Transcript
BCP51...-BCP53... PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BCP51
*
1=B
2=C
3=E
4=C
-
-
SOT223
BCP51-16
*
1=B
2=C
3=E
4=C
-
-
SOT223
BCP52-16
*
1=B
2=C
3=E
4=C
-
-
SOT223
BCP53-10
*
1=B
2=C
3=E
4=C
-
-
SOT223
BCP53-16
*
1=B
2=C
3=E
4=C
-
-
SOT223
* Marking is the same as type-name
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BCP51...-BCP53... Maximum Ratings Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BCP51
45
BCP52
60
BCP53
80
Collector-base voltage
Unit
VCBO
BCP51
45
BCP52
60
BCP53
100
Emitter-base voltage
VEBO
5
Collector current
IC
1
Peak collector current, tp ≤ 10 ms
ICM
1.5
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
2
W
150
°C
A mA
TS ≤ 120°C Junction temperature
Tj
Storage temperature
Tstg
Thermal Resistance Parameter Junction - soldering point1)
Symbol RthJS
-65 ... 150
Value ≤ 15
Unit K/W
1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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BCP51...-BCP53... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCP51
45
-
-
IC = 10 mA, IB = 0 , BCP52
60
-
-
IC = 10 mA, IB = 0 , BCP53
80
-
-
IC = 100 µA, IE = 0 , BCP51
45
-
-
IC = 100 µA, IE = 0 , BCP52
60
-
-
IC = 100 µA, IE = 0 , BCP53
100
-
-
5
-
-
Collector-base breakdown voltage
Unit
V
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 10 µA, IC = 0 Collector-base cutoff current
ICBO
µA
VCB = 30 V, IE = 0
-
-
0.1
VCB = 30 V, IE = 0 , TA = 150 °C
-
-
20
DC current gain1)
-
hFE
IC = 5 mA, VCE = 2 V
25
-
-
IC = 150 mA, VCE = 2 V, BCP51
40
-
250
IC = 150 mA, VCE = 2 V, BCP53-10
63
100
160
IC = 150 mA, VCE = 2 V, BCP51-16...BCP53-16
100
160
250
IC = 500 mA, VCE = 2 V
25
-
-
VCEsat
-
-
0.5
VBE(ON)
-
-
1
fT
-
125
-
Collector-emitter saturation voltage1)
V
IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V
AC Characteristics Transition frequency
MHz
IC = 50 mA, VCE = 10 V, f = 100 MHz 1Pulse
test: t < 300µs; D < 2%
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BCP51...-BCP53... DC current gain hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 2 V
IC = ƒ(VCEsat ), hFE = 10
10 3 h FE
BCP 51...53
EHP00261
5
ΙC
10 2
BCP 51...53
10 4
EHP00264
mA 10 3
100 C 25 C
5
-50 C
100 C 25 C -50 C
5 10 2 5 10
1
10 1
5
5
10 0 0 10
10 1
10 2
10 0
mA 10 4
10 3
0
0.2
0.6
0.4
ΙC
V V CEsat
Base-emitter saturation voltage
Collector cutoff current ICBO = ƒ(TA)
IC = ƒ(VBEsat), hFE = 10
VCBO = 30 V
10 4
ΙC
BCP 51...53
EHP00263
10 4
Ι CBO
mA
BCP 51...53
EHP00262
nA max
10 3 10
0.8
3
100 C 25 C -50C
10 2
10 2
typ
10 1 10 1
10 0
10 0
0
0.2
0.4
0.6
0.8
V
10 -1
1.2
V BEsat
0
50
100
C
150
TA
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BCP51...-BCP53... Transition frequency fT = ƒ(IC) VCE = 10 V BCP 51...53
10 3
Total power dissipation P tot = ƒ(TS)
EHP00260
2.4
MHz W
5
Ptot
fT
1.6
10 2
1.2
5
0.8
0.4
10 1
10 1
10 0
10 2
mA
0 0
10 3
15
30
45
60
90 105 120 °C
75
150
TS
ΙC
Permissible Pulse Load RthJS = ƒ(tp)
Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 10 3
Ptotmax/PtotDC
RthJS
10 2
10 1
D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0
10 0
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
-
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
10 1
s
10
10 0 -6 10
0
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
TP
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Package SOT223
1.6±0.1
6.5 ±0.2
A
0.1 MAX.
3 ±0.1
7 ±0.3 3
2
0.5 MIN.
1
2.3
0.7 ±0.1
B
15˚ MAX.
4
3.5 ±0.2
Package Outline
BCP51...-BCP53...
4.6
0.28 ±0.04
0...10˚
0.25 M A 0.25 M B
Foot Print
1.4
4.8
1.4
3.5
1.2 1.1
Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code
Pin 1
Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel
0.3 MAX.
7.55 12
8
Pin 1
1.75
6.8
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BCP51...-BCP53... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ().
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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