Transcript
APH669 81-86 GHz Medium Power Amplifier Preliminary Datasheet
Revision: February 2015
Applications FCC E-band Communication Systems @ 81-86 GHz Frequency Band Short Haul / High Capacity Links Enterprise Wireless LAN Wireless Fiber Replacement
X=2800 mm Y=1490 mm
Product Features
Product Description
RF Frequency: 81 to 86 GHz
The APH669 is a Gallium Arsenide-based
Linear Gain: 16 dB typ.
broadband, three-stage power amplifier
Psat: 23.5 dBm typ.
device, designed for use in commercial
Die Size: 4.17 sq. mm.
digital radios and wireless LANs. To ensure
2 mil substrate
rugged and reliable operation, GaAs pHEMT devices are fully passivated. Both bond pad
DC Power: 4 VDC @ 305 mA
and backside metallization are Ti/Au, which is compatible with conventional die attach,
thermocompression, and thermosonic wire bonding assembly techniques. Performance Characteristics (Ta = 25°C) Specification
Max
Unit
86 16 10 11 20 23.5 13 4
GHz dB dB dB dBm dBm % V
Vg1
0.02
V
Vg2
0.02
V
Id1
135
mA
Id2
180
mA
Frequency Linear Gain Input Return Loss Output Return Loss P1dB Psat Max PAE% Vd1, Vd2
Min 81 15 6 8 22.5
Typ
Absolute Maximum Ratings (Ta = 25°C) Parameter Vd1, Vd2 Vg1 Vg2 Id1 Id2 Input drive level Assy. Temperature (60 seconds)
Min -0.8 -0.8
Max
Unit
4 0.3 0.3 150 200 16 300
V V V mA mA dBm deg. C
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail:
[email protected]
Page 1
APH669 81-86 GHz Medium Power Amplifier Preliminary Datasheet
Revision: February 2015
Measured (On-Wafer) Performance Characteristics (Typical Performance at 25°C) Vd = 4V, Id1 = 135 mA, Id2 = 180 mA Linear Gain vs. Frequency
Output Power, Gain, PAE% vs. Frequency *
22 20 Psat (dBm), Gain (dB), PAE%
18 16
Gain (dB)
14 12
10 8 6 4 2 0
28 26 24 22 20 18 16 14 12 10 8 6 4 2 0
72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88
77
Frequency (GHz)
79
80
81
82
83
84
85
86
87
Output Return Loss vs. Frequency
Output Return Loss (dB)
Input Return Loss (dB)
78
P1dB (dBm) Psat (dBm)
Frequency (GHz)
Input Return Loss vs. Frequency 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30
Gain SS (dB) P3dB (dBm) Max PAE%
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30
72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88
72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88
Frequency (GHz)
Frequency (GHz)
* Pulsed-Power On-Wafer Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail:
[email protected]
Page 2
APH669 81-86 GHz Medium Power Amplifier Preliminary Datasheet
Revision: February 2015
Measured (On-Wafer) Performance Characteristics (Typical Performance at 25°C) Vd = 4V, Id1+Id1a = 270 mA, Id2+Id2a = 360 mA
30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15
78 GHz 81 GHz 84 GHz
79 GHz 82 GHz 85 GHz
PAE% vs. Pin *
80 GHz 83 GHz 86 GHz
PAE%
Pout (dBm)
Pout vs. Pin *
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Pin (dBm)
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0
78 GHz 81 GHz 84 GHz
79 GHz 82 GHz 85 GHz
80 GHz 83 GHz 86 GHz
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Pin (dBm)
* Pulsed-Power On-Wafer Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail:
[email protected]
Page 3
APH669 81-86 GHz Medium Power Amplifier Preliminary Datasheet
Revision: February 2015
Measured (On-Wafer) Performance Characteristics (Typical Performance at 25°C) Vd = 4V, Id1 = 135 mA, Id2 = 180 mA Freq GHz
S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
78.0 78.5 79.0 79.5 80.0 80.5 81.0 81.5 82.0 82.5 83.0 83.5 84.0 84.5 85.0 85.5 86.0 86.5 87.0 87.5 88.0 88.5 89.0 89.5 90.0 90.5 91.0 91.5 92.0 92.5 93.0 93.5 94.0 94.5 95.0 95.5 96.0
0.459 0.400 0.365 0.341 0.328 0.322 0.318 0.306 0.292 0.279 0.277 0.282 0.299 0.311 0.323 0.339 0.347 0.359 0.385 0.415 0.429 0.442 0.468 0.491 0.509 0.527 0.542 0.554 0.565 0.575 0.588 0.596 0.599 0.603 0.608 0.612 0.614
-14.274 -22.544 -31.374 -39.445 -48.508 -54.418 -60.945 -69.567 -80.787 -89.759 -99.409 -108.126 -117.702 -128.277 -136.992 -146.233 -155.073 -161.729 -167.500 -175.037 177.994 171.986 165.995 160.025 154.380 149.249 144.111 138.253 133.153 128.283 123.711 119.497 115.272 111.421 107.563 103.963 100.148
7.412 7.257 7.147 7.084 6.945 6.856 6.831 6.816 6.703 6.649 6.691 6.689 6.704 6.684 6.702 6.662 6.638 6.609 6.545 6.511 6.423 6.344 6.243 6.051 5.854 5.584 5.280 4.913 4.501 4.080 3.660 3.261 2.881 2.546 2.246 1.981 1.751
-72.163 -84.655 -96.334 -108.331 -120.143 -130.964 -141.873 -153.485 -165.314 -176.297 171.950 160.051 147.441 135.817 123.687 111.431 99.413 87.044 73.957 60.499 46.956 33.257 18.477 3.382 -11.245 -26.393 -41.770 -56.865 -71.450 -85.920 -99.845 -113.104 -125.672 -137.682 -149.258 -160.112 -170.732
0.009 0.009 0.010 0.008 0.009 0.008 0.007 0.007 0.006 0.006 0.006 0.005 0.005 0.004 0.004 0.004 0.003 0.002 0.002 0.003 0.002 0.001 0.001 0.001 0.001 0.000 0.001 0.002 0.001 0.001 0.002 0.002 0.002 0.001 0.002 0.002 0.003
-47.948 -61.129 -65.854 -81.280 -90.170 -96.751 -101.162 -100.561 -107.765 -113.624 -123.470 -119.126 -130.499 -141.326 -139.469 -146.339 -150.262 -139.199 -152.400 -143.607 -145.965 -132.040 -163.769 -146.942 -102.200 -112.630 -83.437 -161.650 -97.439 -128.857 -135.403 -131.274 -140.992 -144.766 -163.231 143.593 119.290
0.302 0.310 0.316 0.313 0.308 0.298 0.292 0.286 0.283 0.277 0.275 0.273 0.268 0.266 0.262 0.263 0.265 0.266 0.271 0.273 0.279 0.290 0.302 0.315 0.337 0.356 0.374 0.393 0.409 0.431 0.447 0.464 0.475 0.486 0.498 0.510 0.523
-98.141 -104.682 -111.613 -118.855 -125.986 -131.624 -136.913 -141.929 -146.580 -152.328 -157.391 -162.911 -168.005 -173.958 179.923 174.859 167.939 159.894 152.160 143.589 134.765 124.971 114.651 104.014 92.243 79.633 66.872 55.378 43.910 33.081 23.107 13.822 5.005 -2.759 -9.738 -16.213 -22.422
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail:
[email protected]
Page 4
APH669 81-86 GHz Medium Power Amplifier Preliminary Datasheet Die Size and Bond Pad Locations (Not to Scale)
Revision: February 2015
X = 2800 µm 25 µm Y = 1490 25 µm DC Bond Pad = 100 x 100 0.5 µm RF Bond Pad = 50 x 50 0.5 µm Chip Thickness = 50 5 µm
2163µm 1563 µm
VD2
GND
GND
VG2
GND
VD1
GND
VG1
1163 µm 763 µm
1490 µm GND
GND
RFIN
RFOUT
GND
GND
413 µm
412µm
2800 µm
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail:
[email protected]
Page 5
Approved for Public Release: Northrop Grumman Case 13-xxxx, 05/xx/13
APH669 81-86 GHz Medium Power Amplifier Preliminary Datasheet
Revision: February 2015
Suggested Bonding Arrangement
= 0.1uF, 15V (Shunt) = 10 Ohms, 30V (Series) = 100 pF, 15V (Shunt) VD1
VG2 VD2
RF Output
VD2
GND
GND
VG2
GND
VD1
VG1
RF Input
GND
VG1
RF IN GND
RFIN GND
Substrate
GND
RFOUT GND
Substrate
Recommended Assembly Notes 1. Bypass caps should be 100 pF ceramic (single-layer) placed no further than 30 mils from the amplifier. 2. Best performance obtained from use of <6 mil (long) by 1.5 by 0.5 mil ribbons on input and output.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail:
[email protected]
Page 6
Approved for Public Release: Northrop Grumman Case 15-0225, 02/12/15
