Transcript
MITSUBISHI IGBT MODULES
CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE
A S - DIA. (2 TYP.)
C K
H
H
N
GUP EUP
GVP EVP
GWP EWP
U
V
W
P D
J
E
L
N GUN
GVN EVN
EUN
R
Q
R
GWN EWN
Q
R
P
B TAB #250, t = 0.8
TAB #110, t = 0.5
F
G M
R
P
GuP
GvP
EuP U
GwP
EvP V
GuN EuN
Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking
EwP W
GwN
GvN EvN
EwN
N
Outline Drawing and Circuit Diagram Dimensions
Inches
A
4.21
B
3.66±0.01
C
3.19
D
1.77
E
1.18
F
1.11
G
1.05
H J
Millimeters
Dimensions
Inches
Millimeters
107.0
K
0.79
20.0
93.0±0.2
L
0.71
18.0
81.0
M
0.69
17.5
45.0
N
0.69
17.5
30.0
P
0.63
16.0
28.2
Q
0.55
14.0
26.6
R
0.30
7.5
0.85
21.5
S
0.83
21.0
0.22 Dia.
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Dia. 5.5
Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM15TF-24H is a 1200V (VCES), 15 Ampere Six-IGBT Module. Type CM
Current Rating Amperes
VCES Volts (x 50)
15
24
Sep.1998
MITSUBISHI IGBT MODULES
CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings
Symbol
CM15TF-24H
Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C)
IC
15
Amperes
ICM
30*
Amperes
IE
15
Amperes
Peak Emitter Current**
IEM
30*
Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Pc
150
Watts
Mounting Torque, M5 Mounting
–
1.47 ~ 1.96
N·m
–
260
Grams
Viso
2500
Vrms
Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC =1. 5mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 15A, VGE = 15V
–
2.5
3.4**
Volts
IC = 15A, VGE = 15V, Tj = 150°C
–
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 15A, VGE = 15V
–
75
–
nC
Emitter-Collector Voltage
VEC
IE = 15A, VGE = 0V
–
–
3.5
Test Conditions
Min.
Typ.
Max.
–
–
3
nF
VGE = 0V, VCE = 10V
–
–
1.1
nF
0.6
nF
2.25
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Units
Reverse Transfer Capacitance
Cres
–
–
Resistive
Turn-on Delay Time
td(on)
–
–
100
ns
Load
Rise Time
Switching
Turn-off Delay Time
Times
tr
VCC = 600V, IC = 150A,
–
–
200
ns
td(off)
VGE1 = VGE2 = 15V, RG = 21Ω
–
–
150
ns
Fall Time
tf
–
–
350
ns
Diode Reverse Recovery Time
trr
IE = 15A, diE/dt = –30A/µs
–
–
250
ns
Diode Reverse Recovery Charge
Qrr
IE = 15A, diE/dt = –30A/µs
–
0.11
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance
Max.
Units
Rth(j-c)
Per IGBT
–
–
0.80
°C/W
Rth(j-c)
Per FWDi
–
–
1.40
°C/W
Rth(c-f)
Per Module, Thermal Grease Applied
–
–
0.058
°C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE
25
30 15 11
20 15
10
10 9
5
7
VCE = 10V Tj = 25°C Tj = 125°C
25 20 15 10 5
8
0
0 0
2
4
6
8
4
3
2
1
4
8
12
16
20
5
0
10
15
20
25
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
IC = 15A
4
2
IC = 6A
0
4
8
12
16
3 2 101 7 5 3 2
2.5
2.0
3.0
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
103 REVERSE RECOVERY TIME, t rr, (ns)
tf
102 td(on) VCC = 600V VGE = ±15V RG = 21Ω Tj = 125°C
tr
101 COLLECTOR CURRENT, IC, (AMPERES)
102
100 Coes
10-1 Cres
Irr
101 100
101 EMITTER CURRENT, IE, (AMPERES)
101
102
GATE CHARGE, VGE
di/dt = -30A/µsec Tj = 25°C
t rr
100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
101
102
10-2 10-1
3.5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
td(off)
101 100
1.5
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
103
Cies
VGE = 0V
100 1.0
20
CAPACITANCE, Cies, Coes, Cres, (nF)
6
30
101
100
10-1 102
20 GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 30A
102 7 Tj = 25°C 5
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
8
EMITTER CURRENT, IE, (AMPERES)
Tj = 25°C
0
SWITCHING TIME, (ns)
VGE = 15V Tj = 25°C Tj = 125°C
0 0
10
10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
12
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
30
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
IC = 15A
16
VCC = 400V
12
VCC = 600V
8
4
0 0
20
40
60
80
100
120
GATE CHARGE, QG, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM15TF-24H
10-3 101
100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100
101
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.8°C/W
10-1
10-1
10-2
10-2
10-3 10-5 TIME, (s)
10-4
10-3 10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
MEDIUM POWER SWITCHING USE INSULATED TYPE
10-3 101
100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100
101
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 1.4°C/W
10-1
10-1
10-2
10-2
10-3 10-5
10-4
10-3 10-3
TIME, (s)
Sep.1998
