Transcript
SECURITY CODE Prepared by Checked by Approved by DATE
SPEC.NAME
Customer’s Std. Spec.
MITSUBISHI ELECTRIC R S.Iura H,Yamaguchi E M,Yamamoto V July,4,2003
CORPORATION
HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION 1.
Type number
3.3kV / 1.2kA with high isolation package
2.
Structure
Flat base type (Insulated package, AlSiC base plate)
3.
Application & Customer
High power converters and inverters
4.
Outline
190 × 140 × 48 (L. W. H)
5.
Related specifications
6. 6.1 6.2
Maximum ratings Item Collector-emitter voltage Gate-emitter voltage
6.3
Collector current
6.4
Emitter current
6.5
Symbol
VCES VGES IC ICM IE (note2) IEM(note2)
Conditions VGE=0V, Tj=25ºC VCE=0V, Tj=25ºC TC=25ºC Pulse (note1) TC=25ºC Pulse (note1)
Ratings 3300 ±20 1200 2400 1200 2400
Unit V V A A A A
Maximum collector dissipation
PC (note3)
TC=25ºC, IGBT part
12500
W
6.6
Isolation voltage
Viso
10200
V
6.7 6.8 6.9
Junction temperature Storage temperature Operating temperature
Tj Tstg Top
−40 ~ +150 −40 ~ +125 −40 ~ +125
ºC ºC ºC
Charged part to base plate, rms sinusoidal, AC60Hz 1min. ― ― ―
6.10 Turn-off switching safe operating area (RBSOA/SWSOA)
Test conditions: VCC=2200V,IC=2400A, Tj=125ºC,VGE1=−VGE2=15V, RG=1.6Ω Half bridge switching operation [See Fig.1(b)]
6.11 Short-circuit safe operating area (SCSOA)
Test conditions: VCC=2200V, Tj=125ºC, VGE1=−VGE2=15V, RG(on)=1.6Ω, RG(off)=10Ω [See Fig.1(c)] (note4) Pulse width: tW=10µs
6.12 Reverse recovery safe operating area (RRSOA)
Test conditions: VCC=2200V, IC=1600A, die/dt=−3600A/µs, Tj=125ºC, LS=100nH(=LS2) Half bridge switching operation [See Fig.1(b)]
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Tjmax rating (125°C) Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Note 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). Note 4. RG(off) can be reduced to 1.6Ω by suppressing VCE less than VCES (3300V) with soft switching that means −di/dt(off) decreasing control.
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7.
Electrical characteristics Item
Symbol
7.1
Collector cutoff current
ICES
7.2 7.3 7.4
VGE(th) IGES
7.5 7.6 7.7
Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance
7.8
Total gate charge
QG
7.9 7.10 7.11 7.12 7.13
Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage (FWDi forward voltage)
td(on) tr td(off) tf VEC
VCE(sat) Cies Coes Cres
trr (note3)
7.15 Reverse recovery charge
Qrr
7.16 7.17 7.18 7.19 7.20 7.21 7.22 7.23
Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Turn-on switching energy Turn-off switching energy
7.24 Reverse recovery energy (FWDi switching energy)
(note3)
td(on) tr td(off) tf trr (note3) Qrr(note3) Eon Eoff Erec (note3)
Limits Min.
Typ.
Max.
VCE=VCES Tj=25ºC VGE=0V Tj=125ºC IC=120mA,VCE=10V,Tj=25ºC VGE=VGES, VCE=0V,Tj=25ºC IC=1200A Tj=25ºC VGE=15V (note5) Tj=125ºC f=100kHz VCE=10V VGE=0V f=100kHz Tj=25ºC f=1MHz VCC=1650V,IC=1200A,Tj=25ºC VGE=15V
― ― 4.5 ― ― ― ― ― ―
― 24 6.0 ― 3.30 3.60 180 18.0 5.4
15 60 7.5 0.5 4.29 ― ― ― ―
―
8.6
―
Resistive load switching operation [See Fig.1(a),Fig.2] VCC=1650V,IC=1200A,Tj=25ºC VGE1=−VGE2=15V,RG=1.6Ω Tj=25ºC Tj=125ºC Tj=25ºC
― ― ― ― ― ― ―
― ― ― ― 2.80 2.70 ―
1.60 2.00 2.50 1.00 3.64 ― 1.40
Tj=125ºC
―
―
1.40
Tj=25ºC
―
400
―
Tj=125ºC
― ― ― ― ― ― ― ― ―
800 ― ― ― ― ― 800 1.60 1.55
― 1.60 1.00 2.50 1.00 1.40 ― ― ―
―
0.90
―
IE=1200A VGE=0V (note5) VCC=1650V IE=1200A die/dt=−2400A/µs, VGE3=−15V [See Fig.3]
(note3)
7.14 Reverse recovery time
Conditions
Half bridge switching operation [See Fig.1(b),Fig.2,Fig.3] VCC=1650V,Tj=125ºC IGBT(N): IGBT operation IC=1200A,VGE1=−VGE2=15V, RG=1.6Ω IGBT(P): FWDi operation IE=1200A,VGE3=−15V, RG=1.6Ω
Unit
Note 5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
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mA V µA V nF µC
µs
V µs µC
µs
µC J/P
8.
Thermal characteristics Item
Symbol
Conditions Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (note6)
8.1 8.2
Thermal resistance Thermal resistance
Rth(j-c)Q Rth(j-c)R
8.3
Contact thermal resistance
Rth(c-f)
Limits Min.
Typ.
Max.
― ―
― ―
0.010 0.020
―
0.006
―
Unit
K/W
Note 6. Typical value is measured by using Shin-etsu Silicone “G-747” with a thickness of 100µm. 9.
Mechanical characteristics Item
9.1 9.2 9.3 9.4
Mounting torque Mounting torque Mounting torque Mass
Symbol
Conditions
― ― ― ―
Main terminal screw : M8 Mounting screw : M6 Auxiliary terminal screw : M4 ―
Limits Min.
Typ.
Max.
6.67 2.84 0.88 ―
7.45 3.14 0.98 1.5
13.0 6.00 2.00 ―
Unit N·m
10. Shipping inspection report item (note7) ICES[7.1], VGE(th)[7.2], IGES[7.3], VCE(sat)[7.4 @Tj=25ºC], VEC[7.13 @Tj=25ºC], td(on)[7.16], tr[7.17] , ton[Fig.2], td(off)[7.18], tf[7.19], toff[Fig.2], ICP[6.11] (note8)
Note 7. One shipping inspection report with the above item values is submitted when modules are delivered. The conditions are defined in bracket. Note 8. ICP shows the maximum collector current value in short-circuit test.
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kg
LS1
IGBT(P) RG
Rload VGE3
+ CS
+
C
VCC
IGBT(N)
VGE1
Lload L S2
RG
RG
VGE1
C
IGBT(N) CS
VGE2
VGE2 C=2[mF],CS=20[µF]
C=2[mF],CS=20[µF],LS1=500[nH],LS2=100[nH]
(a) Resistive load switching test circuit
(b) Half bridge switching test & turn-off switching safe operating area (RBSOA/SWSOA) & reverse recovery safe operating area (RRSOA) test circuit
LS + CS VGE1
RG
C
VCC
IGBT(N)
VGE2 C=2[mF],CS=40[µF],LS=80[nH]
(c) Short-circuit safe operating area (SCSOA) test circuit
Fig.1
HIGH VOLTAGE IGBT MODULE SPECIFICATION
Switching test circuit
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VCC
vCE
IC
vCE
90%
90% di
VCC
di/dt
50%
10%
10%
10%
10%
dt
VGE1
90%
0 VGE2
td(on)
tf
td(off) tr
t1 ton=td(on)+tr
Eon =
t4
t3
t2 toff=td(off)+tf
∫
t2
ic•vce dt
Eoff =
t1
Fig.2
tf=(0.9iC-0.1iC)/(di/dt)
∫
t4
ic•vce dt
t3
Definitions of switching time & energy of IGBT part
die/dt vEC
VCC
IE 50% die
trr 10%
0%
0
Qrr = ― t 10%
Irr
dt
0
Fig.3
HIGH VOLTAGE IGBT MODULE SPECIFICATION
Erec= ―
0.5Irr t5
∫
t6
∫
t6
0
ie dt
ie•vec dt
t5
t6
Definitions of switching time, charge & energy of FWDi part
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