Transcript
CEA-LETI TECHNOLOGIES
AND MPW ACTIVITY FOR SOI310NM / BOX 800NM Maryse Fournier André Myko 10/22/2015
Our research fields CEA LETI: 1700 researchers (190 PhD), 2200 patents (40% licensed), 250 M€/year → Nanocharacterization platform, 300 mm and 200 mm lines for nanoelectronics, MEMS, 3D integration, photonics → 8000 m² of clean rooms
Embedded systems Integration
Chemistry Photonics
Micro and nanoelectronics
Nanocharacterization
Clinatec
CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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Roadmap for photonics Goal •
Offer more traffic capacity (at ever level of the communication channel)
How this can be done •
Offer high-speed optical links for shorter distances.
What has to be done • •
Reduce device cost and consumption. Integrate more functions on chip.
Driver •
Short distance links is a high-volume market
Telecom 1km à 100km
DataCom 1m à 2km
C-Band : 1.55µm
O-Band : 1.31µm big volume
ComputerCom <1m
CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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Our Means
Close partnership with STm, III-V Lab,… Supporting you from design to prototyping of devices,integrated circuits and packaging solutions.
Optical and RF Packaging
& Test
Supporting you in setting up your supply chain. CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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Basic building blocks (top view) Microbumps
Optical modulator
Si Chip
Si-IP
Laser source
Photodetector
WDM filters
Ring modulator
Waveguides
Fiber coupler
Vivien, L. et al., ECS Transactions 2014 , Fedeli et al., GFP 2014, L. Virot et al., Nature Communications, 2014, K. Hassan et al., Opt. Lett. 40(11), 2015, C. Sciancalepore, et al., IEEE Photon. Technol. Lett., 2014, Ben Bakir B. et al., ECS 2014, Duprez et al., OFC 2014 CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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Basic building blocks (cross section) Ge PHOTODIODE + Si MODULATOR
PASSIVE + HEATER
2-level BEOL
Rib/Strip waveguides
Si modulator
Ge photodiode
III-V LASER INTEGRATION
BEOL WITH µ-BUMPS
Copperpillar CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
EIC/PIC stack | PAGE 6
Design tool environment & circuit development DRM including packaging rules, library and photonic design Kit Development of a reference PDK containing all layout information
Building the library : component modeling Creation of component analytical models based on measured behavior Parameterization of these models by final user to fit with design constraints Design
Measurement fitting
Fabrication
Characterization
From simple components… to complete integrated systems Putting things together : simulation of complete circuit, design rule checking and tapeout
Laser source
multiplexer
Simulation with user-friendly interfaces Our libraries are compatible with CADENCE IDE using the Eldo simulator and with ASPIC from the Phoenix software suite
Ring modulator
Optical receptors
[1] P. Martin et all “Modeling of Silicon Photonics Devices with Verilog-A”, MIEL 2014
CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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MODEL EXAMPLE Ring modulator model
Parameters extraction
Parameters extraction
Microring Modulator Model
Electrical I-V
(Vt , R, I S , n)
Parameters extraction
Δλr ( A,Q ,
r
Electro-optic Modulation: ( A,Q , r ) as functions of I
a( 1 b I 1) c I 2
Y axis
r ,total
Optical
X axis
*Compact models for carrier-injection silicon microring modulators, OSA 2015 RuiWu1;2;, Chin-Hui Chen2, Jean-Marc Fedeli3, Maryse Fournier3, Kwang-Ting Cheng1, and Raymond G. Beausoleil2
CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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)
WAFER LEVEL TESTING
Our probe testers enablesto make quick wafer-level testing, shortening the path to production: 200mm and 300mm ▸ ▸ ▸ ▸
200mm and 300mm Electro-Optical Tests up to 67Ghz Temperature Tests up to 90°C Test automation with wafer mappings CEA/LETI/DOPT/SCOOP/MARYSE FOURNIER, ANDRE MYKO
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LETI Tecchnology through EUROPRACTICE IC
| PAGE 10 CEA/LETI/DOPT/SCOOP/Maryse Fournier
OFFER
NEW MPW 2 OFFERS ON SOI310NM / BOX 800NM =1.31 µm TE mode
Si310-P or Si310-PH
Shallow Rib WG
Passive structures ( 3 mask layers DUV 193nm) CD min 120nm 300nm /150nm 150nm /0 Optional Slab 65nm Passivation The oxide thickness is fixed for a compromise between optical losses generated by the Ti/TiN layer and thermal tuning efficiency.
TiN Heater layer Tungsten Plugs 1 Metallization for routing Packaging Friendly
New platform brings higher performance for grating couplers
New library for
=1.31 µm and
=1.55 µm TE mode
http://www.europractice-ic.com SiPhotonics_technology_LETI_passives_w_heater.php CEA/LETI/DOPT/SCOOP/MARYSE FOURNIER
CEA/LETI/DOPT/SCOOP/MARYSE FOURNIER, ANDRE MYKO
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NEW MPW OFFER ON SOI310NM / BOX 800NM
Intensity (a. u.)
=1.31 µm TE mode
Tape out through Europractice IC:
• Q1 2016 • Q4 2016
March 15th October 18th
9.00E-007 8.50E-007 8.00E-007 7.50E-007 7.00E-007 6.50E-007 6.00E-007 5.50E-007 5.00E-007 4.50E-007 4.00E-007 3.50E-007 3.00E-007 2.50E-007 2.00E-007 1.50E-007 1.00E-007 5.00E-008 0.00E+000
=3nm/10mW
Group B #8 P0mW Group B #8 P2mW Group B #8 P4mW Group B #8 P6mW Group B #8 P8mW Group B #8 P10mW
1526 1528 1530 1532 1534 1536 1538 1540 1542 1544
Wavelength (nm)
http://www.europractice-ic.com SiPhotonics_technology_LETI_passives_w_heater.php
Devices Performance
Coupler 1D
IL < 2.5 dB loss
CEA/LETI/DOPT/SCOOP/MARYSE FOURNIER
Coupler 2D
Monomode Rib waveguide W400nm
Multimode Rib Waveguide
Thermal efficiency
IL < 4,5 dB loss
Losses: < 2.5 dB/cm
Losses: < 0.3 dB/cm
0,5 > TE > 0,2 nm/mW
CEA/LETI/DOPT/SCOOP/MARYSE FOURNIER, ANDRE MYKO
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I/O COUPLING TO FIBERS 1310nm (SOI 300nm) small footprint focusing 1D/2D couplers Insertion loss : 2 dB for 1D / <4 dB for 2D BW@-1dB: 27nm Reflection at input <20dB 2D grating coupler
-1
-1
-2
-2
-3
-3
insertion loss (dB)
insertion loss (dB)
1D grating coupler
-4 -5 -6 -7 -8 1280
-4 -5 -6 -7
1290
1300 1310 lambda (nm)
1320
-8 1330 1280
1290
1300 1310 lambda (nm)
1320
[1] Fowler et al., "Influence of minimal critical dimension on the efficiency of SOI apodized grating couplers" CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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1330
PASSIVE + HEATER MPW OFFER
THERMAL TUNING ELEMENT A way towards closed loop operation
Thermal tuning efficiency depends on: Material volume to be heated Thermal coupling efficiency Expected time response Low power implies: Integration Scaling down active areas
SEM micrography
Thermal efficiency minimum 0.2nm/mW up to 0.475nm/mw strong dependence of the design CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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LETI OFFER
FROM 2016 | PAGE 15 CEA/LETI/DOPT/SCOOP/Maryse Fournier
GLOBAL LETI MPW OFFER ON NEW SOI PLATFORM
=1.31 µm TE mode Passives components
Heaters
+ Coupler 1D IL < -2.5 dB loss
+
+ Si310PHMP2M
Thermal efficiency: 0,5 > TE >0,2 nm/mW
Monomode Rib waveguide : Losses: < 2.5dB/cm
Multimode Rib Waveguide:
Carrier depletion PN MZ Modulator
Lateral Ge PIN diode
Si310-PH
Coupler 2D IL < -4,5 dB loss
Losses: < 0.3dB/cm
(310nm /800nm)
Sheet resistance: 5 ,5 ohm / Sq
Sign in Q1 or Q4 2016 through Europractice IC
Responsivity: > 0.75A/W Dark current: < 10nA @ -1 V Bandwith -3dB in S21 @ -1V : 30 GHz
Vpi.Lpi < 2,5 V.cm Prop Loss < 2 dB/mm Data Rate up to 25Gbps
Si310-PHMP2M sign in 2016
Very high performance building blocks for =1.31 µm and =1.55 µm Compatible Photonics and process 3D from CEA-LETI for Electronics integration PDKs available via Cadence, Phoenix software, and Mentor Graphics Technology compatible design rules with 300 mm industrial foundry* *
CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko | PAGE 16 A 40 Gbit/s optical link on a 300-mm silicon platform D Marris-Morini et Al. 2014 Optics express
BUILDING BLOCK [BB] AVAILABLE WITH INDICATIVE PERFORMANCES Device Straight strip waveguide Crossing RIB Crossing STRIP Bend strip waveguide Straight rib waveguide Transition RIB/STRIP Transition STRIP/RIB Multimode interferometer 1x2 Fiber grating coupler 1D
Fiber grating coupler 2D
Ring filter
Specification
Loss Loss Loss Loss Loss
Value <4 dB/cm (W=350nm)
Loss Loss Loss Insertion loss Peak wavelength @ 11.5° in air 1dB bandwidth Insertion loss Peak wavelength @ 11.5° in air 1dB bandwidth
0.015 dB/90° (R=5µm) <2.5 dB/cm (W=400nm) 0.25 dB/cm (W=1.8µm) <0.05 dB <0.05 dB <0.5 dB <2.5 dB 1310nm 30nm <4 dB 1310nm 30nm
Quality factor Free Spectral Range nm/mW (heater) loss
12000 6.6 nm 0.4 <0.5 dB
or design your own BB with robustness in accordance with our Design Rule Manual
Parametric ?
Yes No No Yes Yes No No No No
No
yes
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BUILDING BLOCK [BB] AVAILABLE WITH INDICATIVE PERFORMANCES Device Germanium photodiode
MZI modulator
Ring modulator
Specification OE bandwidth @ -1V Responsivity @1310nm, -1V Dark current @ -1V, 20°C EO bandwidth @ -2V Length Insertion loss Vpi @ -2V EO bandwidth @ -2V DC Insertion loss Vpp RF @ -2V DC ER RF ER
Value > 30 GHz 0.75 A/W < 10 nA > 20 GHz 4 mm < 8 dB 5V 15 GHz < 0.5 dB 0.8 V 18 dB 3.5dB
Parametric? Yes
Yes
Yes
or design your own BB with robustness in accordance with our Design Rule Manual | PAGE 18
MACH ZEHNDER MODULATOR 1310nm (SOI300nm) PN junction MZM (4mm-long)
[email protected] : 28GHz@2mm, 23GHz@4mm Phase shift : 19°/mm (2.4 V.cm)
Vpi.Lpi < 2,5 V.cm Prop Loss < 2 dB/mm Data Rate up to 25Gbps T. Ferroti et al., Photonics West 2015
CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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Ge-based PHOTODETECTION Lateral PIN photodiode • • •
Responsivity > 0.6A/W Dark current < 100nA@20°C Bandwidth up to 40GHz
[1] J.M. Fedeli et al. , ISTDM, 2014 [2] L. Virot et al., Nature Communications, 2014
Avalanche Photodiode • •
Gain : 17 @ 6V Bandwidth : 11GHz
CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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NEW MPW OFFER =1.31 µm TE mode =1.55 µm
NEW SOI 310nm PLATFORM!
Full platform
SOI substrate HR BOX 800nm / Si 310 nm
CEA
Passive structures ( 3 mask layers DUV 193nm) CD min 120nm 300nm /150nm 150nm /0 Optional Slab 65nm
MPW offer available from 2016
+
Heater layer
CEA – LETI OPEN 3D MPW offer via CMP Broker
Germanium PD’s fabrication n and p implant level
available
MZ and RR Modulators
=
(2 n level and 2 p level implants ) Silicidation Tungsten Plugs for interconnection 2 level of AlCu Metallization for routing
[OFC, 2015]
Photonics and electronics integration Available from 2016 ie FABULOUS EU FP7 Project, 2014
CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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EXEMPLES OF FULL INTEGRATION
Eye pattern at 25Gb/s
CEA/LETI/DOPT/SCOOP/Maryse Fournier, Andre Myko
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MEET US:
us
At Europractice training on Nov 16-20 2015
CEA/LETI/DOPT/SCOOP/MARYSE FOURNIER, ANDRE MYKO
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THANK YOU FOR YOUR ATTENTION Contact:
[email protected] [email protected] http://www-leti.cea.fr/en/How-tocollaborate/Collaborating-with-Leti/Integratedsilicon-photonics
| PAGE 24 CEA/LETI/DOPT/SCOOP/Maryse Fournier
Commissariat à l’énergie atomique et aux énergies alternatives T. +33 (0)438780244 Etablissement public à caractère industriel et commercial | R.C.S Paris B 775 685 019
Direction: DRT Département DOPT Service SCOOP
