Transcript
To our customers,
Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com
April 1st, 2010 Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.
Notice 1.
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”:
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BB503C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0834-0500 (Previous ADE-208-812C) Rev.5.00 Aug.10.2005
Features • • • •
Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4
Notes:
1. Marking is “CS–”. 2. BB503C is individual type number of RENESAS BBFET.
Rev.5.00 Aug 10, 2005 page 1 of 10
1. Source 2. Gate1 3. Gate2 4. Drain
BB503C
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage
Symbol VDS VG1S
Ratings 6
Unit V
+6 –0
V
Gate2 to source voltage
VG2S
V
Drain current Channel power dissipation Channel temperature Storage temperature
ID Pch Tch Tstg
+6 –0 20 100 150 –55 to +150
mA mW °C °C
Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage
Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off)
Min 6 +6 +6 — — 0.5
Typ — — — — — 0.7
Max — — — +100 +100 1.0
Unit V V V nA nA V
VG2S(off)
0.5
0.7
1.0
V
Drain current
ID(op)
7
10
13
mA
VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 47 kΩ
Forward transfer admittance
|yfs|
19
24
29
mS
Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure
Ciss Coss Crss PG NF
1.4 0.7 — 17 —
1.7 1.1 0.025 22 1.8
2.0 1.5 0.05 — 2.4
pF pF pF dB dB
VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 47 kΩ, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S =4 V, RG = 47 kΩ f = 1 MHz
Gate2 to source cutoff voltage
Rev.5.00 Aug 10, 2005 page 2 of 10
Test conditions ID = 200 µA, VG1S = VG2S = 0 IG1 = +10 µA, VG2S = VDS = 0 IG2 = +10 µA, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V ID = 100 µA VDS = 5 V, VG1S = 5 V ID = 100 µA
VDS = 5 V, VG1 = 5 V VG2S =4 V, RG = 47 kΩ f = 900 MHz
BB503C
Main Characteristics Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2
VG1
RG Gate 2
Gate 1
Drain
Source
A ID
Application Circuit VDS = 5 V
VAGC = 4 to 0.3 V BBFET
Input
RG VGG = 5 V
Rev.5.00 Aug 10, 2005 page 3 of 10
RFC Output
BB503C 900MHz Power Gain, Noise Figure Test Circuit VD
VG1 VG2
C6
C4
C5
R1
R2 C3
R3
RFC
Output (50Ω)
D
G2
L3
Input (50Ω)
L4
G1 S L1
L2
C1
C1, C2 : C3 : C4 to C6 : R1 : R2 : R3 :
C2
Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 47 kΩ 47 kΩ 4.7 kΩ
L2:
L1: 10
3
3
8
10
26
(φ1mm Copper wire) Unit: mm
21 L4:
L3:
18 10
10
7
7
29
RFC:φ1mm Copper wire with enamel 4turns inside dia 6mm
Rev.5.00 Aug 10, 2005 page 4 of 10
BB503C
Typical Output Characteristics 20
200
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Maximum Channel Power Dissipation Curve
150
100
50
0
50
100
150
16
Drain Current ID (mA)
Drain Current ID (mA)
12
4V 3V
8
4 VG2S = 1 V
2
3
2
3
4
5
4V 8
4 VG2S = 1 V
2V
8 3V VG2S = 1 V
4
Gate1 Voltage VG1 (V)
Rev.5.00 Aug 10, 2005 page 5 of 10
5
Forward Transfer Admittance |yfs| (mS)
12
3
1
2
3
4
5
Forward Transfer Admittance vs. Gate1 Voltage
VDS = 5 V RG = 68 kΩ
2
3V
Gate1 Voltage VG1 (V)
20
4
VDS = 5 V RG = 47 kΩ 2V
Drain Current vs. Gate1 Voltage
Drain Current ID (mA)
1
12
0
5
4
16
Gate1 Voltage VG1 (V)
1
kΩ 47 Ω 68 k kΩ 0 0 1
20
2V
0
kΩ
Drain Current vs. Gate1 Voltage
16
16
kΩ
Drain to Source Voltage VDS (V)
VDS = 5 V RG = 33 kΩ
1
33
4
Drain Current vs. Gate1 Voltage
0
22
RG
8
Ambient Temperature Ta (°C)
20
=
12
0
200
VG2S = 4 V VG1 = VDS
30
24
VDS = 5 V RG = 33 kΩ f = 1 kHz
4V
3V
18 2V
12
6 VG2S = 1 V
0
1
2
3
4
Gate1 Voltage VG1 (V)
5
BB503C Forward Transfer Admittance vs. Gate1 Voltage
30
24
VDS = 5 V RG = 47 kΩ f = 1 kHz
4V
3V
2V
18
12
6 VG2S = 1 V
0
1
2
3
Gate1 Voltage
4
5
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance vs. Gate1 Voltage 30
VDS = 5 V RG = 68 kΩ 24 f = 1 kHz
6 VG2S = 1 V
0
VDS = VG1 = 5 V VG2S = 4 V f = 900 MHz
50
20
3
5
VG1 (V)
0 10
100
VDS = VG1 = 5 V VG2S = 4 V f = 900 MHz
1
20
50
100
Gate Resistance RG (kΩ)
Power Gain vs. Drain Current
Noise Figure vs. Drain Current
30
4
25
Noise Figure NF (dB)
Power Gain PG (dB)
4
2
Gate Resistance RG (kΩ)
20 15
0 0
3
Noise Figure vs. Gate Resistance
Noise Figure NF (dB)
Power Gain PG (dB)
15
5
2
4
20
10
1
Gate1 Voltage
25
0 10
2V
12
VG1 (V)
30
5
3V
18
Power Gain vs. Gate Resistance
10
4V
VDS = VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 5
10
15
Drain Current ID (mA)
Rev.5.00 Aug 10, 2005 page 6 of 10
20
VDS = VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz
3
2
1
0
0
5
10
15
Drain Current ID (mA)
20
BB503C Power Gain vs. Gate2 to Source Voltage
Drain Current vs. Gate Resistance 25
Power Gain PG (dB)
Drain Current ID (mA)
20
15
10
VDS = VG1 = 5 V VG2S = 4 V
5
0 10
50
20
20
15
10 VDS = 5 V RG = 47 kΩ f = 900 MHz
5
0 1
100
Noise Figure vs. Gate2 to Source Voltage
Input Capacitance vs. Gate2 to Source Voltage 4
VDS = 5 V RG = 47 kΩ f = 900 MHz
4
Input Capacitance Ciss (pF)
Noise Figure NF (dB)
5
3
2
1 1
2
4
3
Gate2 to Source Voltage VG2S (V)
Gain Reduction vs. Gate2 to Source Voltage 0
Gain Reduction GR (dB)
4
3
Gate2 to Source Voltage VG2S (V)
Gate Resistance RG (kΩ)
10
20
30 VDS = VG1 = 5 V VG2S = 4 V RG = 47 kΩ
40
50
2
4
3
2
1
0
Gate2 to Source Voltage VG2S (V)
Rev.5.00 Aug 10, 2005 page 7 of 10
3
2
1
0
VDS = 5 V RG = 47 kΩ f = 1 MHz 0
1
2
3
4
Gate2 to Source Voltage VG2S (V)
BB503C S21 Parameter vs. Frequency
S11 Parameter vs. Frequency .8
1
.6
90°
1.5
Scale: 1 / div. 60°
120°
2 .4 3
30°
150°
4 5
.2
10 .2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10 –5 –4
–.2
–.4
–30°
–150°
–3 –2 –.6
–.8
–1
–90°
Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 47 kΩ , Zo = 50Ω 50 to 1000 MHz (50 MHz step)
Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 47 kΩ , Zo = 50Ω 50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency 90°
–60°
–120°
–1.5
S22 Parameter vs. Frequency
Scale: 0.002 / div.
.8
60°
120°
1
.6
1.5 2
.4 3 30°
150°
4 5
.2
10 180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10 –10 –5 –4
–.2 –30°
–150°
–3 –.4 –60°
–120° –90°
Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 47 kΩ , Zo = 50Ω 50 to 1000 MHz (50 MHz step)
Rev.5.00 Aug 10, 2005 page 8 of 10
–2 –.6
–.8
–1
–1.5
Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 47 kΩ , Zo = 50Ω 50 to 1000 MHz (50 MHz step)
BB503C
S Parameter (VDS = VG1 = 5V, VG2S = 4V, RG = 47kΩ, Zo = 50Ω) f(MHz)
S11
S21
S12
S22
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800
MAG. 0.975 0.977 0.975 0.972 0.968 0.963 0.954 0.946 0.937 0.930 0.920 0.914 0.902 0.886 0.879 0.873
ANG. –2.6 –6.5 –9.1 –12.4 –15.6 –18.9 –22.2 –25.3 –28.2 –31.5 –34.7 –37.4 –40.4 –43.5 –46.1 –48.9
MAG. 2.37 2.37 2.36 2.33 2.32 2.30 2.28 2.25 2.22 2.19 2.16 2.13 2.09 2.07 2.03 1.99
ANG. 176.1 172.1 168.0 163.8 159.9 156.0 151.8 148.2 144.1 140.2 136.3 132.7 129.3 125.4 122.0 118.3
MAG. 0.00097 0.00162 0.00222 0.00282 0.00388 0.00437 0.00518 0.00567 0.00631 0.00637 0.00720 0.00747 0.00738 0.00758 0.00757 0.00729
ANG. 74.4 89.8 78.2 83.8 81.1 76.0 73.6 75.6 72.5 72.7 70.3 67.0 69.2 68.6 66.0 67.5
MAG. 0.995 0.998 0.997 0.996 0.994 0.993 0.991 0.989 0.986 0.984 0.981 0.978 0.975 0.972 0.968 0.966
ANG. –1.9 –3.9 –5.8 –8.0 –10.0 –11.8 –13.9 –15.8 –17.8 –19.6 –21.6 –23.4 –25.4 –27.3 –29.0 –31.0
850 900 950 1000
0.857 0.845 0.838 0.824
–52.0 –54.5 –57.2 –59.6
1.96 1.93 1.90 1.86
114.9 111.4 108.1 104.9
0.00723 0.00706 0.00659 0.00574
68.8 68.3 67.5 71.0
0.962 0.959 0.954 0.952
–32.9 –34.8 –36.6 –38.5
Rev.5.00 Aug 10, 2005 page 9 of 10
BB503C
Package Dimensions JEITA Package Code
RENESAS Code
SC-82A
Package Name
PTSP0004ZA-A
CMPAK-4(T) / CMPAK-4(T)V
D
MASS[Typ.] 0.006g
A
e2
e Q
b1
c B
B
E
HE LP Reference Symbol
L A
A x M
L1 S
A
e2
A2
e
l1
b5 S
b
c
A
A1
y S
b2
A3
b
e1
b1 b3
c1
c1
c A-A Section
l1
b4 B-B Section
Pattern of terminal position areas
A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q
Dimension in Millimeters
Min 0.8 0 0.8 0.25 0.35
0.1 1.8 1.15
1.8 0.3 0.1 0.2
Nom
0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1
Max 1.1 0.1 1.0 0.4 0.5
0.15 2.2 1.35
2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55
1.5 0.9 0.2
Ordering Information Part Name BB503CCS-TL-E
Quantity 3000
Shipping Container φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00 Aug 10, 2005 page 10 of 10
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0
