Transcript
AOTF454L 150V N-Channel MOSFET
General Description
Product Summary
The AOTF454L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS
150V 13A
ID (at VGS=10V) RDS(ON) (at VGS=10V)
< 94mΩ
RDS(ON) (at VGS=7V)
< 110mΩ
100% UIS Tested 100% Rg Tested
TO220F Top View
D
Bottom View
G
D
G
S S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C
Continuous Drain Current Pulsed Drain Current Continuous Drain Current
C
Avalanche Current C
IAS, IAR
Avalanche energy L=0.1mH C
EAS, EAR
TC=25°C Power Dissipation B
TA=25°C Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case
Rev 0: February 2011
Steady-State Steady-State
5
A
1.3
mJ
41
W
16 2.1
RθJA RθJC
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W
1.3 -55 to 150
TJ, TSTG
Symbol t ≤ 10s
A
2.5
PDSM
TA=70°C
A
3
PD
TC=100°C
V
40
IDSM
TA=70°C
±20 8
IDM TA=25°C
Units V
13
ID
TC=100°C
Maximum 150
Typ 10 48.5 2.4
°C
Max 12 58 3
Units °C/W °C/W °C/W
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AOTF454L
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V VDS=150V, VGS=0V
150 5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage On state drain current
VDS=VGS ID=250µA
3.4
VGS=10V, VDS=5V
40
VGS=10V, ID=10A TJ=125°C VGS=7V, ID=10A gFS
Forward Transconductance
VSD
Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=10A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge
VGS=0V, VDS=75V, f=1MHz VGS=0V, VDS=0V, f=1MHz
Units V
TJ=55°C
Static Drain-Source On-Resistance
Max
1
VGS(th) ID(ON) RDS(ON)
Typ
µA
±100
nA
4
4.6
V
75.5
94
151
188
84
110
mΩ
1
V
45
A
A
20 0.72
mΩ
S
655
820
985
pF
50
70
90
pF
13
22
31
pF
0.7
1.4
2.1
Ω
10
15
20
nC
VGS=10V, VDS=75V, ID=10A
4
nC
Qgd
Gate Drain Charge
4.4
nC
tD(on)
Turn-On DelayTime
10.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
20
32.5
45
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
160
230
300
VGS=10V, VDS=75V, RL=7.5Ω, RGEN=3Ω
5.5
ns
14.5
ns
3
ns ns nC
2
A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2011
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AOTF454L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20
30 10V
VDS=5V 7V
25
6.5V
15 ID(A)
ID (A)
20 15
10
6V
10
5 5
125°C 25°C
VGS=5.5V
0
0 0
1
2
3
4
5
2
3
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
6
7
8
Normalized On-Resistance
2.4
100 RDS(ON) (mΩ)
5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
110
90
VGS=7V
80 70
VGS=10V
60
2.2 VGS=10V ID=10A
2 1.8
17 5 2 VGS=7V 10
1.6 1.4 1.2
ID=10A
1 0.8
0
5
10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
190
1.0E+02 ID=10A
170
1.0E+01
40
150
1.0E+00
125°C
130
IS (A)
RDS(ON) (mΩ)
4
110
125°C
1.0E-01
25°C
1.0E-02
90
25°C 1.0E-03
70 50
1.0E-04 4
5
6
7
8
9
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: February 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOTF454L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
1200
VDS=75V ID=10A
1000 Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss 800 600 400 Coss 200
0
Crss
0 0
3
6
9
12
15
Qg (nC) Figure 7: Gate-Charge Characteristics
0
100.0
15
30
45
60 75 90 105 120 135 150 VDS (Volts) Figure 8: Capacitance Characteristics
500 10µs 10µs
1.0
RDS(ON) limited
1ms 10ms DC
TJ(Max)=150°C TC=25°C
0.1
0.0 0.01
0.1
400
100µs Power (W)
ID (Amps)
10.0
ZθJC Normalized Transient Thermal Resistance
1
17 5 2 10
200 100
1 10 VDS (Volts)
100
1000
0 0.0001
0.001
0.01
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
1
0
10
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3°C/W
PD
0.1
Ton
Single Pulse
0.01 0.00001
0.1
Pulse Width (s) Figure 10: Single Pulse Power Rating 18 Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
10
TJ(Max)=150°C TC=25°C
300
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2011
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AOTF454L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
60
IAR (A) Peak Avalanche Current
TA=25°C
A
TA=150°C
Power Dissipation (W)
T =100°C
TA=125°C
1
40 30 20 10 0
1
10 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C)
100
0
25
50
75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F)
150
500
20
TA=25°C
400 Power (W)
15
Current rating ID(A)
50
10
17 5 2 10
300 200
5
100 0 0
ZθJA Normalized Transient Thermal Resistance
10
1
25
50
75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F)
150
0 0 Pulse0.1 Width (s) 1018 0.00001 0.001 1000 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=58°C/W
0.1 PD
0.01
0.001 0.0001
Single Pulse
0.001
0.01
Ton
0.1
1
T
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: February 2011
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AOTF454L
Gate Charge Test Circuit & W aveform Vgs Qg 10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs Ig Charge
Resistive Switching Test Circuit & W aveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev 0: February 2011
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt I RM
Vdd
Vds
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