Transcript
CM1000E3U-34NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Mega Power Chopper IGBTMOD™ 1000 Amperes/1700 Volts
TC MEASURED POINTS (BASEPLATE SIDE)
A D G
U
L
H H
K
W
C2E1
AC
S
C2
C1
G2
E1
E2
G1
AB
X J
Y CB Z
T J E2
E
Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverseconnected super-fast recovery free-wheel diode and an anodecollector connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
F
C1
U V
F
H H H H H H G G
AA L
R (9 PLACES) M
LABEL
P
C2 G2 E2 C2E1
C1 E2
FREE-WHEEL DIODE
C1 (NC) G1 (NC)
CLAMP DIODE
E1 (NC)
Outline Drawing and Circuit Diagram Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
M
0.075±0.008
1.9±0.2
A
5.91
150.0
B
5.10
129.5
P
1.0
25.1
M6 Metric
M6
C
1.67±0.01
42.5±0.25
R
D
5.41±0.01
137.5±0.25
U
0.62
15.7
0.71
18.0
E
6.54
166.0
V
F
2.91±0.01
74.0±0.25
W
0.75
19.0
0.43
11.0
G
1.65
42.0
X
H
0.55
14.0
Y
0.83
21.0
0.41
10.5
J
1.50±0.01
38.0±0.25
Z
K
0.16
4.0
AA
0.22
5.5
AB
0.47
12.0
AC
0.08
2.0
L
1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD) S = VHR-2N T = VHR-5N 04/09
Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ High Power DC Power Supply £ Large DC Motor Drives £ Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM1000E3U-34NF is a 1000V (VCES), 1700 Ampere Chopper IGBTMOD Power Module. Type
Current Rating Amperes
VCES Volts (x 50)
CM
1000
34 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1000E3U-34NF Mega Power Chopper IGBTMOD™ 1000 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings
Symbol
CM1000E3U-34NF
Units
Tj
-40 to 150
°C
Junction Temperature Storage
Temperature*7
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1700
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
Collector Current DC (TC = 104°C)*6
IC
1000
Amperes
Peak Collector Current (Pulse)*2
ICM
2000
Amperes
Emitter Current (TC = 25°C)*4
IE*1
75
Amperes
Peak Emitter Current
(Pulse)*2
*1
IEM
150
Amperes
Maximum Collector Dissipation (TC = 25°C)*2*4
PC
3900
Watts
Mounting Torque, M6 Mounting Screws (Max.)
–
40
in-lb
Mounting Torque, M6 Main Terminal Screw (Max.)
–
40
in-lb
Weight (Typical) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
–
1400
Grams
Viso
3500
Vrms
Clamp Diode Part, Tj = 25°C unless otherwise specified Repetitive Peak Reverae Voltage
VRRM
1700
Volts
Forward Current (TC = 25°C)*4
IF
1000
Amperes
Peak Forward Current (Pulse)*2
IFM
2000
Amperes
*1 IE, IEM, and VEC represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) is baseplate side. *6 Case temperature (TC') and heatsink temperature (Tf') measured point is just under the chips. *7 The operation temperature is restrained by the permission temperature of female connector housing.
Chip Location (Top View) Diode
0
98.6
Clamp Diode
39.2 48.4 46.6
IGBT
0
0 10.6
10.5
23.2
23.4
35.8
36.2
52.2
52.0
64.8
64.8
77.4
77.7
106.4
118.8
119.2
51.4
48.4
93.5
0
93.6 106.2
2
Dimensions in mm (Tolerance: ±1mm)
04/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1000E3U-34NF Mega Power Chopper IGBTMOD™ 1000 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
1
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
–
–
0.5
μA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 100mA, VCE = 10V
5.5
7
8.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 1000A, VGE = 15V, Tj = 25°C*3
–
2.2
2.8
Volts
(Without Lead Resistance)
(Chip)
IC = 1000A, VGE = 15V, Tj = 125°C*3
–
2.45
–
Volts
Module Lead Resistance
R(lead)
IC = 1000A, Terminal-Chip
–
0.286
–
mΩ
–
–
220
nF
VCE = 10V, VGE = 0V
–
–
25
nF
–
–
4.7
nF
–
6000
–
nC
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
VCC = 1000V, IC = 1000A, VGE = 15V
Turn-on Delay Time
td(on)
VCC = 1000V, IC = 1000A,
–
–
600
ns
Turn-on Rise Time
tr
VGE = ±15V,
–
–
150
ns
Turn-off Delay Time
td(off)
RG = 0.47Ω,
–
–
900
ns
tf
Inductive Load
–
–
200
ns
Turn-off Fall Time Voltage*1
VEC
External Gate Resistance
RG
Emitter-Collector
IE = 75A, VGE =
0V*3
–
–
2.8
Volts
0.47
–
4.7
Ω
Typ.
Max.
Clamp Diode Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Units
Repetitive Peak Reverse Current
IRRM
VR = VRRM
–
–
1
mA
Forward Voltage
VFM
IF =1000A*3
–
–
3.0
Volts
Reverse Recovery Time
trr
IF =1000A
–
–
450
ns
Reverse Recovery Charge
Qrr
IF =1000A
–
90
–
μC
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol Case*4
Thermal Resistance, Junction to Case*4 Case*6
Thermal Resistance, Junction to Case*6
Thermal Resistance, Junction to Thermal Resistance, Junction to Thermal Resistance, Junction to Contact Thermal Resistance*6
Case*4
Test Conditions
Min.
Typ.
Max.
Rth(j-c)Q
IGBT
–
–
0.032
°C/W
Rth(j-c)D
Clamp
–
–
0.053
°C/W
Rth(j-c')Q
IGBT
–
–
0.014
°C/W
Rth(j-c')D
Clamp
–
–
0.023
°C/W
Module*5
–
0.016
–
°C/W
Thermal Grease Applied per 1/2 Module*5
–
0.012
–
°C/W
Rth(c-f)D Rth(c-f)
Thermal Grease Applied per 1/2
Units
*1 IE, IEM, and VEC represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *3 Pulse width and repetition rate should be such as to cause negligible temperature rise. *4 Case temperature (TC) is baseplate side. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *6 Case temperature (TC') and heatsink temperature (Tf') measured point is just under the chips.
04/09
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1000E3U-34NF Mega Power Chopper IGBTMOD™ 1000 Amperes/1700 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
2000
VGE = 20V
15
1600
12
13
1200 11
800 400
10
9
8
0
0
2
4
6
8
1600 1200
0
4
8
12
16
4 3 2 1 0
20
0
400
800
1200
1600
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
104
103
4
IC = 2000A
IC = 1000A
2
0
4
8
12
16
2.0
2.5 3.0
3.5
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
104
tr
VCC = 1000V VGE = ±15V RG = 0.47Ω Tj = 125°C Inductive Load
103 COLLECTOR CURRENT, IC, (AMPERES)
104
REVERSE RECOVERY TIME, trr, (ns)
td(off)
103
trr
102 102
103 EMITTER CURRENT, IE, (AMPERES)
Cres
100
100
101
102
GATE CHARGE, VGE
Irr VCC = 1000V VGE = ±15V RG = 0.47Ω Tj = 25°C Inductive Load
Coes
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
104
103
101
10-1 10-1
4.0
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
tf
101 102
1.5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
td(on)
102
Tj = 25°C Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
104
103
103
102 0.5 1.0
20
CAPACITANCE, Cies, Coes, Cres, (nF)
IC = 400A
Cies
102
102 104
20 GATE-EMITTER VOLTAGE, VGE, (VOLTS)
6
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
8
2000
VGE = 0V
Tj = 25°C EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
400
VGE = 15V Tj = 25°C Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0
SWITCHING TIME, (ns)
800
0
10
10
4
5
VCE = 10V Tj = 25°C Tj = 125°C
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25°C COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
2000
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
IC = 1000A
16
VCC = 800V VCC = 1000V
12 8 4 0
0
2000
4000
6000
8000 10000
GATE CHARGE, QG, (nC)
04/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
10-3
10-2
10-1
100
101
10-1 Single Pulse TC = 25°C Per Unit Base Rth(j-c') = 0.014°C/W (IGBT) Rth(j-c') = 0.023°C/W (Clamp)
10-2
10-3
10-5
10-4
104
SWITCHING ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL)
REVERSE RECOVERY ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) REVERSE RECOVERY ENERGY, Err, (mJ/PULSE)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
103 COLLECTOR CURRENT, IC, (AMPERES)
VCC = 1000V VGE = ±15V Tj = 125°C IC = 1000A Eon Eoff Inductive Load
1
2
3
4
EXTERNAL GATE RESISTANCE, RG, (Ω)
04/09
VCC = 1000V VGE = 15V Tj = 125°C RG = 0.47Ω Eon Eoff Inductive Load
101
TIME, (s)
102
0
102
100 102
10-3
103
101
SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 3 10
5
REVERSE RECOVERY ENERGY VS. FORWARD CURRENT (TYPICAL) REVERSE RECOVERY ENERGY, Err, (mJ/PULSE)
100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & CLAMP DIODE)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
CM1000E3U-34NF Mega Power Chopper IGBTMOD™ 1000 Amperes/1700 Volts
103
102
101
100 102
VCC = 1000V VGE = 15V Tj = 125°C RG = 0.47Ω Inductive Load
103
104
FORWARD CURRENT, IF, (AMPERES)
103
102
101
VCC = 1000V VGE = ±15V Tj = 125°C IC = 1000A Inductive Load
0
1
2
3
4
5
EXTERNAL GATE RESISTANCE, RG, (Ω)
5
