Transcript
MITSUBISHI HVIGBT MODULES
Y
AR LIMIN
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
CM1600HC-34H
PRE
HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM1600HC-34H
● IC ................................................................ 1600A ● VCES ....................................................... 1700V ● Insulated Type ● 1-element in a pack ● AISiC base plate
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 114 57±0.25
4 - M8 NUTS
57±0.25
C
C
E
E
20
C
CM
E
G E
140
30
C 124±0.25
C
E
E
CIRCUIT DIAGRAM
G
C
16.5 3 - M4 NUTS
2.5
6 - φ 7 MOUNTING HOLES 5
18.5 35
61.5
11
18
LABEL
31.5
28
5
38
14.5
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
MITSUBISHI HVIGBT MODULES
Y
AR LIMIN
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
PRE
CM1600HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso
Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage
—
Mounting torque
—
Mass
Conditions VGE = 0V VCE = 0V DC, TC = 80°C Pulse
Ratings 1700 ±20 1600 3200 1600 3200 12500 –40 ~ +150 –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.0
(Note 1)
Pulse TC = 25°C, IGBT part
(Note 1)
— — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value
Unit V V A A A A W °C °C V N·m N·m N·m kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4.
Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
Conditions
Limits Typ —
VCE = VCES, VGE = 0V IC = 160mA, VCE = 10V
4.5
5.5
6.5
V
VGE = VGES, VCE = 0V Tj = 25°C IC = 1600A, VGE = 15V Tj = 125°C
— — — — — — — — — — — — — — — — —
— 2.60 3.20 144 18.0 7.2 13.2 — — — — 2.60 — 300 — — 0.008
0.5 — — — — — — 1.60 2.00 2.70 0.80 — 2.70 — 0.010 0.017 —
µA
VCE = 10V VGE = 0V VCC = 850V, IC = 1600A, VGE = 15V VCC = 850V, IC = 1600A VGE1 = VGE2 = 15V RG = 1.6Ω Resistive load switching operation IE = 1600A, VGE = 0V IE = 1600A die / dt = –3800A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied
(Note 4)
Max 24
Unit
Min —
mA
V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W
Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (T j) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
