Transcript
MITSUBISHI IGBT MODULES
CM150TU-12H HIGH POWER SWITCHING USE INSULATED TYPE
A B F G E
H
E
G E
H
R(4 - Mounting Holes) S K
L GuP EuP
D
GvP EvP
GwP EwP
C
GuN EuN
TC Measured Point v
u
TC Measured M Point GwN EwN
GvN EvN
w
N 5 - M5 NUTS
E
H
E
H
K
E
J
J
TAB#110 t=0.5
P Q
P
GuP
GvP
GwP
EuP
EvP
EwP
U
V
W
GuN
GvN
GwN
EuN
EvN
EwN
Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking
N
Outline Drawing and Circuit Diagram Dimensions
Inches
A
4.21
B
3.54±0.01
Millimeters
Dimensions
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Inches
Millimeters
107.0
K
0.15
3.75
90.0±0.25
L
0.67
17.0
102.0
M
1.91
48.5
80.0±0.25
N
0.03
0.8
C
4.02
D
3.15±0.01
E
0.43
11.0
P
0.32
8.1
F
0.91
23.0
Q
1.02
26.0
G
0.47
12.0
R
0.22 Dia.
H
0.85
21.7
S
0.57
J
0.91
23.0
Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150TU-12H is a 600V (VCES), 150 Ampere SixIGBT Module.
5.5 Dia.
Type
Current Rating Amperes
VCES Volts (x 50)
14.4
CM
150
12
Sep.1998
MITSUBISHI IGBT MODULES
CM150TU-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature
Symbol
CM150TU-12H
Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
150
Amperes
ICM
300*
Amperes
IE
150
Amperes
Peak Emitter Current**
IEM
300*
Amperes
Maximum Collector Dissipation (Tj < 150°C)
Pc
600
Watts
Storage Temperature
Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current**
Mounting Torque, M5 Main Terminal
–
2.5~3.5
N·m
Mounting Torque, M5 Mounting
–
2.5~3.5
N·m
–
680
Grams
Viso
2500
Vrms
Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
1
mA
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 150A, VGE = 15V, Tj = 25°C
–
2.4
3.0
Volts
IC = 150A, VGE = 15V, Tj = 125°C
–
2.6
–
Volts
Total Gate Charge
QG
VCC = 300V, IC = 150A, VGE = 15V
–
300
–
nC
Emitter-Collector Voltage*
VEC
IE = 150A, VGE = 0V
–
–
2.6
Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
tr
Switch
Turn-off Delay Time
Times
Fall Time
Test Conditions
Max.
Units
–
–
13.2
nF
–
–
7.2
nF
–
–
2
nF
VCC = 300V, IC = 150A,
–
–
100
ns
VGE1 = VGE2 = 15V,
–
–
350
ns
VCE = 10V, VGE = 0V
Min.
Typ.
td(off)
RG = 4.2Ω, Resistive
–
–
300
ns
tf
Load Switching Operation
–
–
300
ns
Diode Reverse Recovery Time
trr
IE = 150A, diE/dt = -300A/µs
–
–
160
µC
Diode Reverse Recovery Charge
Qrr
IE = 150A, diE/dt = -300A/µs
–
0.36
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/6 Module
–
Thermal Resistance, Junction to Case
Rth(j-c)D
Per Free-Wheel Diode 1/6 Module
–
Rth(c-f)
Per Module, Thermal Grease Applied
–
Contact Thermal Resistance
Typ.
Max.
Units
0.21
°C/W
–
0.47
°C/W
0.015
–
°C/W
–
Sep.1998
MITSUBISHI IGBT MODULES
CM150TU-12H HIGH POWER SWITCHING USE INSULATED TYPE
OUTPUT CHARACTERISTICS (TYPICAL)
300 13
14
VGE= 20V
240
12
180 11
120 10
60
9
5 VCE = 10V Tj = 25°C Tj = 125°C
240
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
15
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
180
120 60
8
0
0 0
2
4
6
8
3 2 1
4
8
12
16
0
20
60
120
180
240
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
103
102
IC = 300A
6 IC = 150A
4 2
CAPACITANCE, Cies, Coes, Cres, (nF)
8
102
101
Cies
Coes
100
Cres
IC = 60A
100 0.6
0 4
8
12
16
20
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
1.8
2.2
2.6
REVERSE RECOVERY TIME, trr, (ns)
td(off) td(on) tr VCC = 300V VGE = ±15V RG = 4.2 Ω Tj = 125°C
101 COLLECTOR CURRENT, IC, (AMPERES)
102
102
101
Irr
101 101
102 EMITTER CURRENT, IE, (AMPERES)
101
102
GATE CHARGE, VGE
102
trr
100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
di/dt = -300A/µsec Tj = 25°C
tf
103
10-1 10-1
3.0
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
103
104
101 100
1.4
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
102
1.0
100 103
20 GATE-EMITTER VOLTAGE, VGE, (VOLTS)
0
300
VGE = 0V
Tj = 25°C
Tj = 25°C EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
10
SWITCHING TIME, (ns)
VGE = 15V Tj = 25°C Tj = 125°C
0 0
10
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
300
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
IC = 150A
16
VCC = 200V VCC = 300V
12 8 4
0 0
100
200
300
400
GATE CHARGE, QG, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM150TU-12H
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
10-3 101
100
10-2
10-1
100
101
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.21°C/W
10-1
10-1
10-2
10-2
10-3 10-5 TIME, (s)
10-4
10-3 10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
HIGH POWER SWITCHING USE INSULATED TYPE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3 101
100
10-2
10-1
100
101
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.47°C/W
10-1
10-1
10-2
10-2
10-3 10-5
10-4
10-3 10-3
TIME, (s)
Sep.1998
