
24
nC
8
10.2
12
nC
5
8.9
12.5
nC
VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω IF=-20A, dI/dt=500A/µs
trr
Max
V
VDS=-60V, VGS=0V
IGSS
RDS(ON)
Typ
12
ns
14.5
ns
38
ns
15
ns
18
25.68
33
117
167.12
217
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
Rev 0 : Aug-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOTF409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60
30
-10V
-6V
-5V
50
-4.5V
20
-4V -ID(A)
-ID (A)
40 30 20
15 10
VGS=-3.5V
10
VDS=-5V
25
125°C
5
VGS=-3V
25°C
0
0 0
1
2
3
4
0
5
50 VGS=-4.5V
Normalized On-Resistance
RDS(ON) (mΩ)
2
3
4
5
2
45 40 35 30
VGS=-10V
25
1.8
VGS=-10V ID=-20A
1.6
17 5 2 10 VGS=-4.5V
1.4 1.2
ID=-20A
1 0.8
20 0
5
10
15
0
20
25
50
75
100
125
150
175
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
1.0E+01
100 ID=-20A
90
1.0E+00
80
40
70
1.0E-01
60
IS (A)
RDS(ON) (mΩ)
1
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
125°C
125°C 1.0E-02
50
25°C
1.0E-03
40 25°C
30
1.0E-04
20 2
4
6
8
10
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Alpha & Omega Semiconductor, Ltd.
1.0E-05 0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOTF409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500
10
Capacitance (pF)
-VGS (Volts)
3000
VDS=30V ID=20A
8 6 4 2
Ciss
2500 2000 1500 1000
Coss
500
0
0 0
10
20
30
40
50
0
Crss 10
-Qg (nC) Figure 7: Gate-Charge Characteristics
100.0
RDS(ON) limited
10µs
10µs
200
100µs
160
10ms
1.0
TJ(Max)=175°C TC=25°C
0.0 0.01
0.1
1
ZθJC Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
50
60
17 5 2 10
120 80 40
10
0 1E-04 0.001
100
-VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10
40
TJ(Max)=175°C TC=25°C
1ms DC
0.1
30
-VDS (Volts) Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
10.0
20
0.01
0.1
1
10
100
0
1000
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.5°C/W
0.1 0.01
PD
0.001 0.0001 0.000001
Ton Single Pulse 0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOTF409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Power Dissipation (W)
-IAR(A) Peak Avalanche Current
50 120 100 TA=25°C
TA=100°C
80 60 40 20
TA=150°C
40 30 20 10
TA=125°C 0
0 0.000001
0
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
25
50
75
100
150
175
10000
30 25
TA=25°C
1000 20
Power (W)
Current rating -ID(A)
125
TCASE (°C) Figure 13: Power De-rating (Note F)
15 10
17 5 2 10
100
10 5
1
0 0
25
50
75
100
125
150
175
ZθJA Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
0
0
0
0.01
0.1
1
10
100 1000 0
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C) Figure 14: Current De-rating (Note F)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=58°C/W
0.1 PD
0.01
Single Pulse Ton
0.001 0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOTF409
Gate Charge Test Circuit & Waveform Vgs Qg -10V
+
VDC
-
Qgs
Vds
Qgd
+
VDC
DUT Vgs
Ig Charge
Resistive Switching Test Circuit & Waveforms RL
Vds
toff
t on td(on)
Vgs VDC
Rg
-
DUT
Vgs
t d(off)
tr
tf
90%
Vdd
+
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms 2
L
E AR= 1/2 LIAR
Vds
Vds
Id VDC
-
Vgs
Vgs
+
Rg
BVDSS
Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & W aveform s Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
Vgs
L
-Isd
+ Vdd
VD C
-
-I F
t rr
dI/dt -I RM
Vdd
-Vds
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