Transcript
MITSUBISHI IGBT MODULES
CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE
A B F
F
G
E2
C1
E2
C2E1
G2
P
J
D G1
E1
C
P
K R
Q - M6 THD (3 TYP.)
N - DIA. (4 TYP.)
TAB#110 t=0.5
M
L
M
E
H
M
G2 E2
C1
E2
C2E1
E1 G1
Outline Drawing and Circuit Diagram Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
4.25
108.0
J
0.59
15.0
B
3.66±0.01
93.0±0.25
K
0.55
14.0
C
2.44
62.0
L
0.30
8.5
D
1.89±0.01
48.0±0.25
M
0.28
7.0
E
1.22 Max.
31.0 Max.
N
0.256 Dia.
Dia. 6.5
F
0.98
25.0
P
0.24
6.0
G
0.85
21.5
Q
M6 Metric
M6
H
0.60
15.2
R
0.20
5.0
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DY-24H is a 1200V (VCES), 200 Ampere Dual IGBT Module. Type
Current Rating Amperes
VCES Volts (x 50)
CM
200
24
Sep.2000
MITSUBISHI IGBT MODULES
CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Symbol
Ratings
Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
200
Amperes
ICM
400*
Amperes
IE
200
Amperes
Peak Emitter Current**
IEM
400*
Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Pc
1500
Watts
Mounting Torque, M6 Main Terminal
–
1.96 ~ 2.94
N·m
Mounting Torque, M6 Mounting
–
1.96 ~ 2.94
N·m
–
400
Grams
Viso
2500
Vrms
Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C)
Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
–
–
1.0
mA
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 20mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 200A, VGE = 15V
–
2.5
3.4**
Volts
IC = 200A, VGE = 15V, Tj = 150°C
–
2.25
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 200A, VGE = 15V
–
1000
–
nC
Emitter-Collector Voltage
VEC
IE = 200A, VGE = 0V
–
–
3.5
Volts
Test Conditions
Min.
Typ.
Max.
Units
–
–
40
nF
VGE = 0V, VCE = 10V
–
–
14
nF
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
–
–
8
nF
Resistive
Turn-on Delay Time
td(on)
–
–
250
ns
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
tr
VCC = 600V, IC = 200A,
–
–
400
ns
td(off)
VGE1 = VGE2 = 15V, RG = 1.6Ω
–
–
300
ns
–
–
350
ns
Diode Reverse Recovery Time
trr
tf IE = 200A, diE/dt = –400A/µs
–
–
250
ns
Diode Reverse Recovery Charge
Qrr
IE = 200A, diE/dt = –400A/µs
–
1.49
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
–
0.085
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
–
0.18
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
–
0.045
°C/W
Sep.2000
MITSUBISHI IGBT MODULES
CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE
400
320
15
5
12
VGE = 20V 11
240 10
160
9
80 7
VCE = 10V Tj = 25°C Tj = 125°C
320
240
160
80
8
0
0 0
2
4
6
8
0
10
4
8
12
16
IC = 400A
IC = 200A
4
2 IC = 80A
16
20
2
102 7 5 3
REVERSE RECOVERY TIME, t rr, (ns)
td(on)
102
VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C
102 COLLECTOR CURRENT, IC, (AMPERES)
100
Cres
1.5
2.0
2.5
3.0
10-1 10-1
3.5
100
103
Irr
102
101
di/dt = -400A/µsec Tj = 25°C
101 101
102 EMITTER CURRENT, IE, (AMPERES)
102
GATE CHARGE, VGE
102
t rr
101
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
td(off)
101 101
Coes
VGE = 0V
103
tr
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
tf
400
320
Cies
2
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
103
240
102
Tj = 25°C
3
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
160
CAPACITANCE VS. VCE (TYPICAL)
100 103
20 GATE-EMITTER VOLTAGE, VGE, (VOLTS)
12
80
COLLECTOR-CURRENT, IC, (AMPERES)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
8
7 5
101 1.0
0 4
1
0
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
Tj = 25°C
0
2
0
20
103
10
6
3
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
8
VGE = 15V Tj = 25°C Tj = 125°C
4
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
400
SWITCHING TIME, (ns)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
IC = 200A
16
VCC = 400V VCC = 600V
12
8
4
0 0
400
800
1200
1600
GATE CHARGE, QG, (nC)
Sep.2000
MITSUBISHI IGBT MODULES
CM200DY-24H
10-3 101
100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100
101
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.085°C/W
10-1
10-1
10-2
10-2
10-3 10-5 TIME, (s)
10-4
10-3 10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
HIGH POWER SWITCHING USE INSULATED TYPE
10-3 101
100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100
101
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.18°C/W
10-1
10-1
10-2
10-2
10-3 10-5
10-4
10-3 10-3
TIME, (s)
Sep.2000
