Transcript
MITSUBISHI IGBT MODULES
CM100TL-24NF HIGH POWER SWITCHING USE
CM100TL-24NF
¡IC ................................................................... 100A ¡VCES ......................................................... 1200V ¡Insulated Type ¡6-elements in a pack
APPLICATION AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
L A B E L 11
120 106 ±0.5
7 40.78
17
2-φ5.5 MOUNTING HOLES
17
12
13.62
UP
VP
1
1
CN
55
35
WP
N
12 23
12 23
32
12 23
23.2
12 22
11.75
(13.5)
12 12 (SCREWING DEPTH)
+1
W
10.75 (19.75)
22 –0.5
B V
16
8 U
3
1
6-M5 NUTS
1
P
A B
Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B
P
B CN-7 CN-8 N
NC NC NC
UP-1 UP-2
VP-1 VP-2 U
CN-5 CN-6
WP-1 WP-2 W
V CN-3 CN-4
CN-1 CN-2
CIRCUIT DIAGRAM
Jun. 2004
MITSUBISHI IGBT MODULES
CM100TL-24NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — —
Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight
Conditions G-E Short C-E Short DC, TC = 80°C*1 Pulse
Ratings 1200 ±20 100 200 100 200 620 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350
(Note 2)
Pulse TC = 25°C
(Note 2)
Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value
Unit V V A A A A W °C °C V N•m N•m g
ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol
Parameter
Test conditions
Limits Typ. —
Max. 1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min. —
VGE(th)
Gate-emitter threshold voltage
IC = 10mA, VCE = 10V
6
7
8
V
IGES
Gate leakage current
VGE = VGES, VCE = 0V
— — — — — — — — — — — — — — — — — 3.1
— 2.1 2.4 — — — 500 — — — — — 4.8 — — — 0.085 —
0.5 3.0 — 17.5 1.5 0.34 — 100 70 300 350 150 — 3.8 0.20 0.28 — 42
µA
VCE(sat)
Collector-emitter saturation voltage
Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance
IC = 100A, VGE = 15V
Tj = 25°C Tj = 125°C
VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE1 = VGE2 = 15V RG = 3.1Ω, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to fin, Thermal compound Applied (1/6 module)*2
mA
V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W Ω
*1 : Tc measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Jun. 2004
MITSUBISHI IGBT MODULES
CM100TL-24NF HIGH POWER SWITCHING USE
PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
13 12
100 11 50
10 9 0
2
4
6
8
4
VGE = 15V
3
2
1 Tj = 25°C Tj = 125°C 0
10
0
50
100
150
200
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
10
103
Tj = 25°C
8
6
4 IC = 200A IC = 100A
2
EMITTER CURRENT IE (A)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
Tj = 25°C
15
150
0
CAPACITANCE Cies, Coes, Cres (nF)
VGE = 20V
IC = 40A 0
6
8
10
12
14
16
18
7 5 3 2
102 7 5 3 2
101
20
101
Cies
7 5 3 2
10–1
3
4
5
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 7 5 3 2
7 5 3 2
2
CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103
100
1
0
EMITTER-COLLECTOR VOLTAGE VEC (V)
102 7 5 3 2
Tj = 25°C Tj = 125°C
GATE-EMITTER VOLTAGE VGE (V)
Coes Cres
7 5 3 2
VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TIME (ns)
COLLECTOR CURRENT IC (A)
200
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
OUTPUT CHARACTERISTICS (TYPICAL)
td(off) tf
102 7 5 3 2
td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load
101 7 5 3 2
100 1 10
2
3
5 7 102
2
3
5 7 103
COLLECTOR CURRENT IC (A)
Jun. 2004
MITSUBISHI IGBT MODULES
CM100TL-24NF
7 5 3 2
7 5
Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load
3 2
101 1 10
101 7
SWITCHING LOSS (mJ/pulse)
Irr trr
102
2
3
5 7 102
2
3
5 7 103
10–1
7 5 3 2
7 5 3 2
IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.20°C/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.28°C/W 10–3
10–2 7 5 3 2
10–3 10–5 2 3 5 710–4 2 3 5 7 10–3
SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL)
SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 102
Esw(off)
Esw(on)
2
100
Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load C snubber at bus
7 5 3 2
2
3
Conditions: VCC = 600V 5 VGE = ±15V 3 IC = 100A Tj = 125°C 2 Inductive load C snubber at bus 101 7
5 7 102
2
3
Esw(on)
Esw(off)
7 5 3 2
100 0 10
5 7 103
2
3
5 7 101
2
3
5 7 102
COLLECTOR CURRENT IC (A)
GATE RESISTANCE RG (Ω)
RECOVERY LOSS vs. IE (TYPICAL)
RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL)
102
102
7 Conditions:
VCC = 600V VGE = ±15V 3 RG = 3.1Ω Tj = 125°C 2 Inductive load C snubber at bus 101 5
7
Err
5 3 2
2
3
Conditions: VCC = 600V VGE = ±15V IE = 100A Tj = 125°C Inductive load C snubber at bus
7
RECOVERY LOSS (mJ/pulse)
RECOVERY LOSS (mJ/pulse)
2
10–1
TIME (s)
3
100 1 10
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25°C 3 Under the chip
EMITTER CURRENT IE (A)
5
10–1 1 10
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103
SWITCHING LOSS (mJ/pulse)
REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)
HIGH POWER SWITCHING USE
5 7 102
2
3
5 7 103
EMITTER CURRENT IE (A)
5 3 2
101 7
Err
5 3 2
100 0 10
2
3
5 7 101
2
3
5 7 102
GATE RESISTANCE RG (Ω)
Jun. 2004
MITSUBISHI IGBT MODULES
CM100TL-24NF HIGH POWER SWITCHING USE
GATE CHARGE CHARACTERISTICS (TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20 IC = 100A VCC = 400V 16 VCC = 600V 12
8
4
0
0
200
400
600
800
GATE CHARGE QG (nC)
Jun. 2004
