Transcript
CLA60MT1200NHR
High Efficiency Thyristor
VRRM
=
1200 V
I TAV
=
30 A
VT
=
1,25 V
Three Quadrants operation: QI - QIII 1~ Triac Part number
CLA60MT1200NHR
Backside: isolated
Three Quadrants Operation T2
Positive Half Cycle +
(-) IGT
T2
(+) IGT T1 REF
IGT -
2
T2
T1
QII QI QIII QIV
REF + IGT
(-) IGT
3 1
T1 REF
Negative Half Cycle
Note: All Polarities are referenced to T1
Features / Advantages:
Applications:
Package: ISO247
● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages
● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling
Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827d
CLA60MT1200NHR Ratings
Rectifier Conditions
Symbol VRSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
VRRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1200
I R/D
reverse current, drain current
VT
forward voltage drop
TVJ = 25°C
10
µA
2
mA
TVJ = 25°C
1,28
V
1,56
V
1,25
V
IT =
30 A
IT =
60 A
IT =
30 A
IT =
60 A
I RMS
RMS forward current per phase
180° sine
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
TVJ = 125 °C
for power loss calculation only
thermal resistance case to heatsink total power dissipation
I TSM
max. forward surge current
value for fusing
V
TVJ = 125°C
TC = 100 °C
RthCH
max. Unit 1300 V
VR/D = 1200 V
average forward current
Ptot
typ.
VR/D = 1200 V
I TAV
I²t
min.
1,61
V
T VJ = 150 °C
30
A
66
A
TVJ = 150 °C
0,86
V
12,5
mΩ
0,9 K/W K/W
0,25 TC = 25°C
140
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
380
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
410
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
325
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
350
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
720
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
700
A²s
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
530
A²s
510
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
CJ
junction capacitance
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 150 °C
25
t P = 300 µs PGAV
average gate power dissipation
(di/dt) cr
critical rate of rise of current
TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0,3 A/µs;
90 A
IG =
30 A
(dv/dt)cr
critical rate of rise of voltage
V = ⅔ VDRM
VGT
gate trigger voltage
I GT
gate trigger current
VGD
gate non-trigger voltage
I GD
gate non-trigger current
IL
latching current
0,3 A; V = ⅔ VDRM
non-repet., I T =
pF 10
W
5
W
0,5
W
150 A/µs 500 A/µs
TVJ = 150°C
500 V/µs
VD = 6 V
TVJ = 25 °C
1,7
TVJ = -40 °C
1,9
V
VD = 6 V
TVJ = 25 °C
± 60
mA
TVJ = -40 °C
± 80
mA
TVJ = 150°C
0,2
V
±1
mA
TVJ = 25 °C
90
mA
R GK = ∞; method 1 (linear voltage rise)
VD = ⅔ VDRM tp =
10 µs
IG =
0,3 A; di G /dt =
V
0,3 A/µs
IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
60
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG =
0,3 A; di G /dt =
0,3 A/µs
VR = 100 V; I T = 30 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
150
µs
20 V/µs t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827d
CLA60MT1200NHR Package
Ratings
ISO247
Symbol I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max. 70
Unit A
-55
150
°C
-55
125
°C
150
°C
6
Weight MD
mounting torque
FC
mounting force with clip
d Spp/App
terminal to terminal
creepage distance on surface | striking distance through air
terminal to backside
d Spb/Apb VISOL
t = 1 second
isolation voltage
t = 1 minute
Product Marking
Logo Part Number DateCode Assembly Code
50/60 Hz, RMS; IISOL ≤ 1 mA
g
0,8
1,2
Nm
20
120
N
2,7
mm
4,1
mm
3600
V
3000
V
Part description C L A 60 MT 1200 N HR
abcdef
= = = = = = = =
Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] 1~ Triac Reverse Voltage [V] Three Quadrants operation: QI - QIII ISO247 (3)
YYWWZ 000000
Assembly Line
Ordering Standard
Ordering Number CLA60MT1200NHR
Similar Part CLA60MT1200NHB CLA60MT1200NTZ
Equivalent Circuits for Simulation I
V0
R0
Package TO-247AD (3) TO-268AA (D3Pak)
* on die level
Delivery Mode Tube
Quantity 30
Code No. 513282
Voltage class 1200 1200
T VJ = 150 °C
Thyristor
V 0 max
threshold voltage
0,86
R0 max
slope resistance *
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Marking on Product CLA60MT1200NHR
V mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827d
CLA60MT1200NHR Outlines ISO247 A
E
A2 A3
2x E3
ØP
2x D3
S
Q
Millimeter min max A 4.70 5.30 A1 2.21 2.59 A2 1.50 2.49 A3 typ. 0.05 b 0.99 1.40 b2 1.65 2.39 b4 2.59 3.43 c 0.38 0.89 D 20.79 21.45 D1 typ. 8.90 D2 typ. 2.90 D3 typ. 1.00 E 15.49 16.24 E1 typ. 13.45 E2 4.31 5.48 E3 typ. 4.00 e 5.46 BSC L 19.80 20.30 L1 4.49 Ø P 3.55 3.65 Q 5.38 6.19 S 6.14 BSC
Dim.
D D1
2x E2
4 1
2
3
D2
L1 E1 L
2x b2 3x b
C
b4
A1
2x e
Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 typ. 0.002 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.819 0.844 typ. 0.350 typ. 0.114 typ. 0.039 0.610 0.639 typ. 0.530 0.170 0.216 typ. 0.157 0.215 BSC 0.780 0.799 0.177 0.140 0.144 0.212 0.244 0.242 BSC
2
3 1
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827d
CLA60MT1200NHR Thyristor 60
400
1000
VR = 0 V
50 40
300
IT
ITSM
TVJ = 45°C
30
[A]
[A] 20
TVJ = 45°C
2
It [A2s]
TVJ = 125°C
200 TVJ = 125°C
10
TVJ = 125°C
TVJ = 150°C 0 0,0
TVJ = 25°C
0,5
1,0
1,5
50 Hz, 80% VRRM
100 2,0
0,01
100
0,1
VT [V]
1
1
t [s]
Fig. 3 I t versus time (1-10 s)
80
1: IGD, TVJ = 150°C
70
2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C
1
56
1 4
50
tgd
IT(AV)M
[µs]
[A]
40 10
5: PGM = 5 W 6: PGM = 10 W
lim.
100
1000
10000
40
0
40
80
120
160
Tcase [°C]
Fig. 5 Gate controlled delay time tgd
Fig. 6 Max. forward current at case temperature
1,0
dc = 1 0.5 0.4 0.33 0.17 0.08
P(AV)
1000
IG [mA]
Fig. 4 Gate voltage & gate current
50
0
100
IG [mA]
60
10
typ.
1 10
0,1 10
30 20
4: PGAV = 0.5 W
1
dc = 1 0.5 0.4 0.33 0.17 0.08
60
TVJ = 125°C
100
23
[V]
4 5 6 7 8 910
t [ms]
1000
10
3
2
Fig. 2 Surge overload current ITSM: crest value, t: duration
Fig. 1 Forward characteristics
VG
2
RthHA 0.6 0.8 1.0 2.0 4.0 8.0
0,8
0,6
30
ZthJC
[W]
i Rthi (K/W) 1 0.080 2 0.060 3 0.200 4 0.210 5 0.350
0,4
20
[K/W] 0,2
10 0
ti (s) 0.0100 0.0001 0.0400 0.2500 0.1500
0,0 0
10
20
30
40 0
IT(AV) [A]
50
100
150
Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
1
10
100
1000
10000
t [ms]
Tamb [°C]
Fig. 7 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827d
