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Bas21 / A / C / S 225mw Smd Switching Diode

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BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features B E —Fast switching speed —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin(Sn) lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant —Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Min Max —Case :SOT-23 small outline plastic package A 2.80 3.00 0.110 0.118 —Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 1.20 1.40 0.047 0.055 C 0.30 0.50 0.012 0.020 —High temperature soldering guaranteed: 260°C/10s D 1.80 2.00 0.071 0.079 —Weight : 0.008gram (approximately) E 2.25 2.55 0.089 0.100 F 0.90 1.20 0.035 0.043 0.550 REF G BAS21A BAS21 BAS21C 0.022 REF BAS21S Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units PD 225 mW Repetitive Peak Reverse Voltage VRRM 250 V Repetitive Peak Forward Current IFRM 625 mA IO 200 mA Power Dissipation Mean Forward Current Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) (Note 2) Junction and Storage Temperature Range IFSM 1 A RθJA 500 °C/W TJ, TSTG -55 to + 150 °C Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage IR= 100μA IF= 100mA IF= 200mA VR= Reverse Leakage Current 200V VR=1V, f=1.0MHz Junction Capacitance Reverse Recovery Time IF=IR=10mA, RL=100Ω, IRR=1mA Symbol Min Max Units V(BR) 250 - V VF - 1.00 V - 1.25 V IR - 100 μA CJ - 5 pF Trr - 50.0 ns Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Pulse Width=1 μsec Notes:2. Valid provided that electrodes are kept at ambient temperature Version : B09