Transcript
< IGBT MODULES >
CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE
Collector current I C .............….......................…
150A
Collector-emitter voltage V CES ......................… 1 2 0 0 V Maximum junction temperature T j m a x ..............
1 7 5 °C
●Flat base Type ●Copper base plate (non-plating) ●Tin plating pin terminals ●RoHS Directive compliant Dual switch (Half-Bridge)
●Recognized under UL1557, File E323585
APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION
TERMINAL
Dimension in mm
INTERNAL CONNECTION
SECTION A 39
38
Terminal code
Tr2
47
24
Di1
Di2 48
23
Tr1
NTC
Th t=0.8
1
2
15
Publication Date : December 2013
1
16
22
1 2 15 16 22 23 24 38 39 47 48
TH1 TH2 G1 Es1 Cs1 C2E1 C2E1 G2 Es2 E2 C1
Tolerance otherwise specified Division of Dimension 3
Tolerance
0.5
to
±0.2
over
3
to
6
±0.3
over
6
to
30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
The tolerance of size between terminals is assumed to be ±0.4.
< IGBT MODULES >
CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Symbol
Item
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC Ptot (Note1)
IERM
(Note1)
Unit
1200
V
C-E short-circuited
± 20
V
(Note2, 4)
150
(Note3)
300
Pulse, Repetitive
Total power dissipation
IE
Conditions
DC, TC=120 °C
Collector current
ICRM
Rating
G-E short-circuited
TC=25 °C DC
Emitter current
(Note2, 4)
A
1150
(Note2)
W
150
Pulse, Repetitive
(Note3)
A
300
MODULE Rating
Unit
Visol
Symbol Isolation voltage
Item
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Conditions
2500
V
Tjmax
Maximum junction temperature
Instantaneous event (overload)
175
TCmax
Maximum case temperature
(Note4)
125
Tjop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
Tstg
Storage temperature
-
-40 ~ +125
°C °C
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1.0
mA
IGES
Gate-emitter leakage current
VGE=VGES, C-E short-circuited
-
-
0.5
μA
VGE(th)
Gate-emitter threshold voltage
IC=15 mA, VCE=10 V
5.4
6.0
6.6
V
T j =25 °C
-
1.80
2.25
Refer to the figure of test circuit
T j =125 °C
-
2.00
-
(Note5)
T j =150 °C
-
2.05
-
IC=150 A, VGE=15 V,
VCEsat (Terminal)
Collector-emitter saturation voltage VCEsat (Chip)
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
VEC
T j =25 °C
-
1.70
2.15
VGE=15 V,
T j =125 °C
-
1.90
-
(Note5)
T j =150 °C
-
1.95
-
-
-
15
-
-
3.0
-
-
0.25
-
350
-
-
-
800
-
-
200
-
-
600
VCE=10 V, G-E short-circuited VCC=600 V, IC=150 A, VGE=15 V VCC=600 V, IC=150 A, VGE=±15 V, RG=0 Ω, Inductive load
-
-
300
T j =25 °C
-
1.80
2.25
Refer to the figure of test circuit
T j =125 °C
-
1.80
-
(Note5)
T j =150 °C
-
1.80
-
IE=150 A, G-E short-circuited,
(Note1)
(Terminal)
Emitter-collector voltage VEC
IC=150 A,
(Note1)
(Chip)
IE=150 A,
T j =25 °C
-
1.70
2.15
G-E short-circuited,
T j =125 °C
-
1.70
-
(Note5)
T j =150 °C
-
1.70
-
V
V
nF nC
ns
V
V
trr
(Note1)
Reverse recovery time
VCC=600 V, IE=150 A, VGE=±15 V,
-
-
300
ns
Qrr
(Note1)
Reverse recovery charge
RG=0 Ω, Inductive load
-
8.0
-
μC
Eon
Turn-on switching energy per pulse
VCC=600 V, IC=IE=150 A,
-
24.2
-
Eoff
Turn-off switching energy per pulse
VGE=±15 V, RG=0 Ω, T j =150 °C,
-
16
-
Reverse recovery energy per pulse
Inductive load
-
12.2
-
mJ
-
-
1.4
mΩ
-
13
-
Ω
Err
(Note1)
R CC'+EE'
Internal lead resistance
rg
Internal gate resistance
Main terminals-chip, per switch, TC=25 °C
(Note4)
Per switch
Publication Date : December 2013
2
mJ
< IGBT MODULES >
CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified) NTC THERMISTOR PART Symbol
Item
Limits
Conditions (Note4)
R25
Zero-power resistance
TC=25 °C
∆R/R
Deviation of resistance
R100=493 Ω, TC=100 °C
B(25/50)
B-constant
Approximate by equation
P25
Power dissipation
TC=25 °C
Typ.
4.85
5.00
5.15
kΩ
-7.3
-
+7.8
%
-
3375
-
K
-
-
10
mW
(Note4) (Note6)
(Note4)
Max.
Unit
Min.
THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q
Item
Junction to case, per Inverter IGBT
Thermal resistance
Rth(j-c)D Rth(c-s)
Limits
Conditions
Min.
Typ.
Max.
-
-
0.13
-
-
0.23
-
15
-
(Note4) (Note4)
Junction to case, per Inverter DIODE Case to heat sink, per 1 module,
Contact thermal resistance
Thermal grease applied
(Note4, 7)
Unit K/W K/kW
MECHANICAL CHARACTERISTICS Symbol Mt
Item Mounting torque
Flatness of base plate
4.5
N·m
2.5
3.0
3.5
N·m
-
350
-
g
Terminal to terminal
11.26
-
-
Terminal to base plate
12.46
-
-
10
-
-
10.12
-
-
±0
-
+100
Mounting to heat sink -
ec
4.0
M 5 screw
Mounting torque
Clearance
Max.
3.5
mass
da
Typ.
M 6 screw
m
Creepage distance
Terminal to terminal Terminal to base plate On the centerline X, Y
(Note8)
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE) 2. Junction temperature (T j ) should not increase beyond T j m a x rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. R 1 1 ), 6. B ( 25 / 50) ln( 25 ) /( R 50 T25 T50
-:Concave
+:Convex
R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K] 7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X mounting side mounting side
mounting side
Unit
Min.
Main terminals
Ms
ds
Limits
Conditions
-:Concave
+:Convex
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "φ2.6×10 or φ2.6×12 B1 tapping screw" The length of the screw depends on thickness (t1.6~t2.0) of the PCB.
Publication Date : December 2013
3
mm mm μm
< IGBT MODULES >
CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS Symbol
Item
Conditions
VCC
(DC) Supply voltage
Applied across C1-E2 terminals
VGEon
Gate (-emitter drive) voltage
Applied across G1-Es1/G2-Es2 terminals
RG
External gate resistance
Per switch
CHIP LOCATION (Top view)
Limits Min.
Typ.
Max.
Unit
-
600
850
13.5
15.0
16.5
V V
0
-
30
Ω
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor
Publication Date : December 2013
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< IGBT MODULES >
CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE
iE
48
vGE
22
iE
0
Load VCC
iC
～ ～
+
23,24
RG
90 %
38
vGE
-VGE
0.5×I r r
10%
0A
39
tr
td(on)
47
tf
td(off)
t
Switching characteristics test circuit and waveforms
t r r , Q r r characteristics test waveform iE
iC
iC VCC
0.1×ICM
0
ICM VCC
0.1×VCC
t Irr
iC
ICM
trr
0A
vCE
0
vCE
Q r r =0.5×I r r ×t r r
t
IE 16
+VGE
90 %
0V
15
-VGE
～ ～
TEST CIRCUIT AND WAVEFORMS
0.1×VCC
0
t
IEM vEC
vCE
0.02×ICM
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
VCC
0A
t
0V
t
ti
DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) TEST CIRCUIT 48
48
Shortcircuited
22
VGE=15V
V
Shortcircuited
15
IC
15
V
VGE=15V
47
Tr1
IE
Shortcircuited
Shortcircuited
IE 38
47
39
Tr2
23,24
23,24
47
Di1
V CE s a t characteristics test circuit
V
16
38
39
22
15
16
Shortcircuited
IC
38
38
39
V
23,24
23,24
Shortcircuited
22
15
16
16
48
48
22
47
39
Di2
VEC characteristics test circuit
Publication Date : December 2013
5
< IGBT MODULES >
CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
T j =25 °C
VGE=15 V
(Chip)
300
VGE=20 V 250
13.5 V 12 V
3
T j =150 °C
(V)
15 V
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat
(A) IC COLLECTOR CURRENT
(Chip)
3.5
200
11 V 150
10 V 100
9V
50
0
T j =125 °C
2.5
2
1.5
T j =25 °C
1
0.5
0 0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
10
VCE
0
50
(V)
150
200
IC
250
300
(A)
FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
T j =25 °C
100
COLLECTOR CURRENT
G-E short-circuited
(Chip)
10
(Chip)
1000
7
IC=150 A
IC=60 A
IE
IC=300 A (A)
T j =125 °C
8
EMITTER CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat
(V)
9
6 5 4 3 2
T j =150 °C
100
T j =25 °C 1 0
10 6
8
10
12
14
GATE-EMITTER VOLTAGE
16
VGE
18
20
0
(V)
1
2
EMITTER-COLLECTOR VOLTAGE
Publication Date : December 2013
6
3
VEC
(V)
< IGBT MODULES >
CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C
VCC=600 V, IC=150 A, VGE=±15 V, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C
1000
1000
td(off)
td(off)
td(on) tr
(ns) tf
SWITCHING TIME
SWITCHING TIME
(ns)
td(on)
100
tr
10
tf
100
10 10
100
1000
COLLECTOR CURRENT
IC
1
(A)
10
100
EXTERNAL GATE RESISTANCE
RG
(Ω)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, IC/IE=150 A, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100
100
SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ)
Eon
Eon Eoff Err
10
1
Eoff 10
Err
1 10
100
1000
0.1
COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A)
1
10
EXTERNAL GATE RESISTANCE
Publication Date : December 2013
7
100
RG
(Ω)
< IGBT MODULES >
CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART CAPACITANCE CHARACTERISTICS (TYPICAL)
FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
G-E short-circuited, T j =25 °C
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C
100
1000
Cies 10
1
t r r (ns), I r r (A)
CAPACITANCE
(nF)
trr
Coes
Cres
0.1
0.01
10 0.1
1
10
COLLECTOR-EMITTER VOLTAGE
100
VCE
10
(V)
1000
IE
(A)
GATE CHARGE CHARACTERISTICS (TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM)
VCC=600 V, IC=150 A, Tj=25 °C
Single pulse, TC=25 °C R t h ( j - c ) Q =0.13 K/W, R t h ( j - c ) D =0.23 K/W 1
NORMALIZED TRANSIENT THERMAL RESISTANCE Zth(j-c)
15
VGE
(V)
100
EMITTER CURRENT
20
GATE-EMITTER VOLTAGE
Irr
100
10
5
0 0
100
200
GATE CHARGE
300
QG
400
500
(nC)
0.1
0.01
0.001 0.00001
0.0001
0.001
0.01
TIME
Publication Date : December 2013
8
(S)
0.1
1
10
< IGBT MODULES >
CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES NTC thermistor part TEMPERATURE CHARACTERISTICS (TYPICAL)
10
RESISTANCE
R
(kΩ)
100
1
0.1 -50
-25
0
25
TEMPERATURE
50
T
75
100
125
(°C)
Publication Date : December 2013
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< IGBT MODULES >
CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE
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Publication Date : December 2013
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