Transcript
BAS16L, SBAS16L Switching Diode Features
• S Prefix for Automotive and Other Applications Requiring Unique •
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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3 CATHODE
MAXIMUM RATINGS Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
100
V
Peak Forward Current
IF
200
mA
IFSM(surge)
500
mA
Repetitive Peak Forward Current (Note 3)
IFRM
1.0
A
Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t=1s
IFSM
Non−Repetitive Peak Forward Surge Current 60 Hz
1 ANODE
3
MARKING DIAGRAM
1
A 36.0 18.0 6.0 3.0 0.7
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
2
A6 M G G
SOT−23 CASE 318 STYLE 8
1
A6 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
THERMAL CHARACTERISTICS Characteristic
Symbol
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C
PD
Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
RqJA PD
1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, TJ = 25°C prior to surge.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 11
1
ORDERING INFORMATION Device
Package
Shipping†
BAS16LT1G
SOT−23 (Pb−Free)
3000/Tape & Reel
BAS16LT3G
SOT−23 (Pb−Free)
10000/Tape & Reel
SBAS16LT1G
SOT−23 (Pb−Free)
3000/Tape & Reel
SBAS16LT3G
SOT−23 (Pb−Free)
10000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Publication Order Number: BAS16LT1/D
BAS16L, SBAS16L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol
Characteristic
Min
Max
− − −
1.0 50 30
100
−
− − − −
715 855 1000 1250
Unit
OFF CHARACTERISTICS mAdc
IR
Reverse Voltage Leakage Current (VR = 100 V) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 mAdc)
V(BR)
Vdc
Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc)
VF
mV
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
−
2.0
pF
Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns)
VFR
−
1.75
Vdc
Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 W)
trr
−
6.0
ns
Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)
QS
−
45
pC
820 W +10 V
2.0 k 100 mH
tr
0.1 mF
IF
tp
t
IF trr
10%
t
0.1 mF 90%
D.U.T. 50 W OUTPUT PULSE GENERATOR
50 W INPUT SAMPLING OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR INPUT SIGNAL
OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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BAS16L, SBAS16L 10
100
150°C
IR , REVERSE CURRENT (μA)
125°C
10
85°C 55°C
1.0
25°C
-55°C -40°C
0.1
125°C 1.0 85°C 0.1 55°C 0.01 25°C
0.01 0.1
0.001 0.2
0.3
0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V)
0.9
1.0
50 20 30 40 VR, REVERSE VOLTAGE (V)
10
0
1.1
Figure 2. VF vs. IF
Figure 3. IR vs. VR
0.62 Cap
0.60 CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
150°C
0.58 0.56 0.54 0.52 0.50 0.48
0
1
2
4
3
5
VR, REVERSE VOLTAGE (V)
Figure 4. Capacitance
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6
7
8
60
70
BAS16L, SBAS16L PACKAGE DIMENSIONS
SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
D SEE VIEW C 3
HE
E
DIM A A1 b c D E e L L1 HE q
c 1
2
b
0.25
e q A L A1
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0°
MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 °
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0°
INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−−
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10°
STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE
L1 VIEW C
SOLDERING FOOTPRINT* 0.95 0.037
0.95 0.037
2.0 0.079 0.9 0.035 SCALE 10:1
0.8 0.031
mm Ǔ ǒinches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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BAS16LT1/D
