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Bcr4cm-16lh Datasheet

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Preliminary Datasheet BCR4CM-16LH R07DS0255EJ0200 Rev.2.00 Feb 25, 2013 800V - 4A - Triac Medium Power Use Features      The Product guaranteed maximum junction temperature 150C  Planar Type IT (RMS) : 4 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 35 mA or 10mA(IGT item:1) High Commutation Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) RENESAS Package code: PRSS0004AA-A A (Package name: TO-220) 4 4 2, 4 3 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 1 2 12 3 3 Applications Switching mode power supply, small motor control, heater control, and other general purpose AC power control applications Maximum Ratings Parameter Voltage class 16 800 960 Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 VDRM VDSM Parameter RMS on-state current Symbol IT (RMS) Ratings 4 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG (AV) VGM IGM Tj Tstg — 3 0.3 10 2 –40 to +150 –40 to +150 2.1 W W V A C C g I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass R07DS0255EJ0200 Rev.2.00 Feb 25, 2013 Unit V V Conditions Commercial frequency, sine full wave 360conduction, Tc = 132C Note3 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Page 1 of 8 BCR4CM-16LH Preliminary Electrical Characteristics Parameter Symbol BCR4CM-16LH-1 (IGT item: 1) BCR4CM-16LH Unit Test conditions Typ. — Max. 2.0 Min. — Typ. — Max. 2.0 mA Tj = 150C VDRM applied Tc = 25C, ITM = 6 A instantaneous measurement Tj = 25C, VD = 6 V RL = 6 , RG = 330  Repetitive peak off-state current IDRM Min. — On-state voltage VTM — — 1.6 — — 1.6 V Gate trigger voltageNote2    VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 — — — — — — 1.5 1.5 1.5 V V V Gate trigger curentNote2    IFGT IRGT IRGT — — — — — — 10 10 10 — — — — — — 35 35 35 mA mA mA VGD 0.2 — — 0.2 — — 0.1 — — 0.1 — — — 2.5 — — 3.3 — — — — — 3.3 — — — — 3.0 — — Gate non-trigger voltage Thermal resistance Rth (j-c) Critical-rate of decay of on-state Note5 commutating current (di/dt)c Notes: 1. 2. 3. 4. 5. Tj = 25C, VD = 6 V RL = 6 , RG = 330  Tj = 125C VD = 1/2 VDRM Tj = 150C V VD = 1/2 VDRM Note3,4 C/W Junction to case A/ms Tj = 125C (dv/dt)c < 10 V/s A/ms Tj = 125C (dv/dt)c < 100 V/s V Gate open. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 tab 1.5 mm apart from the molded case. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below. Test conditions 1. Junction temperature Tj = 125C 2. Peak off-state voltage VD = 400 V 2. Rate of rise of off-state commutating voltage (dv/dt)c < 10 V/s (IGT item : 1) (dv/dt)c < 100 V/s R07DS0255EJ0200 Rev.2.00 Feb 25, 2013 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 8 BCR4CM-16LH Preliminary Performance Curve Maximum On-State Characteristics Rated Surge On-State Current 102 40 Surge On-State Current (A) 101 100 10−1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 20 15 10 5 100 101 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PG(AV) = 0.3W 101 PGM = 3W VGT = 1.5V IGM = 2A 100 IGT = 35mA IGTitem1 = 10mA VGD = 0.1V 10−1 1 10 102 103 104 103 Typical Example 102 IFGT I IRGT I IRGT III VD = 6V RL = 6Ω 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 VD = 6V RL = 6Ω 101 –40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 30 On-State Voltage (V) 102 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 35 0 4.0 0 40 80 120 Junction Temperature (°C) R07DS0255EJ0200 Rev.2.00 Feb 25, 2013 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tj = 25°C 102 4.0 103 104 100 101 3.2 2.4 1.6 0.8 0 10−1 102 Conduction Time (Cycles at 60Hz) Page 3 of 8 BCR4CM-16LH Preliminary Allowable Case Temperature vs. RMS On-State Current 7 160 6 140 Case Temperature (°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 5 4 3 2 360° Conduction Resistive, inductive loads 1 0 0 1 2 3 4 6 5 7 60 40 360° Conduction 20 Resistive, inductive loads 0 0 1 2 3 4 5 6 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 140 Ambient Temperature (°C) 120 120 t2.3 120 100 100 t2.3 60 60 t2.3 80 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 1 2 3 4 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 5 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 106 Typical Example 105 104 103 102 –40 0 40 80 120 Junction Temperature (°C) R07DS0255EJ0200 Rev.2.00 Feb 25, 2013 160 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Ambient Temperature (°C) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) 80 RMS On-State Current (A) 160 100 120 Curves apply regardless of conduction angle 100 3.0 103 Typical Example 102 101 –40 0 40 80 120 160 Junction Temperature (°C) Page 4 of 8 BCR4CM-16LH Preliminary Breakover Voltage vs. Junction Temperature 103 T2+, G– Typical Example 102 101 T2–, G– Typical Example T +, G+ 2 Typical Example 40 80 120 160 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 125°C 140 120 100 80 III Quadrant 60 40 I Quadrant 20 0 101 102 103 104 160 Typical Example Tj = 150°C 140 120 100 80 III Quadrant 60 40 I Quadrant 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 102 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 0 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) 100 –40 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz III Quadrant Minimum Value (IGTitem1) I Quadrant Minimum Value 100 100 101 Rate of Decay of On-State Commutating Current (A/ms) R07DS0255EJ0200 Rev.2.00 Feb 25, 2013 102 102 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Latching Current (mA) Distribution Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Latching Current vs. Junction Temperature Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz 101 III Quadrant I Quadrant 100 100 101 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 8 BCR4CM-16LH Preliminary Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V V Test Procedure I R1 A 6V 330Ω V 330Ω Test Procedure II C0 R0 C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS0255EJ0200 Rev.2.00 Feb 25, 2013 Page 6 of 8 BCR4CM-16LH Preliminary Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AG-A Previous Code TO-220ABS MASS[Typ.] 2.1g Unit: mm 4.5 ± 0.2 2.8 ± 0.1 Package Name TO-220AB 9.9 ± 0.2 + 0.10 φ3.6 ± 0.2 13.08 ± 0.20 (3.00) 9.2 ± 0.2 15.7 ± 0.2 1.30 – 0.05 1.62 Max 0.80 ± 0.10 2.6 Max 2.54 2.54 + 0.10 0.50 – 0.05 10.0 ± 0.2 Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code ⎯ MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 2 R07DS0255EJ0200 Rev.2.00 Feb 25, 2013 Page 7 of 8 BCR4CM-16LH Preliminary Ordering Information Orderable Part Number BCR4CM-16LH#BB0 BCE4CM-16LH-1#BB0 Note: Packing Tube Tube Quantity 50 pcs. 50 pcs. Remark Straight type Straight type, IGT item1 Please confirm the specification about the shipping in detail. R07DS0255EJ0200 Rev.2.00 Feb 25, 2013 Page 8 of 8 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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