Transcript
MITSUBISHI IGBT MODULES
CM200DY-12H HIGH POWER SWITCHING USE INSULATED TYPE
A B H
E
E
H
C2E1
C1
G
K G1 E1
C
E2
E2 G2
S
S L R - M5 THD (3 TYP.) P - DIA. (2 TYP.) J
N
J
TAB#110 t=0.5
J
N
M D F
Q
G2 E2
E2
C2E1
C1
E1 G1
Outline Drawing and Circuit Diagram Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
3.70
94.0
K
0.51
13.0
B
3.150±0.01
80.0±0.25
L
0.47
12.0
C
1.89
48.0
M
0.30
7.5
D
1.18 Max.
30.0 Max.
N
0.28
7.0
E
0.90
23.0
P
0.256 Dia.
Dia. 6.5
F
0.83
21.2
Q
0.31
8.0
G
0.71
18.0
R
M5 Metric
M5
H
0.67
17.0
S
0.16
4.0
J
0.63
16.0
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DY-12H is a 600V (VCES), 200 Ampere Dual IGBT Module. Type
Current Rating Amperes
VCES Volts (x 50)
CM
200
12
Sep.2000
MITSUBISHI IGBT MODULES
CM200DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Symbol
Ratings
Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
200
Amperes
ICM
400*
Amperes
Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C)
IE
200
Amperes
Peak Emitter Current**
IEM
400*
Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Pc
780
Watts
Mounting Torque, M5 Main Terminal
–
1.47 ~ 1.96
N·m
Mounting Torque, M6 Mounting
–
1.96 ~ 2.94
N·m
Weight
–
270
Grams
Viso
2500
Vrms
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
–
–
1.0
mA
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 20mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
Gate Leakage Current
IC = 200A, VGE = 15V
–
2.1
2.8**
Volts
IC = 200A, VGE = 15V, Tj = 150°C
–
2.15
–
Volts
Total Gate Charge
QG
VCC = 300V, IC = 200A, VGE = 15V
–
600
–
nC
Emitter-Collector Voltage
VEC
IE = 200A, VGE = 0V
–
–
2.8
Volts
Min.
Typ.
Max.
Units
–
–
20
nF
–
–
7
nF
–
–
4
nF
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Test Conditions
VGE = 0V, VCE = 10V
–
–
200
ns
tr
VCC = 300V, IC = 200A,
–
–
550
ns
td(off)
VGE1 = VGE2 = 15V, RG = 3.1Ω
–
–
300
ns
–
–
300
ns
tf
Diode Reverse Recovery Time
trr
IE = 200A, diE/dt = –400A/µs
–
–
110
ns
Diode Reverse Recovery Charge
Qrr
IE = 200A, diE/dt = –400A/µs
–
0.54
–
µC
Test Conditions
Min.
Typ.
Max.
Units
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
–
0.16
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
–
0.35
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
–
0.065
°C/W
Sep.2000
MITSUBISHI IGBT MODULES
CM200DY-12H HIGH POWER SWITCHING USE INSULATED TYPE
400 VGE = 20V 15
300 11
200 10
100
9 7
VCE = 10V Tj = 25°C Tj = 125°C
300
200
100
8
0
0 0
2
4
6
8
VGE = 15V Tj = 25°C Tj = 125°C
4
3
2
1
0 0
10
4
8
12
16
20
0
100
200
300
400
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
103
10
102
Tj = 25°C
8
IC = 400A
6
IC = 200A
4
2
CAPACITANCE, Cies, Coes, Cres, (nF)
Tj = 25°C EMITTER CURRENT, IE, (AMPERES)
102
Cies
101 Coes
100
VGE = 0V
IC = 80A
Cres
101
0 4
8
12
16
0
20
0.8
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
103 REVERSE RECOVERY TIME, t rr, (ns)
td(off) tf td(on)
102
101 101
VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C
102 COLLECTOR CURRENT, IC, (AMPERES)
2.4
3.2
4.0
100
103
–di/dt = 400A/µs
7 5
3
3
2
2
lrr
102
101
7 5
7 5
trr
3
3
2
2
101 1 10
2
3
5 7 102
100
2
3
5 7 103
EMITTER CURRENT, IE, (AMPERES)
102
GATE CHARGE, VGE
102
7 Tj = 25°C 5
101
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
103
tr
1.6
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20 GATE-EMITTER VOLTAGE, VGE, (VOLTS)
0
10-1 10-1
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
12 COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
Tj = 25oC
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
400
SWITCHING TIME, (ns)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
IC = 200A
16
VCC = 200V
12
VCC = 300V
8
4
0 0
200
400
600
800
1000
GATE CHARGE, QG, (nC)
Sep.2000
MITSUBISHI IGBT MODULES
CM200DY-12H
10-3 101
100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100
101
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.16°C/W
10-1
10-1
10-2
10-2
10-3 10-5 TIME, (s)
10-4
10-3 10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
HIGH POWER SWITCHING USE INSULATED TYPE
10-3 101
100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100
101
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.35°C/W
10-1
10-1
10-2
10-2
10-3 10-5
10-4
10-3 10-3
TIME, (s)
Sep.2000
