Transcript
CM300DY-12NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™ NF-Series Module 300 Amperes/600 Volts
TC MEASURED POINT (BASEPLATE) A F
F
E
E
G2
G
E2
B
J
N C2E1
E2
C1
H
E1
G
G1
K
K
L (2 PLACES)
K M NUTS (3 PLACES)
D
P
P Q
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
T THICK U WIDTH
P Q
S C
V
LABEL
R
G2
Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking
E2
C2E1
E2
C1
E1 G1
Outline Drawing and Circuit Diagram Dimensions
Inches
Millimeters
A
3.70
94.0 48.0
B C
1.89
1.14+0.004/-0.02 29.0+0.1/-0.5
Dimensions
Inches
Millimeters
L
0.26 Dia.
Dia. 6.5
M
M5 Metric
M5
N
0.79
20.0
0.63
16.0
D
3.15±0.01
80.0±0.25
P
E
0.67
17.0
Q
0.28
7.0
0.83
21.2
F
0.91
23.0
R
G
0.16
4.0
S
0.30
7.5
0.02
0.5
H
0.71
18.0
T
J
0.51
13.0
U
0.110
2.8
12.0
V
0.16
4.0
K
0.47
Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY-12NF is a 600V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type
Current Rating Amperes
VCES Volts (x 50)
CM
300
12
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-12NF Dual IGBTMOD™ NF-Series Module 300 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings
Symbol
CM300DY-12NF
Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E Short)
VCES
600
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
Collector Current*** (DC, TC' = 89°C)
IC
300
Amperes
Peak Collector Current
ICM
600*
Amperes
Emitter Current** (TC = 25°C)
IE
300
Amperes
Peak Emitter Current**
IEM
600*
Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
PC
780
Watts
Mounting Torque M5, Main Terminal
—
30
in-lb
Mounting Torque M6, Mounting
—
40
in-lb
Weight
—
310
Grams
VISO
2500
Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 30mA, VCE = 10V
5.0
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 300A, VGE = 15V, Tj = 25°C
—
1.7
2.2
Volts
IC = 300A, VGE = 15V, Tj = 125°C
—
1.7
—
Volts
Total Gate Charge
QG
VCC = 300V, IC = 300A, VGE = 15V
—
1200
—
nC
Emitter-Collector Voltage**
VEC
IE = 300A, VGE = 0V
—
—
2.6
Volts
Min.
Typ.
Max.
Units
—
—
45
nf
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Inductive
Turn-on Delay Time
td(on)
Load
Rise Time
Test Conditions
VCE = 10V, VGE = 0V
—
5.5
nf
—
1.8
nf
—
—
120
ns
tr
VCC = 300V, IC = 300A,
—
—
120
ns
td(off)
VGE1 = VGE2 = 15V, RG = 2.1Ω,
—
—
350
ns
tf
Inductive Load
—
—
300
ns
Diode Reverse Recovery Time**
trr
Switching Operation,
—
—
150
ns
Diode Reverse Recovery Charge**
Qrr
IE = 300A
—
5.5
—
µC
Switch
Turn-off Delay Time
Time
Fall Time
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi) *** Tc' measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips
2
— —
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-12NF Dual IGBTMOD™ NF-Series Module 300 Amperes/600 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Rth(j-c)Q
Per IGBT 1/2 Module, TC Reference
—
—
0.16
°C/W
—
—
0.25
°C/W
—
—
0.093
°C/W
—
0.07
—
°C/W
2.1
—
21
Ω
Point per Outline Drawing Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module, TC Reference Point per Outline Drawing
Thermal Resistance, Junction to Case
Rth(j-c)'Q
Per IGBT 1/2 Module, TC Reference Point Under Chips
Contact Thermal Resistance
Rth(c-f)
External Gate Resistance
15
500
12
400 300
11
200 10
100 8
9
0
VGE = 15V Tj = 25°C Tj = 125°C
3
2
1
0 0
2
4
6
8
10
100
0
8
IC = 600A
6
IC = 300A IC = 120A
4 2
0 200
300
400
500
6
600
8
10
12
14
16
18
COLLECTOR-CURRENT, IC, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
Tj = 25°C Tj = 125°C
2
3
4
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
tf
101 Coes
100
102 td(on)
101
tr
VCC = 300V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive Load
Cres VGE = 0V
101 1
td(off)
Cies SWITCHING TIME, (ns)
CAPACITANCE, Cies, Coes, Cres, (nF)
102
5
20
103
102
0
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
103 EMITTER CURRENT, IE, (AMPERES)
10
4
Tj = 25oC
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
13
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
VGE = 20V
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
600
Per 1/2 Module, Thermal Grease Applied
RG
10-1 10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
100 101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-12NF Dual IGBTMOD™ NF-Series Module 300 Amperes/600 Volts
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
101 103
102
16
VCC = 300V
8 4
0
400
0
800
1200
SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi)
100
10-1
VCC = 300V VGE = ±15V IC = 300A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off)
101
100 100
VCC = 200V
12
GATE CHARGE, QG, (nC)
101 GATE RESISTANCE, RG, (Ω)
4
IC = 300A
EMITTER CURRENT, IE, (AMPERES)
102
102
SWITCHING LOSS, ESW( on), ESW( off), (mJ/PULSE)
Irr trr
101 101
SWITCHING LOSS, ESW( on), ESW( off), (mJ/PULSE)
102
20 GATE-EMITTER VOLTAGE, VGE, (VOLTS)
102
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
103 VCC = 300V VGE = ±15V RG = 2.1Ω Tj = 25°C Inductive Load
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth ¥ (NORMALIZED VALUE)
REVERSE RECOVERY TIME, trr, (ns)
103
SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL)
GATE CHARGE VS. VGE
10-2
10-3
10-2
10-1
100
1600
101
10-2
10-3 10-5 TIME, (s)
10-4
VCC = 300V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive Load C Snubber at Bus
101
ESW(on) ESW(off)
100 101
102 COLLECTOR CURRENT, IC, (AMPERES)
10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.16°C/W (IGBT) Rth(j-c) = 0.25°C/W (FWDi)
102
10-3 10-3
103
