Transcript
BROADBAND DISTRIBUTED AMPLIFIER
ADM-0012-5931SM
The ADM-0012-5931SM is a small, low power, and economical T3 driver or T3A pre-amplifier. It is a GaAs PHEMT distributed amplifier in a 3mm QFN surface mount package. The ADM-0012-5931SM can provide LO drive for ‘L’, ‘M’, ‘I’, and ‘H’ level mixers, with 11.5 dB typical gain and +19 dBm typical saturated output power for only 85 mA of current. The amplifier can be biased with internal circuitry, or with an external bias network for lower voltage and single supply operation. Additional applications include amplification of clock signals and other general purpose driver applications in electronic warfare and test and measurement. Features
Optimized for use as a T3 LO buffer amplifier 3rd and 5th Harmonic Generation Suitable for driving L, M, and I diode mixers Optional Positive Only Bias or Internal Bias Operation Broadband 50 Ω Matching Unconditionally Stable
Electrical Specifications - Specifications measured in a 50-Ohm system. Parameter
Frequency
Min
Typ
Max
+5
+10
+12
(GHz)
Input for Saturated Output (dBm) Output 1 dB Compression (dBm)
+16
Saturated Output Power with negative bias (dBm) Small Signal Gain with negative bias (dB)
+19 DC to 12.0
11.5
Input Return Loss (dB)
13
Output Return Loss (dB)
14
Noise Figure (dB)
4.5
Third Order Output Intercept Point (dBm)
26
Bias Requirements, Internal (mA) Vd: +10.0 to +12.0 / Vg:-0.25 Volts
85
Bias Requirements, External (mA) Vd: +5.0 to +7.0 / Vg: -0.25 Volts
85
Vd: +5.0 to +7.0 / Vg: 0 Volts
115
Part Number Options
1
Model Number
Description
ADM-0012-5931SM 1
Surface Mount 3mm QFN
EVAL3-ADM-5931
Connectorized Evaluation Fixture
Note: For port locations and I/O designations, refer to the drawings on pages 2, 8, 11, and 12 of this document.
GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER Page 2
ADM-0012-5931SM Frequency DC to 12.0 GHz
Functional Diagram and Application Circuit – External Positive Bias (Pin 9 Output with Bias Tee)
10 Ohms
Vd
0.1 uF
100 pF 12
RF In
11 10
1
9
2
8
3
7 4
5
RF Out Bias Tee
6
10 Ohms 0.1 uF
1 uF
100 pF
Vg 1 uF
Biasing and Operation RF In / RF Out – Input and output signals should be connected by 50 ohm microstrip or coplanar traces to well matched 50 ohm sources and loads. DC blocking capacitors or bias tees are required. Vg – Negative gate voltage is optional to improve lifetime of the amplifier and reduce current consumption. Harmonic generation is also significantly affected by the negative gate voltage level. The amplifier is designed for optimal performance when the negative gate voltage is tuned such that the positive bias supply is 85 mA. It may be supplied through pin 6 or through the RF input on pin 3. Vd- Bias supply supplied to Vd through pin 9 should be voltage limited below 9 V and current limited below 150 mA at all times. The operational bias voltage should be between 3 V and 7 V for full gain, efficiency, and linearity. In general gain, linearity, and output power will increase marginally with increased voltage from 5 to 7 V. Optional Bias Circuitry – The resistor and capacitor on the Vd and Vg lines (pads 11, 12, and 6) prevent low frequency oscillation. These components are not required in bias circuits with sufficient low frequency loss. Designers should experiment to determine if they are necessary. DC/RF Ground – The ground paddle of the QFN should be connected to a low noise RF and DC ground with very low electrical and thermal resistance for high frequency operation and thermal heat sinking.
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER
ADM-0012-5931SM
Page 3
Frequency DC to 12.0 GHz Typical Performance – Positive Only (+3 to +7V) External Bias (Pin 9 Output), Grounded Gate (Pin 6)
Small Signal Gain (dB)
20
Saturated Output Power (dBm)
25
15
20
10
15
5
10 5
0
+7 Volt/-0 Volt Bias
+7 Volt/-0 Volt Bias
-5
0
+3 Volt/-0 Volt Bias
-10
+3 Volt/-0 Volt Bias
-5 0
2
4
6
8
10
12
0
2
4
Frequency (GHz)
Reverse Isolation (dB)
0
8
10
12
Small Signal Return Loss (dB)
0
+7 Volt/-0 Volt Bias
-10
6 Frequency (GHz)
-5
+3 Volt/-0 Volt Bias
-10
-20
-15
-30
-20 -40
-25
-50
Input, +7 Volt/-0 Volt Bias Input, +3 Volt/-0 Volt Bias Output, +7 Volt/ -0 Volt Bias Output +3 Volt/-0 Volt Bias
-30
-60
-35 -40
-70 0
2
4
6
8
10
0
12
2
4
Input IP3 (dBm)
30
25
20
20
15
15
10
10 5
+7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias
0 0
2
4
6 Frequency (GHz)
8
10
12
10
12
Output IP3 (dBm)
30
25
5
6 Frequency (GHz)
Frequency (GHz)
8
+7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias
0 10
12
0
2
4
6
8
Frequency (GHz)
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER Page 4
ADM-0012-5931SM Frequency DC to 12.0 GHz
Typical Performance – Positive Only (+3 to +7V) External Bias (Pin 9 Output), Grounded Gate (Pin 6), continued
Even Harmonic Generation (dBm) +10 dBm Input
Odd Harmonic Generation (dBm) +10 dBm Input
40
40
+7 Volt/-0 Volt Bias, Second Harmonic +3 Volt/-0 Volt Bias, Second Harmonic +7 Volt/-0 Volt Bias, Fourth Harmonic +3 Volt/-0 Volt Bias, Fourth Harmonic
30 20
+7 Volt/-0 Volt Bias, Third Harmonic +3 Volt/-0 Volt Bias, Third Harmonic +7 Volt/-0 Volt Bias, Fifth Harmonic +3 Volt/-0 Volt Bias, Fifth Harmonic
30 20
10
10
0
0
-10
-10
-20
-20
-30
-30 -40
-40 0
2
4
6
8
10
0
12
2
4
Output P1dB (dBm)
20
6
8
10
12
10
12
Output Frequency (GHz)
Output Frequency (GHz)
Group Delay (ps)
300 275
15
250 10
225
5
200 175
0
150 -5 -10 0
2
4
6
8
+7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias
125
+7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias
100 10
12
0
2
4
Frequency (GHz) Noise Figure(dB)
20
6
8
Frequency (GHz) Current Consumption (mA) with 10 GHz Input
150
+7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias
Vg= -0V, Pin= -10 dBm Vg= -0V, Pin= +10 dBm
140 130
15
120 110
10
100 90 80
5
70
60 0
50 0
2
4
6 Frequency (GHz)
8
10
12
2
3
4
5
6
7
8
Vd (V)
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER
ADM-0012-5931SM
Page 5
Frequency DC to 12.0 GHz Typical Performance – +3 to +7V External Bias (Pin 9 Output), -0.25 Negative Bias (Pin 6)
Small Signal Gain (dB)
20
Small Signal Gain (dB) over Temperature
20
15
15
10
10
5
5
0
0 +7 Volt/-0.25 Volt Bias
-5
-55°C, +7 Volt/-0.25 Volt Bias +25°C, +7 Volt/-0.25 Volt Bias +85°C, +7 Volt/-0.25 Volt Bias
-5
+3 Volt/-0.25 Volt Bias
-10
-10 0
2
4
6
8
10
0
12
2
4
Saturated Output Power (dBm)
25
6
8
10
12
10
12
10
12
Frequency (GHz)
Frequency (GHz)
Reverse Isolation (dB)
0
+7 Volt/-0.25 Volt Bias
-10
20
+3 Volt/-0.25 Volt Bias
-20
15
-30
10 -40
5
-50
+7 Volt/-0.25 Volt Bias 0
-60
+3 Volt/-0.25 Volt Bias
-5
-70
0
2
4
6
8
10
0
12
2
4
Input IP3 (dBm)
30
25
20
20
15
15
10
10 5
+7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias
0 0
2
4
6 Frequency (GHz)
8
Output IP3 (dBm)
30
25
5
6 Frequency (GHz)
Frequency (GHz)
8
+7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias
0 10
12
0
2
4
6
8
Frequency (GHz)
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER Page 6
ADM-0012-5931SM Frequency DC to 12.0 GHz
Typical Performance – +3 to +7V External Bias (Pin 9 Output), -0.25 Negative Bias (Pin 6) continued
Input Small Signal Return Loss (dB) 0
0
-5
-5
-10
-10
-15
-15
-20
-20
-25
-25
-30
Input Small Signal Return Loss (dB) over Temperature -55°C, +7 Volt/-0.25 Volt Bias +25°C, +7 Volt/-0.25 Volt Bias +85°C, +7 Volt/-0.25 Volt Bias
-30
+7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias
-35
-35
-40
-40
-45
-45
0
2
4
6
8
10
0
12
2
4
Output Small Signal Return Loss (dB)
0
6
8
10
12
Frequency (GHz)
Frequency (GHz)
Output Small Signal Return Loss (dB) over Temperature
0
-5
-5
-10
-10
-15
-15
-20
-20
-25
-25
-55°C, +7 Volt/-0.25 Volt Bias +25°C, +7 Volt/-0.25 Volt Bias +85°C, +7 Volt/-0.25 Volt Bias
-30
-30 +7 Volt/ -0.25 Volt… +3 Volt/-0.25 Volt Bias
-35
-35
-40
-40
-45
-45 0
2
4
6
8
10
12
0
2
4
Frequency (GHz)
6
8
10
12
Frequency (GHz)
Even Harmonic Generation (dBm) +10 dBm Input
Odd Harmonic Generation (dBm) +10 dBm Input
40
40
+7 Volt/-0.25 Volt Bias, Second Harmonic +3 Volt/-0.25 Volt Bias, Second Harmonic +7 Volt/-0.25 Volt Bias, Fourth Harmonic +3 Volt/-0.25 Volt Bias, Fourth Harmonic
30 20
+7 Volt/-0.25 Volt Bias, Third Harmonic +3 Volt/-0.25 Volt Bias, Third Harmonic +7 Volt/-0.25 Volt Bias, Fifth Harmonic +3 Volt/-0.25 Volt Bias, Fifth Harmonic
30 20
10
10
0
0
-10
-10
-20
-20
-30
-30 -40
-40 0
2
4
6
8
Output Frequency (GHz)
10
12
0
2
4
6
8
10
12
Output Frequency (GHz)
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER Page 7
ADM-0012-5931SM Frequency DC to 12.0 GHz
Typical Performance – +3 to +7V External Bias (Pin 9 Output), -0.25 Negative Bias (Pin 6) continued
Output P1dB (dBm)
20
Group Delay (ps)
300 275
15
250 10
225
5
200 175
0
150 -5 -10 0
2
4
6
8
+7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias
125
+7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias
100 10
12
0
2
4
Frequency (GHz)
Noise Figure(dB)
20
6
8
10
12
Frequency (GHz)
Current Consumption (mA) with 10 GHz Input
120
+7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias
Vg= -0.25V, Pin= -10 dBm Vg= -0.25V, Pin= +10 dBm
110
15
100 90
10
80
70 5
60 50
0
40 0
2
4
6 Frequency (GHz)
8
10
12
2
3
4
5
6
7
8
Vd (V)
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER Page 8
ADM-0012-5931SM Frequency DC to 12.0 GHz
Functional Diagram and Application Circuit – Internal Positive Bias Tee (Pin 11)
10 Ohms 100 pF
0.1 uF 12
RF In
11 10
1
9
2
8
3
7 4
5
RF Out
6
10 Ohms 0.1 uF
1 uF
Vd
100 pF
Vg 1 uF
Biasing and Operation RF In / RF Out – Input and output signals should be connected by 50 ohm microstrip or coplanar traces to well matched 50 ohm sources and loads. DC blocking capacitors are required. Vg – Recommended bias on this pin is -0.1 to -0.3 Volts. Harmonic generation is significantly affected by the negative gate voltage level. The amplifier is designed for optimal performance when the negative gate voltage is tuned such that the positive bias supply is 85 mA. It may be supplied through pin 6 or through the RF input on pin 3. Vd- Bias supply on Vd through pin 11 should be voltage limited below 13 V and current limited below 150 mA at all times. The operational bias voltage should be between 10 V and 12 V for full gain, efficiency, and linearity. In general gain, linearity, and output power will increase marginally with increased voltage from 10 V to12 V. When the internal positive bias tee is used, pin 12 is left DC and RF open circuited and should not be connected to ground. Optional Bias Circuitry – The resistor and capacitor on the Vd and Vg lines (pads 11, 12, and 6) prevent low frequency oscillation. These components are not required in bias circuits with sufficient low frequency loss. Designers should experiment to determine if they are necessary. DC/RF Ground – The ground paddle of the QFN should be connected to a low noise RF and DC ground with very low electrical and thermal resistance for high frequency operation and thermal heat sinking.
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER
ADM-0012-5931SM
Page 9
Frequency DC to 12.0 GHz Typical Performance – +9 to +12V Internal Bias (Pin 11), -0.25 Negative Bias (Pin 6)
Small Signal Gain (dB)
20
Saturated Output Power (dBm)
25
15
20
10
15
5
10 5
0
+12 Volt/-0.25 Volt Bias
+12 Volt/-0.25 Volt Bias
-5
0
+9 Volt/-0.25 Volt Bias
-10
+9 Volt/-0.25 Volt Bias
-5 0
2
4
6
8
10
12
0
2
4
Frequency (GHz)
Reverse Isolation (dB)
0 -10 -20
6
8
10
12
Frequency (GHz)
Small Signal Return Loss (dB)
0
+12 Volt/-0.25 Volt Bias
-5
+9 Volt/-0.25 Volt Bias
-10
-15
-30
-20 -40
-25
-50
Input, +12 Volt/-0.25 Volt Bias Input, +9 Volt/-0.25 Volt Bias Output, +12 Volt/ -0.25 Volt Bias Output +9 Volt/-0.25 Volt Bias
-30
-60
-35 -40
-70 0
2
4
6
8
10
0
12
2
4
Input IP3 (dBm)
30
25
20
20
15
15
10
10 5
+12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias
0 0
2
4
6 Frequency (GHz)
8
10
12
10
12
Output IP3 (dBm)
30
25
5
6 Frequency (GHz)
Frequency (GHz)
8
+12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias
0 10
12
0
2
4
6
8
Frequency (GHz)
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER Page 10
ADM-0012-5931SM Frequency DC to 12.0 GHz
Typical Performance – +9 to +12V Internal Bias (Pin 11), -0.25 Negative Bias (Pin 6), continued Even Harmonic Generation (dBm) +10 dBm Input
Odd Harmonic Generation (dBm) +10 dBm Input
40
40
+12 Volt/-0.25 Volt Bias, Second Harmonic +9 Volt/-0.25 Volt Bias, Second Harmonic +12 Volt/-0.25 Volt Bias, Fourth Harmonic +9 Volt/-0.25 Volt Bias, Fourth Harmonic
30 20
+12 Volt/-0.25 Volt Bias, Third Harmonic +9 Volt/-0.25 Volt Bias, Third Harmonic +12 Volt/-0.25 Volt Bias, Fifth Harmonic +9 Volt/-0.25 Volt Bias, Fifth Harmonic
30 20
10
10
0
0
-10
-10
-20
-20
-30
-30 -40
-40 0
2
4
6
8
10
0
12
2
4
6
Input P1dB (dBm)
20 15
15
10
10
5
5
0
0
-5
-5 2
4
6
8
12
10
12
10
12
10
12
+12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias 0
2
4
6
Frequency (GHz)
8
Frequency (GHz)
Group Delay (ps)
300
10
Output P1dB (dBm)
20
+12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias
0
8
Output Frequency (GHz)
Output Frequency (GHz)
Noise Figure(dB)
20
+12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias
275 250
15
225 200
10
175
150
5 +12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias
125 100
0 0
2
4
6
8
10
12
0
2
4
Frequency (GHz)
6
8
Frequency (GHz) Current Consumption (mA) with 10 GHz Input
120
Vg= -0.25V, Pin= -10 dBm Vg= -0.25V, Pin= +10 dBm
110 100
90 80 70 60 8
9
10
11
12
13
Vd (V)
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER
ADM-0012-5931SM
Page 11
Frequency DC to 12.0 GHz Outline Drawing
.003 Typ
.114 [2.90]
.013 Typ
PROJECTION
[.08]
[.32]
INCH [MM]
10 11 12
.114 [2.90]
ADM 5931 XXYY
9 .059 [1.50]
1 Ground Paddle
8
.020 Typ [.50]
2
7
3 6
5
4
Pad # 1 2 3 4 5 6 7 8 9 10 11 12
Function N/C N/C RF In N/C N/C Vg N/C N/C RF Out N/C Vd Vd2
.012 Typ [.30]
.031 [.78]
Substrate material is Ceramic. I/O Leads and Ground Paddle are 1.4+0.6 microns (55+24 micro-inches) Au over 1.3 microns (51 micro-inches) Ni. All unconnected pads should be connected to PCB RF ground.
.000 .020 .028 .041 .061 .075 .092 .102 .112 .122
.035 .047 .055 .067
PCB Footprint Drawing
.018 .028 .035 .041 .047 .055 .061 .065 .085 .091 .102 Ø.010 Plated Thru Via, 22 PL
.010 .030 .031 .050 .067 .075 .081 .087 .091 .094
.075 .087
.000 .017 .020 .031 .037 .057 .067 .081 .094 .104 .122
QFN-Package Surface-Mount Landing Pattern Click here for a DXF of the above layout. Click here for leaded solder reflow. Click here for lead-free solder reflow.
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER Page 12
ADM-0012-5931SM Frequency DC to 12.0 GHz
Pin Descriptions Pin Number
Function
Description
1, 2, 4, 5, 7, 8,10
NC
These pins are not connected internally. Datasheet performance is tested with NC pins grounded.
3
RF in
6
Vg
9
RF out
Interface Schematic
RF in This pin is DC coupled and matched to 50 Ω. Gate control for the amplifier. External decoupling resistor/capacitor is required.
Vg RF out
This pad is DC coupled and matched to 50 Ω. Vd
11
Vd
Power supply voltage for the amplifier. External decoupling resistor/capacitor is required.
12
Vd2
This pin is left open for Internal Vd Bias. This pin is connected to Pin 11 (Vd) for external bias (pin 16 with bias tee).
Paddle
GND
Ground pad should be connected to RF/DC ground with low electrical and thermal resistance.
GND
Absolute Maximum Ratings Parameter Positive Bias Voltage – External Bias Tee Positive Bias Bias Voltage – Internal Bias Tee Positive Bias Current
Maximum Rating 9V 13 V 150 mA
Negative Bias Voltage
-2 V
Negative Bias Current
2 mA
RF Input Power
+15 dBm
Power Dissipation
875 mW
Thermal Resistance, θjc ESD (Human Body Model)
1.469 C/W Class 0
Operating Temperature
-55ºC to +85ºC
Storage Temperature
-65ºC to +150ºC
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
BROADBAND DISTRIBUTED AMPLIFIER
ADM-0012-5931SM
Page 13
Frequency DC to 26.5 GHz Evaluation Board
Solder ribbon/wire across gap for external (output port) bias
(+Vd) Out
In ADM 5931 XXYY
(+Vd)
SMA Female Connector, 2 PL
-Vg The evaluation module follows Marki standard assembly and evaluation procedures to give optimal performance for datasheet characterization. Actual QFN performance will depend on substrate material, bypass capacitors, resistors, connectors, quality of bias current/voltage source, and assembly process.
Evaluation Board Bill of Materials Item Connectors
Description/Part Number Southwest 214-510SF
Bias Pins
Kovar
Housing
Aluminum
Circuit
.008 Thick Rogers 4003
1 uF Capacitor
TDK C1005X5R1V105K050BC
100 pF Capacitor
KEMET C0402C101K4GACTU
0.1 uF Capacitor
AVX 0402YD104KAT2A
10 Ω Resistor ADM 5931
Venkel CR0201-20W-100JT ADM-0012-5931SM
DATA SHEET NOTES: 1. Specifications are subject to change without notice. Contact Marki Microwave for the most recent specifications and data sheets. Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice. Marki Microwave makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use of or application of any product.
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 |
[email protected] 9/22/16
