Transcript
ASA306B
ASA306B Data Sheet Gain Adjustable Trans-impedance Amplifier MMIC
1. Product Overview 1.1 General Description ASA306B, a trans-impedance amplifier (TIA) with voltage controlled attenuator, has a high linearity and low noise over a wide range of frequency up to 1 GHz, being suitable for use in the FTTH, optical receiver, distribution amplifiers, and drop-in amplifiers of CATV systems. The amplifier is available in a QFN24 plastic encapsulated package and passes through the stringent DC, RF, and reliability tests.
2.1 Features Operating Frequency at 50 ~ 1000 MHz Optical Input from -10 dBm to +2 dBm Trans-impedance Gain Adjustable from 18 dB to 38 dB @ Vctrl = 4.3 ~ 1.5 V Gain Flatness: ±0.5 dB over Vctrl = 1.5 ~ 4.3 V Output Power: 88 ~ 92 dBV @ CENELEC-42, 88 dBV @ PAL-98 Single +5 V, 270 mA
3.1 Applications FTTH Optical Receiver Distribution Amplifier Drop-in Amplifier
4.1 Package Profile & RoHS Compliance
QFN24, 4x4 mm2, surface mount
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RoHS-compliant
June 2013
ASA306B 2. Summary on Product Performances 2.1 Typical Performance VDD = +5 V, TA = +25 C, ZO = 75 Parameters
Test Conditions
Min
Gain Max
50 ~ 1000 MHz, Vctrl = 0 ~ 1.5 V
38
Gain Adjustable Range
Over Vctrl = 1.5 ~ 4.3 V
20
Gain Flatness
Over Vctrl = 1.5 ~ 4.3 V @ 50 ~ 1000 MHz
0.5
Output Return Loss
50 ~ 1000 MHz, over Vctrl = 1.5 ~ 4.3 V
EIN
50 ~ 1000 MHz, Vctrl = 1.5 V
CN1), 2), 3)
Optical Input = +2 dBm1), 2), 3)
531), 552), 553)
dBc
Optical Input = -8 dBm1), 3), -10 dBm2)
631), 682), 653)
dBc
Optical Input = +2 dBm1), 2), 3)
651), 782), 783)
dBc
Optical Input = -8 dBm1), 3), -10 dBm2)
701), 732), 713)
dBc
Optical Input = +2 dBm1), 2), 3)
691), 682), 683)
dBc
VDD = +5 V
270
CSO1), 2), 3) CTB1), 2), 3) Current Consumption
Typ
Max
Units
39
dB dB
2.8
0.7
dB
-7
dB
3.3
pA/rtHz
310
mA
1) For Pout = 85 dBV, 527.25 MHz of PAL 98 channels in the optical input range of -8 ~ +2 dBm. 2) For Pout = 88 dBV, 743.25 MHz of CENELEC 42 channels in the optical input range of -10 ~ +2 dBm. 3) For Pout = 92 dBV, 743.25 MHz of CENELEC 42 channels in the optical input range of -8 ~ +2 dBm.
2.2 Product Specification Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Min
Typ
Max
Unit
Frequency
500
MHz
Gain
38
dB
Output Return Loss
-7
dB
Current Consumption
270
mA
2.3 Application Block Diagram Attenuation Control Voltage (VCtrl)
1:1 Matching Circuit
TIA
Voltage Controlled Attenuator
Amp.
Matching Circuit
ASA306B
Vdevice
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ASA306B 2.4 Absolute Maximum Ratings Parameters
Max. Ratings
Operation Case Temperature
-40 to 85 C
Storage Temperature
-40 to 150 C
Device Voltage
+6 V
Operation Junction Temperature
+160 C
Input RF Power (CW)
+26 dBm
Maximum Current
350 mA
2.5 Thermal Resistance Symbol
Description
Typ
Unit
Rth
Thermal resistance from junction to lead
19
C/W
2.6 Pin Descriptions 24
23
22
20
18
2
17
Voltage Control Attenuator
TIA
4
16 AMP
15
5
14
6
13 7
8
9
10
(NOTE) The left schematic is the top view of QFN24 plastic package with a circled pin 1 mark and a dotted lead & metal exposed paddle on its bottom.
19
1
3
3/15
21
11
12
Pin
Pin Name
Description
Pin
Pin Name
Description
1
NC
No connection
14
AMP OUT B
AMP output B
2
TIA IN A
TIA input A
15
AMP IADJ2
AMP B current adjust
3
TIA IADJ1
TIA A current adjust
16
AMP IADJ1
AMP A current adjust
4
TIA IADJ2
TIA B current adjust
17
AMP OUT A
AMP output A
5
TIA IN B
TIA input B
18
NC
No connection
6
NC
No connection
19
AMP IN A
AMP input A
7
TIA OUT B
TIA output B
20
VCA OUT B
VCA output B
8
VCA IN B
VCA input B
21
NC
No connection
9
NC
No connection
22
NC
No connection
10
Vctrl
Gain control voltage
23
VCA IN A
VCA input A
11
VCA OUT B
VCA output B
24
TIA OUT A
TIA output A
12
AMP IN B
AMP input B
25
Paddle
RF & DC Ground
13
NC
No connection
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ASA306B 3. Application: 50 ~ 1000 MHz 3.1 Test Circuit & Evaluation Board Zin = 300 Zout = 75
Vdevice = +5 V R3 C4
L3 C3 R5
C6 R1
C10
R2
C5
L4
R4
C8
C7
R6
L6
L2
RF IN
L5 4:1
C1
L1
R15 R16
T2 C12
C9
C2
L7
C11
R17 R18
ASA306B
C13 L11
C21
T1
C16
R7
R8
C19
C20
R12
L10
R14
RF OUT
C23
L8
Zin
C24
1:1
L12
Zout
C22 C17
R13 C18
C14 L9
R11 R10
C15 R9
Vctrl Vdevice = +5 V
ASB Inc. http://www.asb.co.kr EB-QFN24-4X4-B8
GND
GND
Vdevice
Vdiode
RF OUT
RF IN 1:1 Transformer
4:1 Transformer
Vctrl
GND
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Vdevice
ASB Inc.
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June 2013
ASA306B Bill of Material Symbol ASA306B C5, C16 C3, C6, C7, C8, C9, C14, C17, C18, C19, C20, C21 C1, C2, C4, C11, C12, C13, C15, C23, C24 C10, C22 R4, R12 R2, R3, R8, R9 R15, R16 R17, R18
Size 1005 1005
Value 1.0 F 1.0 pF
Manufacturer ASB MURATA MURATA
1608
1.0 F
MURATA
2012 1005 1005 1005 1005
10 F 0 22 120 160
MURATA Samsung Samsung Samsung Samsung
Symbol R5, R13 R1, R7 R6, R14 R11 R10 L1, L7 L2, L5, L8, L11 L4, L10 L3, L9 L6, L12
Size 1005 1005 1005 1005 1005 1608 1005 1608 1608 2012
Value 300 510 1.2 k 3.9 k 10 k 6.8 nH 18 nH 39 nH 680 nH 1.0 H
Manufacturer Samsung Samsung Samsung Samsung MURATA MURATA MURATA MURATA MURATA MURATA
3.2 Electrical Performance Plots
Vctrl = 1.5 V
1.5
Vctrl = 1.50 V
Vctrl = 2.67 V
Vctrl = 2.89 V Vctrl = 3.02 V
35
Vctrl = 3.12 V Vctrl = 3.21 V Vctrl = 3.29 V
Gain (dB)
Vctrl = 1.50 V
Vctrl = 2.67 V
Gain flatness deviation (dB)
40
Vctrl = 3.36 V
30
Vctrl = 3.43 V Vctrl = 3.49 V Vctrl = 3.55 V Vctrl = 3.62 V Vctrl = 3.68 V
25
Vctrl = 3.75 V Vctrl = 3.81 V Vctrl = 3.88 V Vctrl = 3.94 V
20
Vctrl = 4.01 V Vctrl = 4.08 V
Vctrl = 4.24 V
Vctrl = 4.16 V
Vctrl = 2.89 V
1
Vctrl = 3.02 V Vctrl = 3.12 V Vctrl = 3.21 V Vctrl = 3.29 V
0.5
Vctrl = 3.36 V Vctrl = 3.43 V Vctrl = 3.49 V Vctrl = 3.55 V
0
Vctrl = 3.62 V Vctrl = 3.68 V Vctrl = 3.75 V
Vctrl = 1.5 V
-0.5
Vctrl = 3.81 V
Vctrl = 4.24 V
Vctrl = 3.88 V Vctrl = 3.94 V Vctrl = 4.01 V
-1
Vctrl = 4.08 V Vctrl = 4.16 V Vctrl = 4.24 V
Vctrl = 4.24 V
-1.5
15 0
200
400 600 800 Frequency (MHz)
1000
0
0
1200
400 600 800 Frequency (MHz)
1000
1200
25
Vctrl = 1.50 V
Vctrl = 1.5 V
200
Vctrl = 2.67 V Vctrl = 2.89 V Vctrl = 3.02 V
20
Vctrl = 3.12 V
-10
Attenuation (dB)
Vctrl = 3.21 V Vctrl = 3.29 V
S22 (dB)
Vctrl = 3.36 V Vctrl = 3.43 V Vctrl = 3.49 V Vctrl = 3.55 V
-20
Vctrl = 3.62 V Vctrl = 3.68 V Vctrl = 3.75 V Vctrl = 3.81 V Vctrl = 3.88 V
-30
Vctrl = 4.24 V
15 10
@ 500 MHz
Vctrl = 3.94 V
5
Vctrl = 4.01 V Vctrl = 4.08 V Vctrl = 4.16 V Vctrl = 4.24 V
-40
0 0
2.
5/15
Gain
200
400 600 800 Frequency (MHz)
1000
1200
1
1.
ASB Inc.
2
Gain Flatness with Vc
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3 Vctrl (V)
4
5
June 2013
ASA306B
5
EIN (pA/rtHz)
5.4 Equivalent Input Noise @ 25 ℃ 3 2 1 0 0
200
400 600 800 Frequency (MHz)
1000
1200
(Intentionally Blanked)
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ASA306B 3.3 Application Circuit & Evaluation Board (with Photodiode) Zin = 300 Zout = 75
Vdevice = +5 V R3 C4
L3 C3 R5
C6 R1
C10
R2
C5
R4
Vdiode C7
C25
L4
C8
R6
L6
L2 L5 L13
C1
L1
R15 R16 C12
L14
L7
C9
C2
C11
ASA306B
C13 L11
T1
C16
R7
R8
C19
C20
R12
L10
R14
RF OUT
C23
C21
L8
Zin
C24
1:1
R17 R18
L12
Zout
C22 C17
R13 C18
C14 L9
R11 R10
C15 R9
Vctrl Vdevice = +5 V
ASB Inc. http://www.asb.co.kr EB-QFN24-4X4-B8
RF IN
GND
GND
Vdevice
Vdiode
RF OUT
Cathode
1:1 Transformer
Anode
Photodiode
Vctrl
GND
7/15
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Vdevice
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June 2013
ASA306B Bill of Material Symbol ASA306B C5, C16 C3, C6, C7, C8, C9, C14, C17, C18, C19, C20, C21 C1, C2, C4, C11, C12, C13, C15, C23, C24, C25 C10, C22 R4, R12 R2, R3, R8, R9 R15, R16 R17, R18
Size 1005 1005
Value 1.0 F 1.0 pF
Manufacturer ASB MURATA MURATA
1608
1.0 F
MURATA
2012 1005 1005 1005 1005
10 F 0 22 120 160
MURATA Samsung Samsung Samsung Samsung
Symbol R5, R13 R1, R7 R6, R14 R11 R10 L1, L7 L2, L5, L8, L11 L4, L10 L3, L9, L13, L14 L6, L12
Size 1005 1005 1005 1005 1005 1608 1005 1608 1608 2012
Value 300 510 1.2 k 3.9 k 10 k 6.8 nH 18 nH 39 nH 680 nH 1.0 H
Manufacturer Samsung Samsung Samsung Samsung MURATA MURATA MURATA MURATA MURATA MURATA
(Intentionally Blanked)
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June 2013
ASA306B 4. Application: 50 ~ 1000 MHz (Better Return Loss) 4.1 Test Circuit & Evaluation Board Zin = 300 Zout = 75
Vdevice = +5 V R3 C4
L3 C3 R5
C6 R1
C10
R2
C5
L4
R4
C8
C7
R6
RF Equalizer
L6
L2
RF IN
L5 C1
4:1
L1
C2 R15 R16
T2 C12
L7
C9 R17 R18
ASA306B
C13 L11
C21
L13 C11 C28
C16
R7
R8
C19
C20
R12
L10
T1
C26 R19
R20 R21
RF OUT
C23 L14
L8
Zin
C25
C24
1:1
R14
L12
Zout
C22 C17
R13 C18
C14 L9
R11 R10
C15 R9
Vctrl Vdevice = +5 V
ASB Inc. http://www.asb.co.kr EB-QFN24-4X4-B8
GND
Vdevice
GND
Vdiode
RF OUT
RF IN 1:1 Transformer
4:1 Transformer
Vctrl GND
Vdevice DD
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June 2013
ASA306B Bill of Material Symbol ASA306B C5, C16, C28 C25 C3, C6, C7, C8, C9, C14, C17, C18, C19, C20, C21
Size 1005 1005 1005
Value 1.0 pF 2.4 pF 1.0 F
Manufacturer ASB MURATA MURATA MURATA
C1, C2, C4, C11, C12, C13, C15, C23, C24, C26 C10, C24 R4, R12 R19, R20 R2, R8 R3, R9 R15, R16 R17, R18
1608
1.0 pF
MURATA
2012 1005 1005 1005 1005 1005 1005
10 F 10 F 0 12 16 22 120
MURATA Samsung Samsung Samsung Samsung Samsung Samsung
Symbol R5, R13 R21 R1, R7 R6, R14 R11 R10 L13 L1, L7 L14 L2, L5, L8, L11 L4, L10 L3, L9 L6, L12
Size 1005 1005 1005 1005 1005 1005 1005 1608 1005 1005 1608 1608 2012
Value 300 330 430 1.5 k 3.9 k 10 k 3.9 nH 6.8 nH 15 nH 18 nH 39 nH 680 nH 1.0 H
Manufacturer Samsung Samsung Samsung Samsung Samsung Samsung MURATA MURATA MURATA MURATA MURATA MURATA MURATA
4.2 Electrical Performance Plots
40
Vctrl = 2.94 V
Gain
9.
Gain flatness deviation (dB)
8.
1.5
Vctrl = 1.50 V
Vctrl = 1.50 V
Vctrl = 3.15 V Vctrl = 3.29 V
35
Vctrl = 3.39 V Vctrl = 3.48 V
Gain (dB)
Vctrl = 3.55 V
30
Vctrl = 3.62 V Vctrl = 3.69 V Vctrl = 3.75 V Vctrl = 3.81 V
25
Vctrl = 3.87 V Vctrl = 3.93 V Vctrl = 3.99 V
20
Vctrl = 4.05 V Vctrl = 4.11 V Vctrl = 4.17 V
15
Vctrl = 4.24 V
Vctrl = 4.45 V
Vctrl = 4.31 V Vctrl = 4.38 V
Vctrl = 1.50 V Vctrl = 2.94 V
Gain Flatness with Vc
Vctrl = 3.15 V
1
Vctrl = 3.29 V Vctrl = 3.39 V Vctrl = 3.48 V Vctrl = 3.55 V
0.5
Vctrl = 3.62 V Vctrl = 3.69 V Vctrl = 3.75 V
0
Vctrl = 3.81 V Vctrl = 3.87 V Vctrl = 3.93 V Vctrl = 3.99 V
-0.5
Vctrl = 4.05 V Vctrl = 4.11 V
Vctrl = 4.24 V
-1
Vctrl = 4.17 V
Vctrl = 1.5 V
Vctrl = 4.24 V Vctrl = 4.31 V Vctrl = 4.38 V
Vctrl = 4.45 V
Vctrl = 4.45 V
10 0
200
400 600 800 Frequency (MHz)
1000
0
-1.5
1200
0
200
400 600 800 Frequency (MHz)
1000
1200
25
Vctrl = 1.50 V Vctrl = 2.94 V Vctrl = 3.15 V Vctrl = 3.29 V
-10
Output Return Loss
6.
Vctrl = 3.48 V Vctrl = 3.55 V Vctrl = 3.62 V Vctrl = 3.69 V Vctrl = 3.75 V Vctrl = 3.81 V
-20
Vctrl = 3.87 V Vctrl = 3.93 V Vctrl = 3.99 V Vctrl = 4.05 V Vctrl = 4.11 V
-30
Vctrl = 4.45 V
20
Vctrl = 3.39 V
Vctrl = 4.17 V
Attenuation with Vc
Attenuation (dB)
S22 (dB)
7.
Vctrl = 1.50 V
15 10 @ 500 MHz
5
Vctrl = 4.24 V Vctrl = 4.31 V Vctrl = 4.38 V Vctrl = 4.45 V
-40
0 0
10/15
200
400 600 800 Frequency (MHz)
1000
1200
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2
3 Vctrl (V)
4
5
June 2013
ASA306B
5
EIN (pA/rtHz)
10.4 Equivalent Input Noise @ 25 ℃ 3 2 1 0 0
200
400 600 800 Frequency (MHz)
1000
1200
(Intentionally Blanked)
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June 2013
ASA306B 4.3 Application Circuit & Evaluation Board (with Photodiode) Zin = 300 Zout = 75
Vdevice = +5 V R3 C4
L3 C3 R5
C6 R1
C27
C10
R2
C5
L4
R4
Vdiode
C8
C7
R6
L6
RF Equalizer
L2 L5 L15 C1
L1
C2 R15 R16
L16
C12
L7
L13
C9
C11
R17 R18
ASA306B
C13 L11
C28
C16
R7
R8
C19
C20
R12
L10
T1
C26 R19
R20 R21
RF OUT
C23
C21
L14
L8
Zin
C25
C24
1:1
L12
R14
Zout
C22 C17
R13 C18
C14 L9
R11 R10
C15 R9
Vctrl Vdevice = +5 V
ASB Inc. http://www.asb.co.kr EB-QFN24-4X4-B8
RF IN
GND
Vdevice
GND
Vdiode
RF OUT
Cathode
1:1 Transformer
Anode
Photodiode
Vctrl GND
Vdevice DD
12/15
ASB Inc.
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June 2013
ASA306B Bill of Material Symbol ASA306B C5, C16, C28 C25 C3, C6, C7, C8, C9, C14, C17, C18, C19, C20, C21
Size 1005 1005 1005
Value 1.0 pF 2.4 pF 1.0 F
Manufacturer ASB MURATA MURATA MURATA
C1, C2, C4, C11, C12, C13, C15, C23, C24, C26, C27 C10, C24 R4, R12 R19, R20 R2, R8 R3, R9 R15, R16 R17, R18
1608
1.0 pF
MURATA
2012 1005 1005 1005 1005 1005 1005
10 F 10 F 0 12 16 22 120
MURATA Samsung Samsung Samsung Samsung Samsung Samsung
Symbol R5, R13 R21 R1, R7 R6, R14 R11 R10 L13 L1, L7 L14 L2, L5, L8, L11 L4, L10 L3, L9, L15, L16 L6, L12
Size 1005 1005 1005 1005 1005 1005 1005 1608 1005 1005 1608 1608 2012
Value 300 330 430 1.5 k 3.9 k 10 k 3.9 nH 6.8 nH 15 nH 18 nH 39 nH 680 nH 1.0 H
Manufacturer Samsung Samsung Samsung Samsung Samsung Samsung MURATA MURATA MURATA MURATA MURATA MURATA MURATA
(Intentionally Blanked)
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June 2013
ASA306B 5. Package Outline (QFN24, 4.0x4.0x1.5 mm3) Symbols A A1 A3 b D D1 E E1 e L ccc M Burr
Dimensions (In mm) MIN NOM 0.80 0 --0.18 3.95 --3.95 ----0.35 -12 ----0
0.85 0.010 0.20REF 0.23 4.00 2.60BSC 4.00 2.60BSC 0.50BSC 0.40 --0.08 --0.030
MAX 0.90 0.030 --0.28 4.03 --4.03 ----0.45 0 --0.05 0.060
6. Surface Mount Recommendation (In mm)
NOTE
1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side.
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ASA306B 7. ESD Classification & Moisture Sensitivity Level ESD Classification HBM
Class 1B
Voltage Level: 750 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.
Moisture Sensitivity Level MSL 3 at 260 C reflow
8. Recommended Soldering Reflow Profile
260 C
20~40 sec
Ramp-up (3 C/sec)
Ramp-down (6 C/sec)
200 C
150 C 60~180 sec
(End of Datasheet)
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