Transcript
CM100DUS-12F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts
P - NUTS x Z DEEP (3 PLACES) TC MEASURED POINT A N
D Q (2 PLACES)
Y C2E1
E2
E
C1 E2G2
CM
W
F G
X G1E1
B
M
K
K V
T
R
J #110 TAB x H THICK (4 PLACES)
T U
U
Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
F
S C
L
G2 E2 RTC C2E1 E2
C1
Features: £ Low VCE(sat) £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking
RTC E1 G1
Outline Drawing and Circuit Diagram Dimensions
Inches
A
3.70
94.0
N
0.28
7.0
B
1.89
48.0
P
M5
M5
C
Millimeters
1.18 +0.04/-0.02 30.0 +1.0/-0.5 80.0±0.25
Dimensions
Inches
Q
0.26 Dia.
R
0.02
Millimeters
6.5 Dia.
D
3.15±0.01
4.0
E
0.43
11.0
S
0.30
7.5
F
0.16
4.0
T
0.63
16.0
G
0.71
18.0
U
0.10
2.5
H
0.02
0.5
V
1.0
25.0
Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100DUS-12F is a 600V (VCES), 100 Ampere Dual IGBTMOD™ Power Module.
J
0.53
13.5
W
0.94
24.0
K
0.91
23.0
X
0.51
13.0
Type
Current Rating Amperes
VCES Volts (x 50)
L
0.83
21.2
Y
0.47
12.0
CM
100
12
M
0.67
17.0
Z
0.47
12.0
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DUS-12F Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings
Symbol
CM100DUS-12F
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
Collector Current (Tc = 25°C)
IC
100
Amperes
ICM
200*
Amperes
IE
100
Amperes
Peak Emitter Current**
IEM
200*
Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)
Pc
350
Watts
Mounting Torque, M5 Main Terminal
–
31
in-lb
Mounting Torque, M6 Mounting
–
40
in-lb
Weight
–
310
Grams
Viso
2500
Volts
Peak Collector Current Emitter Current** (Tc = 25°C)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
1
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V
–
–
20
μA
5
6
7
Volts
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Saturation Voltage
VCE(sat)
Units mA
IC = 100A, VGE = 15V, Tj = 25°C
1.7
2.0
2.7
Volts
IC = 100A, VGE = 15V, Tj = 125°C
–
1.95
–
Volts
–
nC
Total Gate Charge
QG
VCC = 300V, IC = 100A, VGE = 15V
–
620
Emitter-Collector Voltage**
VEC
IE = 100A, VGE = 0V
–
–
2.6
Test Conditions
Min.
Typ.
Max.
–
–
VCE = 10V, VGE = 0V
–
–
–
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
1.8
nf nf
–
1
nf
–
–
100
ns
tr
VCC = 300V, IC = 100A, VGE1 = VGE2 = 15V,
–
–
80
ns
td(off)
RG = 6.3Ω, Inductive
–
–
300
ns
tf
Load Switching Operation
–
–
150
ns
Diode Reverse Recovery Time**
trr
IE = 100A
–
–
150
ns
Diode Reverse Recovery Charge**
Qrr
–
1.9
–
µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
27
Units
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DUS-12F Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Thermal Resistance, Junction to Case
Test Conditions
Rth(j-c)Q
Min.
Per IGBT 1/2 Module, Tc Reference
Typ.
Max.
–
Units
0.35
°C/W
Point per Outline Drawing Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module, Tc Reference
–
–
0.70
°C/W
–
0.23**
–
°C/W
–
0.07
–
°C/W
Point per Outline Drawing Thermal Resistance, Junction to Case
Rth(j-c')Q
Per IGBT 1/2 Module, Tc Reference Point Under Chip
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
** If you use this value, Rth(f-a) should be measured just under the chips.
Tj = 25°C
13 15
160
9
VGE = 20V
120
8
80
7.5
40 0
101
10 9.5 8.5
11
SWITCHING LOSS, ESW, (mJ/PULSE)
7
0
1
2
3
101
2.0 1.5 1.0 0.5 0
102
VGE = 15V Tj = 25°C Tj = 125°C
2.5
0
40
80
120
160
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
103
5 4 3
IC = 200A IC = 100A
2
IC = 40A
1 0
6
8
10
102
Tj = 25°C
Tj = 25°C EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
100
10-1 100
4
3.0
VCC = 300V VGE = 15V RG = 6.3 Ω Tj = 125C HALF-BRIDGE SWITCHING ESW(on) ESW(off)
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
CAPACITANCE, Cies, Coes, Cres, (nF)
COLLECTOR CURRENT, IC, (AMPERES)
200
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS (TYPICAL)
102
101
100 0.5
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
200
VGE = 0V f = 1MHz Cies
101
100 Coes Cres
10-1 10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DUS-12F Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
td(on)
101
tr
100 100
101
trr Irr
100 100
102
101
100 102
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL)
101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE)
REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE)
101
COLLECTOR CURRENT, IC, (AMPERES)
100 VCC = 300V VGE = 15V RG = 6.2 Ω Tj = 125°C Inductive Load C Snubber at Bus
10-1 101
102
103
EMITTER CURRENT, IE, (AMPERES)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
Irr
101
101
10-3 101
100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-2
10-1
100
101
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.7°C/W
10-1
10-2
10-2
10-5 TIME, (s)
10-4
100
10-1 100
101
10-3 10-3
IC = 100A
16 VCC = 200V
12
VCC = 300V
8 4 0
0 100 200 300 400 500 600 700 800 900 GATE CHARGE, QG, (nC)
VCC = 300V VGE = 15V IC = 100A Tj = 125°C Inductive Load C Snubber at Bus
GATE RESISTANCE, RG, ()
10-1
10-3
4
trr
20 GATE-EMITTER VOLTAGE, VGE, (VOLTS)
tf
VCC = 300V VGE = 15V RG = 6.3 Ω Tj = 125°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
td(off)
GATE CHARGE, VGE
102
102
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
102
VCC = 300V VGE = 15V RG = 6.3 Ω Tj = 125°C
102 REVERSE RECOVERY TIME, trr, (ns)
SWITCHING TIME, (ns)
103
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
10-3 101
100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS ( IGBT)
10-2
10-1
100
101
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.35°C/W
10-1
10-1
10-2
10-2
10-3
10-5 TIME, (s)
10-4
10-3 10-3
