Transcript
AOY2N60 600V,2A N-Channel MOSFET
General Description
Product Summary
• Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant
VDS @ Tj,max
Applications
700V
ID (at VGS=10V)
2A
RDS(ON) (at VGS=10V)
< 4.7Ω
100% UIS Tested 100% Rg Tested
• General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom TO251B D Bottom View
Top View
D
G
D
G
G
S S
D
S
AOY2N60
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOY2N60
TO-251B
Tube
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage
VGS TC=25°C
Continuous Drain B Current
TC=100°C
Pulsed Drain Current Avalanche Current
C
Repetitive avalanche energy
C,I
Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G
ID
±30
V
1.4
A
6
IAR
4.6
A
EAR
10.6
mJ
EAS dv/dt
97 5 57
mJ V/ns W
0.45 -50 to 150
W/ oC °C
300
°C
PD TJ, TSTG TL
Maximum Case-to-sink A
Symbol RθJA RθCS
Maximum Junction-to-CaseD,F
RθJC
Rev.1.0: May 2014
Units V
2
IDM
C,I
Maximum 600
Typical 40
Maximum 50
Units °C/W
1.8
0.5 2.2
°C/W °C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS BVDSS
Drain-Source Breakdown Voltage
BVDSS /∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.7
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100 3.4
µA
4
4.5
nΑ V
4.7
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1A
3.9
gFS
Forward Transconductance
VDS=40V, ID=1A
2.8
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.79
IS
Maximum Body-Diode Continuous Current
2
A
ISM
Maximum Body-Diode Pulsed Current C
6
A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
S
295 VGS=0V, VDS=25V, f=1MHz f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge
pF
2.3
pF
3.2
Ω
6.5 VGS=10V, VDS=480V, ID=2A
pF
30
11
nC
Qgs
Gate Source Charge
1.5
nC
Qgd
Gate Drain Charge
1.8
nC
tD(on)
Turn-On DelayTime
16
ns
tr
Turn-On Rise Time
11
ns
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=300V, ID=2A, RG=25Ω
28
ns
14
ns
IF=2A,dI/dt=100A/µs,VDS=100V
268
Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V
1.6
ns µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=1.8A, VDD=150V, RG=10Ω, Starting TJ=25°C. I. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2014
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5
10 -55°C
VDS=40V
7V 4
3 6V
ID(A)
ID (A)
10V
1
VDS 2
125°C
5.5V
25°C
1 VGS=5V 0
0.1 0
5
10
15
20
25
30
2
4
8
10
3 Normalized On-Resistance
10
8 RDS(ON) (Ω)
6
VGS(Volts) Figure 2: Transfer Characteristics
VDS (Volts) Fig 1: On-Region Characteristics
VGS=10V
6
4
2
1
2
3
4
2
VGS=10V ID=1A
1.5 1 0.5 0 -100
0 0
2.5
5
-50
0
50
100
150
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
1.2
1E+01
1E+00
40
1.1
125°C 1
IS (A)
BVDSS (Normalized)
ID=30A
125°
1E-01
25°C
1E-02 0.9 1E-03
25°
0.8 -100
1E-04 -50
0
50
100
150
200
TJ (oC) Figure 5: Break Down vs. Junction Temperature
Rev.1.0: May 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
1000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=480V ID=2A
12
9
6
100
Coss
VDS 10 Crss
3
0
1 0
2
4
6
8
10
0.1
1
Qg (nC) Figure 7: Gate-Charge Characteristics
10
VDS (Volts) Figure 8: Capacitance Characteristics
10
800 10µs
TJ(Max)=150°C TC=25°C
RDS(ON) limited
600
100µs
1
1ms
DC
10ms
0.1
Power (W)
ID (Amps)
100
400
200 TJ(Max)=150°C TC=25°C 0 0.0001
0.01 1
10
100
1000
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
ZθJC Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.2°C/W 1
PD
0.1 Single Pulse
Ton T 0.01 1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: May 2014
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75
2.5
60
2.0 Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
45
1.5
VDS
30
15
1.0
0.5
0 0
25
50
75
100
125
150
0.0 0
TCASE (°C) Figure 12: Power De-rating (Note B)
25
50
75
100
125
150
TCASE (°C) Figure 13: Current De-rating (Note B)
400 TJ(Max)=150°C TA=25°C
Power (W)
300
200
100
0 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
ZθJA Normalized Transient Thermal Resistance
10
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W
0.1
PD
0.01
Single Pulse Ton
0.001 0.0001
0.001
0.01
0.1
1
10
T 100
1000
Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev.1.0: May 2014
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Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ +
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs Ig Charge
Res istive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
+ VDC
90% Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR Id
DUT Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt
Vds + DUT Vgs Vds -
Isd Vgs
Ig
Rev.1.0: May 2014
L
Isd
+ Vdd
trr
dI/dt IRM
Vdd
VDC
-
IF
Vds
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