Transcript
1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features ■
Very small conduction losses
■
Negligible switching losses
■
Extremely fast switching
■
Low forward voltage drop
■
Avalanche capability specified
A
K DO-41
Description Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers.
July 2011
Table 1.
Device summary
Symbol
Value
Unit
IF(AV)
1
A
VRRM
40
V
Tj
150
°C
VF (max)
0.45
V
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Characteristics
1
1N5817, 1N5818, 1N5819
Characteristics Table 2.
Absolute ratings (limiting values) Value
Symbol VRRM
Repetitive peak reverse voltage
IF(RMS)
Forward rms current
Unit 1N5817
1N5818
1N5819
20
30
40
10
A
Average forward current
TL = 125 °C, δ = 0.5
1
A
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
25
A
PARM
Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
Tj dV/dt
1200
Storage temperature range
1200
900
W
-65 to + 150
°C
150
°C
10000
V/µs
Maximum operating junction temperature(1) Critical rate of rise of reverse voltage
1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink. Rth(j-a) dTj
Table 3.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
Lead length = 10 mm
100
°C/W
Rth (j-l)
Junction to lead
Lead length = 10 mm
45
°C/W
Table 4. Symbol
Static electrical characteristics Parameter
IR (1)
Reverse leakage current
VF (1)
Forward voltage drop
Tests conditions Tj = 25 °C Tj = 100 °C
VR = VRRM
1N5817
1N5818
1N5819
Unit
0.5
0.5
0.5
mA
10
10
10
mA
Tj = 25 °C
IF = 1 A
0.45
0.50
0.55
V
Tj = 25 °C
IF = 3 A
0.75
0.80
0.85
V
1. Pulse test : tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equations : P = 0.3 x IF(AV) + 0.090 IF2(RMS ) for 1N5817 / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819
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V
IF(AV)
Tstg
1.
Parameter
Doc ID 6262 Rev 5
1N5817, 1N5818, 1N5819
Figure 1.
Characteristics
Average forward power dissipation Figure 2. versus average forward current (1N5817/1N5818)
Average forward power dissipation versus average forward current (1N5819)
PF(av)(W)
PF(av)(W)
0.7
0.6 d = 0.2
d = 0.1
0.5
d = 0.5
d = 0.1
0.6
d = 0.05
d = 0.2
d = 0.5
d = 0.05
0.5
0.4
d=1
d=1
0.4 0.3
0.3 0.2
0.2
T
0.1 d=tp/T
IF(av) (A)
0.1
tp
0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Figure 3.
T
Average forward current versus ambient temperature (δ = 0.5) (1N5817/1N5818)
tp d=tp/T IF(av) (A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Figure 4.
IF(av)(A)
1.2
1.2
Average forward current versus ambient temperature (δ = 0.5) (1N5819)
IF(av)(A)
Rth(j-a)=Rth(j-l)=45°C/W
Rth(j-a)=Rth(j-l)=45°C/W
1.0
1.0 0.8
0.8
Rth(j-a)=100°C/W
Rth(j-a)=100°C/W
0.6
0.6
0.4
0.4 T
T
0.2
0.2 d=tp/T
0.0
0
Figure 5.
25
d=tp/T
Tamb(°C)
tp
50
75
100
125
150
Normalized avalanche power derating versus pulse duration
0.0
0
Figure 6.
PARM(tp) PARM(1 µs)
Tamb(°C)
tp
25
50
75
100
125
150
Normalized avalanche power derating versus junction temperature
PARM(Tj) PARM(25 °C)
1
1.2 1
0.1
0.8 0.6 0.4
0.01
0.2 0.001 0.01
Tj(°C)
tp(µs) 0.1
1
0 10
100
1000
25
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50
75
100
125
150
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Characteristics
Figure 7.
10
1N5817, 1N5818, 1N5819
Non repetitive surge peak forward Figure 8. current versus overload duration (maximum values) (1N5817/1N5818)
IM(A) 8
9
6
7 6 5
Ta=25°C
5
Ta=25°C
Ta=75°C
4
Ta=75°C
4
3
3
Ta=100°C
Ta=100°C
2
IM
1
IM
t
1E-2
Figure 9.
1
t(s)
d=0.5
0 1E-3
1.0
IM(A)
7
8
2
Non repetitive surge peak forward current versus overload duration (maximum values) (1N5819)
1E-1
1E+0
Relative variation of thermal impedance junction to ambient versus pulse duration
t
t(s)
d=0.5
0 1E-3
1E-2
1E-1
1E+0
Figure 10. Junction capacitance versus reverse voltage applied (typical values) C(pF)
Zth(j-a)/Rth(j-a)
500
(epoxy printed circuit board, e(Cu) = 35 mm, recommended pad layout)
F=1MHz Tj=25°C
0.8
200 1N5817
0.6
100
δ = 0.5
1N5818
50
0.4 δ = 0.2
0.2
T
δ = 0.1
0.0 1E-1
20 δ=tp/T
tp(s)
Single pulse
1E+0
1E+1
VR(V)
tp
1E+2
1E+3
Figure 11. Reverse leakage current versus reverse voltage applied (typical values) (1N5817/1N5818) 1E+1
1N5819
10
1
1E+1
40
1E+0
Tj=100°C
Tj=100°C
1E-1
1E-2
1E-2 Tj=25°C
Tj=25°C
VR(V)
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20
Tj=125°C
1N5817
1E-1
1E-3
10
IR(mA)
1N5818
Tj=125°C
5
Figure 12. Reverse leakage current versus reverse voltage applied (typical values) (1N5819)
IR(mA)
1E+0
2
0
5
10
15
VR(V) 20
25
30
1E-3
0
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10
15
20
30
35
40
1N5817, 1N5818, 1N5819
Characteristics
Figure 13. Forward voltage drop versus forward current (typical values) (1N5817/1N5818) 10.00
Figure 14. Forward voltage drop versus forward current (typical values) (1N5819)
IFM(A)
10.00
IFM(A)
1.00
1.00 Tj=100°C
Tj=100°C Tj=125°C
Tj=125°C Tj=25°C
0.10
0.01 0.0
VFM(V) 0.1
0.2
0.3
0.4
Tj=25°C
0.10
0.5
0.6
0.7
0.8
0.9
VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Figure 15. Non repetitive surge peak forward current versus number of cycles 30
IFSM(A) F=50Hz
Tj initial=25°C
25 20 15 10 5
Number of cycles 0
1
10
100
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Package Information
2
1N5817, 1N5818, 1N5819
Package Information ●
Epoxy meets UL94, V0
●
Band indicates cathode
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5.
DO-41 (Plastic) dimensions Dimensions Ref.
3
Max.
Min.
Max.
A
4.07
5.20
0.160
0.205
B
2.04
2.71
0.080
0.107
C
25.4
D
0.71
0.86
0.028
0.034
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
1N581x
Part number cathode ring
DO-41
0.34 g
2000
Ammopack
1N581xRL
Part number cathode ring
DO-41
0.34 g
5000
Tape and reel
Revision history Table 7.
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1
Ordering information Table 6.
4
C
A
Inches
Min.
ØD ØB
C
Millimeters
Document revision history
Date
Revision
Jul-2003
4A
04-Jul-2011
5
Changes Last update. Updated Table 5.: DO-41 (Plastic) dimensions.
Doc ID 6262 Rev 5
1N5817, 1N5818, 1N5819
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